NTTFS3A08P Product Preview Power MOSFET −20 V, −14 A, Single P−Channel, m8FL Features • Ultra Low RDS(on) to Minimize Conduction Losses • m8FL 3.3 x 3.3 x 0.8 mm for Space Saving and Excellent Thermal Conduction • ESD Protection Level of 5 kV per JESD22−A114 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(on) MAX ID MAX 6.7 mW @ −4.5 V −20 V −14 A 9.0 mW @ −2.5 V Applications P−Channel MOSFET • Battery/Switch • High Side Load Switch • Optimized for Power Management Applications for Portable Products such as Media Tablets, Ultrabook PCs and Cellphones MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±8 V ID −14 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 2.2 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID −20 A Power Dissipation RqJA ≤ 10 s (Note 1) TA = 85°C Steady State −10 TA = 85°C TA = 25°C PD 4.5 W Continuous Drain Current RqJA (Note 2) TA = 25°C ID −9 A Power Dissipation RqJA (Note 2) TA = 25°C PD 0.84 W TA = 25°C, tp = 10 ms IDM −43 A TJ, Tstg −55 to +150 °C VESD 5000 V Source Current (Body Diode) IS −6 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Pulsed Drain Current Operating Junction and Storage Temperature ESD (HBM, JESD22−A114) D MARKING DIAGRAM 1 S S S G 1 −15 TA = 85°C G −6 WDFN8 (m8FL) CASE 511AB XXXX A Y WW G XXXX AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. ORDERING INFORMATION Device Package Shipping† NTTFS3A08PTAG WDFN8 (Pb−Free) 1500 / Tape & Reel NTTFS3A08PTWG WDFN8 (Pb−Free) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. © Semiconductor Components Industries, LLC, 2012 June, 2012 − Rev. P0 1 Publication Order Number: NTTFS3A08P/D NTTFS3A08P THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Ambient – Steady State (Note 3) Parameter RqJA 56.5 °C/W Junction−to−Ambient – Steady State (Note 4) RqJA 147.6 Junction−to−Ambient – (t ≤ 10 s) (Note 3) RqJA 27.5 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size (40 mm2, 1 oz. Cu). ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA −20 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS V TBD Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −16 V Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±5 V VGS(TH) VGS = VDS, ID = −250 mA TJ = 25°C mV/°C −1 mA ±5 mA −1.0 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS −0.4 TBD mV/°C VGS = −4.5 V ID = −12 A 4.9 6.7 VGS = −2.5 V ID = −10 A 6.9 9.0 VDS = −1.5 V, ID = −8 A mW TBD S 5000 pF CHARGES AND CAPACITANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance VGS = 0 V, f = 1.0 MHz, VDS = −10 V 600 Crss 500 Total Gate Charge QG(TOT) 54.0 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 14.0 td(on) 12 VGS = −4.5 V, VDS = −10 V, ID = −8 A nC 2.0 6.5 SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(off) VGS = −4.5 V, VDS = −10 V, ID = −8 A, RG = 6.0 W tf ns 56 250 165 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = −6 A TJ = 25°C −0.7 207 VGS = 0 V, dIS/dt = 100 A/ms, IS = −6 A QRR http://onsemi.com 2 V ns 45 162 234 5. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. −1.0 nC NTTFS3A08P PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A D1 B 2X 0.20 C 8 7 6 5 4X E1 E q c 1 2 3 4 A1 TOP VIEW 0.10 C A e SIDE VIEW 0.10 8X b C A B 0.05 C 4X L C 6X 0.10 C DETAIL A SEATING PLANE DETAIL A 8X e/2 1 0.42 4 INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 0.65 PITCH PACKAGE OUTLINE 4X 0.66 M E3 8 G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.65 0.80 0.95 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ SOLDERING FOOTPRINT* K E2 DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q 5 D2 BOTTOM VIEW 3.60 L1 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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