FastIRFET™ IRFHM4234TRPbF HEXFET® Power MOSFET VDSS 25 RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) 4.4 8.2 ID nC 40 (@TC (Bottom) = 25°C) D 5 4 G D 6 3 S D 7 2 S D 8 1 S m 7.1 Qg (typical) Top View V A PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Features Low Charge (typical 8.2 nC) Low RDSon (<4.4 m) Low Thermal Resistance to PCB (<4.4°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial Qualification Base part number Standard Pack Form Quantity Tape and Reel 4000 Package Type IRFHM4234PbF Benefits Low Switching Losses Lower Conduction Losses Enable better Thermal Dissipation results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability PQFN 3.3mm x 3.3mm Orderable Part Number IRFHM4234TRPbF Absolute Maximum Ratings Parameter Max. Units V VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 20 ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 63 ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V 40 IDM Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current PD @TA = 25°C Power Dissipation ID @ TC = 25°C PD @TC(Bottom) = 25°C Power Dissipation A 40 270 2.8 W 28 Linear Derating Factor 0.022 W/°C TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range Notes through are on page 8 1 www.irf.com © 2013 International Rectifier August 16, 2013 IRFHM4234TRPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage BVDSS Breakdown Voltage Temp. Coefficient BVDSS/TJ RDS(on) Static Drain-to-Source On-Resistance VGS(th) VGS(th) IDSS IGSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage gfs Forward Transconductance Qg Total Gate Charge Total Gate Charge Qg Qgs1 Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Qgs2 Qgd Gate-to-Drain Charge Qgodr Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Qsw Output Charge Qoss RG Gate Resistance td(on) Turn-On Delay Time Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Avalanche Characteristics Parameter Single Pulse Avalanche Energy EAS IAR Avalanche Current Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) Diode Forward Voltage VSD trr Reverse Recovery Time Qrr Reverse Recovery Charge Min. 25 ––– ––– ––– 1.1 ––– ––– ––– ––– 60 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 21 3.5 5.6 1.6 -5.5 ––– ––– ––– ––– 17 8.2 1.6 1.6 3.1 1.9 4.7 7.7 1.8 7.8 30 8.0 5.3 1011 286 83 Max. ––– ––– 4.4 7.1 2.1 ––– 1.0 100 -100 ––– ––– 12.3 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Units Conditions V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA m VGS = 10V, ID = 30A VGS = 4.5V, ID = 30A V VDS = VGS, ID = 25µA mV/°C µA VDS = 20V, VGS = 0V nA VGS = 20V VGS = -20V S VDS = 5.0V, ID = 30A nC VGS = 10V, VDS = 13V, ID = 30A nC nC ns pF Parameter RJC (Bottom) Junction-to-Case Junction-to-Case RJC (Top) VDS = 16V, VGS = 0V VDD = 13V, VGS = 4.5V ID = 30A RG=1.8 VGS = 0V VDS = 13V ƒ = 1.0MHz Typ. ––– ––– Max. 39 30 Min. ––– Typ. ––– Max. 40 ––– ––– 270 Units Conditions A MOSFET symbol showing the integral reverse p-n junction diode. V TJ = 25°C, IS = 30A, VGS = 0V ns TJ = 25°C, IF = 30A, VDD = 13V nC di/dt = 200A/µs D G S ––– ––– ––– ––– 10 11 1.0 15 17 Thermal Resistance VDS = 13V VGS = 4.5V ID = 30A Typ. ––– Max. 4.4 Units ––– 40 °C/W RJA Junction-to-Ambient ––– 45 RJA (<10s) Junction-to-Ambient ––– 31 2 www.irf.com © 2013 International Rectifier August 16, 2013 IRFHM4234TRPbF 1000 1000 100 BOTTOM 10 60µs PULSE WIDTH 2.75V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.25V 3.0V 2.75V 100 BOTTOM 10 2.75V 60µs PULSE WIDTH Tj = 150°C Tj = 25°C 1 1 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 100 1.8 100 TJ = 150°C 10 TJ = 25°C V DS = 10V 60µs PULSE WIDTH RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics 1000 1.0 ID = 30A V GS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 1.0 2.0 3.0 4.0 5.0 6.0 7.0 -60 -40 -20 0 V GS, Gate-to-Source Voltage (V) 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 14.0 100000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd V GS, Gate-to-Source Voltage (V) ID= 30A Coss = Cds + Cgd 10000 C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Ciss Coss 1000 Crss 100 12.0 V DS= 20V 10.0 V DS= 13V V DS= 5.0V 8.0 6.0 4.0 2.0 0.0 10 1 10 100 V DS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 VGS 10V 5.0V 4.5V 4.0V 3.5V 3.25V 3.0V 2.75V www.irf.com © 2013 International Rectifier 0 5 10 15 20 25 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage August 16, 2013 IRFHM4234TRPbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 100 TJ = 150°C 10 TJ = 25°C 1 OPERATION IN THIS AREA LIMITED BY RDS(on) 100µsec 100 1msec 10 Limited by package 1 10msec 0.1 Tc = 25°C Tj = 150°C Single Pulse V GS = 0V 0.01 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1.6 1 10 100 VDS , Drain-to-Source Voltage (V) V SD, Source-to-Drain Voltage (V) Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 70 2.8 V GS(th) , Gate threshold Voltage (V) Limited by package 60 ID, Drain Current (A) DC 50 40 30 20 10 0 2.4 2.0 1.6 ID = 25µA ID = 250µA 1.2 ID = 1.0mA ID = 1.0A 0.8 25 50 75 100 125 150 -75 -50 -25 TC , Case Temperature (°C) 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 10. Drain-to-Source Breakdown Voltage Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( Z thJC ) °C/W 10 D = 0.50 1 0.20 0.10 0.05 0.02 0.01 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com © 2013 International Rectifier August 16, 2013 IRFHM4234TRPbF 160 ID = 30A EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m ) 10.0 8.0 TJ = 125°C 6.0 4.0 TJ = 25°C 2.0 ID 7.5A 17A BOTTOM 30A TOP 120 80 40 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) V GS, Gate -to -Source Voltage (V) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12. On– Resistance vs. Gate Voltage Avalanche Current (A) 1000 Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125°C and Tstart =25°C (Single Pulse) 10 1 0.1 1.0E-06 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 125°C. 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 tav (sec) Fig 14. Typical Avalanche Current vs. Pulsewidth 5 www.irf.com © 2013 International Rectifier August 16, 2013 IRFHM4234TRPbF Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A 0.01 I AS Fig 16b. Unclamped Inductive Waveforms Fig 16a. Unclamped Inductive Test Circuit Fig 17b. Switching Time Waveforms Fig 17a. Switching Time Test Circuit Id Vds Vgs VDD Vgs(th) Qgs1 Qgs2 Fig 18. Gate Charge Test Circuit 6 www.irf.com © 2013 International Rectifier Qgd Qgodr Fig 19. Gate Charge Waveform August 16, 2013 IRFHM4234TRPbF PQFN 3.3 x 3.3 Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 3.3 x 3.3 Part Marking Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 www.irf.com © 2013 International Rectifier August 16, 2013 IRFHM4234TRPbF PQFN 3.3 x 3.3 Tape and Reel Note: 1. Dimension measured on the bottomof the cavity. 2. Pitch tolerance over any 10 pitches = ±0.008 [0.2] 3. ESDRequirement: 0±200volts 4. Surface Resistivity = 10 to 10 ohms per square inch 5. Roll should contain splice-free material 6. Engrave RESY symbol every 100 sprockets (about 15.75 [400] PS ( conformsupplier specification) camber The camber shall not exceed in 1mm/250 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Qualification Information† Industrial Qualification Level (per JEDEC JESD47F†† guidelines) Moisture Sensitivity Level PQFN 3.3mm x 3.3mm MSL1 (per JEDEC J-STD-020D††) Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.087mH, RG = 50, IAS = 30A. Pulse width 400µs; duty cycle 2%. R is measured at TJ of approximately 90°C. When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf Calculated continuous current based on maximum allowable junction temperature. Current is limited to 40A by source bonding technology. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 8 www.irf.com © 2013 International Rectifier August 16, 2013 IRFHM4234TRPbF Revision History Date 9 Comments 06/21/2013 Updated figure 10 ID label from 1.0mA to 1.0A, on page 4. 08/15/2013 Added “FastIRFET™” above the part number, on page 1. www.irf.com © 2013 International Rectifier August 16, 2013