2SD1994A NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z TO-92 Low collector-emitter saturation voltage VCE(sat) Allowing supply with the radial taping G H 1Emitter 2Collector 3Base J A D Collector 2 REF. B A B C D E F G H J K K 3 Base E C F 1 Emitter Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector - Base Voltage VCBO 60 V Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 V IC 1 A Collector Current Total Power Dissipation Junction, Storage Temperature PC 1 W TJ, TSTG +150, -55 ~ +150 °C ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Collector - Base Breakdown Voltage Parameter V(BR)CBO 60 - - V Collector - Emitter Breakdown Voltage V(BR)CEO 50 - - V Emitter - Base Breakdown Voltage V(BR)EBO 5 - - V ICBO - - 0.1 μA μA IC = 10 μA, IE = 0 IC = 2 mA, IB = 0 IE = 10 μA, IC = 0 VCB = 20V, IE = 0 VEB = 5V, IC = 0 VCE = 10V, IC = 500 mA VCE = 5V, IC = 1 A IC = 500mA, IB = 50 mA IC = 500mA, IB = 50 mA VCE = 10V, IB = 50 mA, f = 200MHz VCB = 10V,IE = 0, f = 1MHz Collector Cut - Off Current Emitter Cut - Off Current DC Current Gain IEBO - - 0.1 hFE(1) 85 - 340 hFE(2) 50 - - Collector - Emitter Saturation Voltage VCE(sat) - - 0.4 V Base - Emitter Saturation Voltage VBE(sat) - - 1.2 V fT - 200 - MHz Cob - - 20 pF Transition Frequency Collector Output Capacitance CLASSIFICATION OF hFE(1) Rank Range http://www.SeCoSGmbH.com/ 01-December-2008 Rev. B Q R S 85 - 170 120 - 240 170 - 340 Any changes of specification will not be informed individually. Page 1 of 3 2SD1994A Elektronische Bauelemente NPN General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 01-December-2008 Rev. B Any changes of specification will not be informed individually. Page 2 of 3 2SD1994A Elektronische Bauelemente NPN General Purpose Transistor CHARACTERISTIC CURVES (cont’d) http://www.SeCoSGmbH.com/ 01-December-2008 Rev. B Any changes of specification will not be informed individually. Page 3 of 3