Transistors IC IC SMD Type Product specification KRF7317 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Symbol N-Channel P-Channel Unit VDS 20 -20 V Continuous Drain Current Ta = 25 ID 6.6 -5.3 Continuous Drain Current Ta = 70 ID 5.3 -4.3 Pulsed Drain Current IDM 26 -21 IS 2.5 Continuous Source Current (Diode Conduction) Power Dissipation @Ta= 25 *2 Power Dissipation @Ta= 70 *2 -2.5 2.0 PD A W 1.3 Single Pulse Avalanche Energy EAS 100 150 mJ Avalanche Current IAR 4.1 -2.9 A Repetitive Avalanche Energy EAR Peak Diode Recovery dv/dt *1 dv/dt Gate-to-Source Voltage VGS Junction and Storage Temperature Range P-Channel ISD 4.1A, di/dt -2.9A, di/dt R 92A/ -77A/ *2 Surface mounted on FR-4 board, t http://www.twtysemi.com s, VDD s, VDD V(BR)DSS, TJ -5 12 V/ ns V -55 to + 150 62.5 JA V(BR)DSS, TJ mJ 5.0 TJ, TSTG Maximum Junction-to-Ambient *2 *1 N-Channel ISD 0.20 /W 150 150 10sec. [email protected] 4008-318-123 1 of 3 IC Transistors IC SMD Type Product specification KRF7317 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Testconditons Symbol 20 VGS = 0V, ID = -250 A P-Ch -20 V(BR)DSS/ ID = 1mA,Reference to 25 N-Ch 0.027 TJ ID = -1mA,Reference to 25 P-Ch 0.031 V(BR)DSS RDS(on) VGS = 2.7V, ID = 5.2A*1 VGS = -4.5V, ID = -2.9A*1 VGS = -2.7V, ID = -1.5A*1 Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage VGS(th) gfs IDSS IGSS Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain ("Miller") Charge Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Max V V/ 0.030 0.046 0.049 0.058 P-Ch 0.082 0.098 VDS = VGS, ID = 250 A 0.7 VDS = VGS, ID = -250 A P-Ch -0.7 V VDS =10V, ID = 6.0A*1 N-Ch 20 VDS = -10V, ID = -1.5A*1 P-Ch 5.9 S VDS = 16V, VGS = 0V N-Ch 1.0 VDS = -16V, VGS = 0V P-Ch -1.0 VDS = 16V, VGS = 0V, TJ = 55 N-Ch 5.0 VDS = -16V, VGS = 0V, TJ = 55 P-Ch -25 VGS = 12V N-Ch 100 P-Ch 100 N-Channel N-Ch 18 27 ID =6.0A,VDS = 10V,VGS =4.5V P-Ch 19 29 N-Ch 2.2 3.3 P-Channel P-Ch 4.0 6.1 ID = -2.9A,VDS = -16V,VGS = -4.5V N-Ch 6.2 9.3 P-Ch 7.7 12 N-Channel N-Ch 8.1 12 VDD = 10V,ID = 1.0A,RG = 6.0 P-Ch 15 22 RD = 10 N-Ch 17 25 P-Channel P-Ch 40 60 VDD = -10V,ID = -2.9A,RG = 6.0 N-Ch 38 57 P-Ch 42 63 N-Ch 31 47 73 RD = 3.4 P-Ch 49 N-Channel N-Ch 900 VGS = 0V,VDS = 15V,f = 1.0MHz P-Ch 780 N-Ch 430 P-Channel P-Ch 470 VGS = 0V,VDS = -15V,f = 1.0MHz N-Ch 200 P-Ch 240 [email protected] Unit 0.023 0.029 N-Ch N-Ch tf Input Capacitance http://www.twtysemi.com Typ N-Ch VGS = 4.5V, ID = 6.0A*1 Static Drain-to-Source On-Resistance Min VGS = 0V, ID = 250 A 4008-318-123 A nA nC ns pF 2 of 3 IC Transistors IC SMD Type Product specification KRF7317 Electrical Characteristics Ta = 25 Parameter Continuous Source Current Pulsed Source Current ISM Body Diode) *2 VSD Reverse Recovery Time trr Reverse RecoveryCharge Qrr 300 s; duty cycle Min IS Body Diode) Diode Forward Voltage *1 Pulse width Testconditons Symbol Typ Max N-Ch 2.5 P-Ch -2.5 N-Ch 26 P-Ch N-Ch 0.72 1.0 TJ = 25 , IS = -2.9A, VGS = 0V*3 P-Ch -0.78 -1.0 TJ = 25 , IF =1.7A,di/dt = 100A/ N-Ch 52 77 s*1 P-Ch 47 71 P-Channel TJ=25 ,IF =-2.9A,di/dt=-100A/ s*1 A -21 TJ = 25 , IS = 1.7A, VGS = 0V*3 N-Channel Unit N-Ch 58 86 P-Ch 49 73 V ns nC 2%. *2 Repetitive rating; pulse width limited by max. junction temperature. *3 N-Channel Starting TJ = 25 , L = 12mH RG = 25 , IAS = 4.1A. P-Channel Starting TJ = 25 , L = 35mH RG = 25 , IAS = -2.9A. http://www.twtysemi.com [email protected] 4008-318-123 3 of 3