FastIRFET™ IRFH4210DPbF HEXFET® Power MOSFET VDSS 25 V RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) 1.35 Qg (typical) 37.0 nC ID (@TC (Bottom) = 25°C) 100 A 1.10 m PQFN 5X6 mm Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters Features Low RDS(ON) (<1.10 m) Schottky Intrinsic Diode with Low Forward Voltage Low Thermal Resistance to PCB (<1.0°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial Qualification Base part number Standard Pack Form Quantity Tape and Reel 4000 Package Type IRFH4210DPbF Benefits Lower Conduction Losses Lower Switching Losses Enable better thermal dissipation results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability PQFN 5mm x 6 mm Orderable Part Number IRFH4210DTRPbF Absolute Maximum Ratings Parameter Max. Units VGS Gate-to-Source Voltage ± 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 44 A ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 266 ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V 168 ID @ TC(Bottom) = 25°C 100 IDM Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current PD @TA = 25°C Power Dissipation 3.5 PD @TC(Bottom) = 25°C Power Dissipation 125 400 W Linear Derating Factor 0.028 W/°C TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range Notes through are on page 8 1 www.irf.com © 2013 International Rectifier August 16, 2013 IRFH4210DPbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient BVDSS/TJ RDS(on) Static Drain-to-Source On-Resistance VGS(th) VGS(th) IDSS IGSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage gfs Forward Transconductance Total Gate Charge Qg Qg Total Gate Charge Pre-Vth Gate-to-Source Charge Qgs1 Post-Vth Gate-to-Source Charge Qgs2 Qgd Gate-to-Drain Charge Gate Charge Overdrive Qgodr Switch Charge (Qgs2 + Qgd) Qsw Output Charge Qoss RG Gate Resistance td(on) Turn-On Delay Time Rise Time tr td(off) Turn-Off Delay Time tf Fall Time Input Capacitance Ciss Output Capacitance Coss Crss Reverse Transfer Capacitance Avalanche Characteristics Parameter Single Pulse Avalanche Energy EAS Avalanche Current IAR Diode Characteristics Parameter Continuous Source Current IS (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage Reverse Recovery Time trr Qrr Reverse Recovery Charge Min. 25 ––– ––– ––– 1.1 ––– ––– ––– ––– 392 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 19 0.85 1.10 1.6 -10 ––– ––– ––– ––– 77.0 37.0 7.6 6.4 13.2 9.8 19.6 37 1.3 19 45 24 16 4812 1459 355 Max. ––– ––– 1.10 1.35 2.1 ––– 250 100 -100 ––– ––– 55.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Units Conditions V VGS = 0V, ID = 1mA mV/°C Reference to 25°C, ID = 10mA m VGS = 10V, ID = 50A VGS = 4.5V, ID = 50A V VDS = VGS, ID = 100µA mV/°C µA VDS = 20V, VGS = 0V nA VGS = 20V VGS = -20V S VDS = 13V, ID = 50A nC VGS = 10V, VDS = 13V, ID = 50A nC nC ns pF Parameter RJC (Bottom) Junction-to-Case Junction-to-Case RJC (Top) VDS = 16V, VGS = 0V VDD = 13V, VGS = 4.5V ID = 50A RG=1.8 VGS = 0V VDS = 13V ƒ = 1.0MHz Typ. ––– ––– Max. 247 50 Min. ––– Typ. ––– Max. 100 ––– ––– 400 Units Conditions A MOSFET symbol showing the integral reverse p-n junction diode. V TJ = 25°C, IS = 50A, VGS = 0V ns TJ = 25°C, IF = 50A, VDD = 13V nC di/dt = 300A/µs D G S ––– ––– ––– ––– 27 59 0.75 41 89 Thermal Resistance VDS = 13V VGS = 4.5V ID = 50A Typ. ––– Max. 1.0 Units ––– 22 °C/W RJA Junction-to-Ambient ––– 36 RJA (<10s) Junction-to-Ambient ––– 21 2 www.irf.com © 2013 International Rectifier August 16, 2013 IRFH4210DPbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.25V 3.0V 2.75V BOTTOM 100 10 2.75V 2.75V 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 150°C Tj = 25°C 1 10 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 100 1.8 100 TJ = 150°C 10 TJ = 25°C 1 V DS = 10V 60µs PULSE WIDTH RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics 1000 ID = 50A V GS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 0.1 1.5 2.0 2.5 3.0 3.5 -60 -40 -20 0 4.0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) V GS, Gate-to-Source Voltage (V) Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 14.0 100000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd V GS, Gate-to-Source Voltage (V) ID= 50A Coss = Cds + Cgd C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10000 Ciss Coss 1000 Crss 12.0 V DS= 20V V DS= 13V 10.0 8.0 6.0 4.0 2.0 0.0 100 1 10 100 V DS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 VGS 10V 5.0V 4.5V 4.0V 3.5V 3.25V 3.0V 2.75V www.irf.com © 2013 International Rectifier 0 10 20 30 40 50 60 70 80 90 100 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage August 16, 2013 IRFH4210DPbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 TJ = 150°C 100 TJ = 25°C 10 OPERATION IN THIS AREA LIMITED BY RDS(on) 100µsec 100 Limited by package 10 10msec 1 Tc = 25°C Tj = 150°C Single Pulse V GS = 0V 0.1 1.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1.4 1 10 100 VDS, Drain-to-Source Voltage (V) V SD, Source-to-Drain Voltage (V) Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 2.5 300 V GS(th) , Gate threshold Voltage (V) Limited by package 250 ID, Drain Current (A) 1msec DC 200 150 100 50 2.0 1.5 ID = 100µA ID = 250µA 1.0 ID = 1.0mA ID = 1.0A 0.5 0.0 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 TJ , Temperature ( °C ) TC , Case Temperature (°C) Fig 10. Drain-to–Source Breakdown Voltage Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com © 2013 International Rectifier August 16, 2013 1000 4.0 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m) IRFH4210DPbF ID = 50A 3.0 2.0 TJ = 125°C 1.0 TJ = 25°C ID 13A 24A BOTTOM 50A TOP 800 600 400 200 0 0.0 2 4 6 8 10 12 14 16 18 25 20 75 100 125 150 Starting TJ , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 12. On– Resistance vs. Gate Voltage 50 Fig 13. Maximum Avalanche Energy vs. Drain Current 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125°C and Tstart =25°C (Single Pulse) Avalanche Current (A) Duty Cycle = Single Pulse 100 10 1 1.0E-06 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 125°C. 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 tav (sec) Fig 14. Typical Avalanche Current vs. Pulsewidth 5 www.irf.com © 2013 International Rectifier August 16, 2013 IRFH4210DPbF Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A 0.01 I AS Fig 16b. Unclamped Inductive Waveforms Fig 16a. Unclamped Inductive Test Circuit Fig 17b. Switching Time Waveforms Fig 17a. Switching Time Test Circuit Id Vds Vgs VDD Vgs(th) Qgs1 Qgs2 Fig 18. Gate Charge Test Circuit 6 www.irf.com © 2013 International Rectifier Qgd Qgodr Fig 19. Gate Charge Waveform August 16, 2013 IRFH4210DPbF PQFN 5x6 Outline "B" Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "B" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 www.irf.com © 2013 International Rectifier August 16, 2013 IRFH4210DPbF PQFN 5x6 Outline "B" Tape and Reel Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Qualification Information† Industrial (per JEDEC JESD47F†† guidelines) Qualification Level MSL1 (per JEDEC J-STD-020D††) PQFN 5mm x 6mm Moisture Sensitivity Level Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.20mH, RG = 50, IAS = 50A. Pulse width 400 µs; duty cycle 2%. R is measured at TJ of approximately 90 °C. When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf Calculated continuous current based on maximum allowable junction temperature. Current is limited to 100A by source bonding technology. Revision History Date 04/30/2013 05/17/2013 08/14/2013 Comments Release of final data sheet. Updated package 3D drawing, on page 1. Added Continuous Drain Current limited by source bonding technology, on page 1. Divided note 6 into note 6 & 7, on page 8. Added “FastIRFET™” above the part number, on page 1. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 8 www.irf.com © 2013 International Rectifier August 16, 2013