Transistors IC IC SMD Type Product specification KRF7338 Features Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage N-Channel P-Channel Unit V VDS 12 -12 Continuous Drain Current,VGS@10V , Ta = 25 ID 6.3 -3.0 Continuous Drain Current ,VGS@10V , Ta = 70 ID 5.2 -2.5 Pulsed Drain Current *1 IDM 26 Power Dissipation @Ta= 25 *3 Power Dissipation @Ta= 70 *3 -13 2.0 PD W 1.3 16 Linear Derating Factor Gate-to-Source Voltage VGS Junction and Storage Temperature Range TJ, TSTG A mV/ 12 *4 8.0 V -55 to + 150 Maximum Junction-to-Ambient *3 R JA 62.5 Junction-to-Drain Lead R JL 20 /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 Pulse width 400 s; duty cycle 2%. *3 Surface mounted on 1 in square Cu board. *4 The N-channel MOSFET can withstand 15V VGS max for up to 24 hours over the life of the device. http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 IC Transistors IC IC IC SMD SMD Type Type Product specification KRF7338 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Testconditons Symbol N-Ch 12 VGS = 0V, ID = -250 A P-Ch -12 V(BR)DSS/ ID = 1mA,Reference to 25 N-Ch 0.01 TJ ID = -1mA,Reference to 25 P-Ch -0.01 RDS(on) VGS = 3.0V, ID = 2.0A*1 VGS = -4.5V, ID = -2.9A*1 VGS = -2.7V, ID = -1.5A*1 Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge VGS(th) gfs IDSS IGSS Qg Gate-to-Source Charge Qgs Gate-to-Drain ("Miller") Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time Input Capacitance tr td(off) Ciss Coss Reverse Transfer Capacitance Crss Max V/ 0.034 N-Ch 0.060 0.150 P-Ch 0.200 N-Ch 0.6 1.5 VDS = VGS, ID = -250 A P-Ch -0.40 -1.0 VDS =6V, ID = 6.0A*1 N-Ch 9.2 VDS = -6.0V, ID = -1.5A*1 P-Ch 3.5 VDS = 9.6V, VGS = 0V N-Ch 20 VDS = -9.6V, VGS = 0V P-Ch -1.0 VDS = 9.6V, VGS = 0V, TJ = 55 N-Ch 50 VDS = -9.6V, VGS = 0V, TJ = 55 P-Ch -25 VGS = 12V N-Ch 100 VGS = 8V P-Ch 100 N-Channel ID =6.0A,VDS = 6.0V,VGS =4.5V N-Ch 8.6 P-Ch 6.6 1.9 P-Channel P-Ch 1.3 ID = -2.9A,VDS = -9.6V,VGS = -4.5V N-Ch 3.9 P-Ch 1.6 N-Channel N-Ch 6.0 VDD = 6V,ID = 1.0A,RG = 6.0 P-Ch 9.6 VGS = 4.5V N-Ch 7.6 P-Channel P-Ch 13 VDD = -28V,ID = -1.0A,RG = 6.0 N-Ch 26 VGS = -4.5V P-Ch 27 VGS = 0V,VDS = 9.0V,f = 1.0MHz N-Ch 34 P-Ch 25 N-Ch 640 P-Ch 490 N-Ch 340 P-Channel P-Ch 80 VGS = 0V,VDS = -9.0V,f = 1.0MHz N-Ch 110 P-Ch 58 [email protected] 4008-318-123 V S N-Ch N-Channel Unit V VDS = VGS, ID = 250 A tf Output Capacitance http://www.twtysemi.com Typ VGS = 0V, ID = 250 A V(BR)DSS VGS = 4.5V, ID = 6.0A*1 Static Drain-to-Source On-Resistance Min A nA nC ns pF 2 of 3 IC Transistors IC IC IC IC IC SMD SMD SMDType Type Type Product specification KRF7338 Electrical Characteristics Ta = 25 Parameter Continuous Source Current Pulsed Source Current Body Diode) ISM Body Diode) *2 VSD Reverse Recovery Time trr Reverse RecoveryCharge Qrr 400 s; duty cycle Min IS Diode Forward Voltage *1 Pulse width Testconditons Symbol Typ Max N-Ch 6.3 P-Ch -3.0 N-Ch 26 P-Ch -13 TJ = 25 , IS = 1.7A, VGS = 0V*1 N-Ch 1.3 TJ = 25 , IS = -2.9A, VGS = 0V*1 P-Ch -1.2 N-Channel N-Ch 51 76 P-Ch 37 56 N-Ch 43 64 P-Ch 20 30 TJ = 25 , IF =1.7A,di/dt = 100A/ s*1 P-Channel TJ=25 , IF=-2.9A,di/dt=-100A/ s*1 Unit A V ns nC 2%. *2 Repetitive rating; pulse width limited by max. junction temperature. http://www.twtysemi.com [email protected] 4008-318-123 3 of 3