SSM5H06FE Silicon N Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5H06FE DC-DC Converter • Combined Nch MOSFET and Schottky Diode in one Package. • Small package Unit: mm 1.6±0.05 Gate-Source voltage VGSS ±10 V ID 100 Drain current DC IDP (Note 2) Pulse Drain power dissipation PD (Note 1) Channel temperature Tch 200 150 mW 150 °C Unit 1.Gate 2.Source 3.Anode Maximum (peak) reverse voltage Rating 5 4 3 Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY Symbol 2 mA DIODE Characteristics 1 0.12±0.05 V 0.5 Unit 20 0.5 Rating VDS 0.55±0.05 Characteristics 1.6±0.05 Symbol Drain-Source voltage 1.0±0.05 Absolute Maximum Ratings (Ta = 25°C) MOSFET 4.Cathode 5.Drain VRM 15 V Reverse voltage VR 12 V Average forward current IO 100 mA ESV ⎯ ⎯ Peak one cycle surge forward current (non-repetitive) Junction temperature IFSM 1 (50 Hz) A JEDEC Tj 125 °C JEITA TOSHIBA Absolute Maximum Ratings (Ta = 25°C) MOSFET, Storage temperature Operating temperature Note: Symbol Rating Unit Tstg −55~125 °C Topr −40~100 °C (Note 3) 2-2P1C Weight: 3 mg (typ.) DIODE COMMON Characteristics 0.2±0.05 1.2±0.05 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm × 5) 0.45 mm 0.3 mm Note 2: The pulse width limited by max channel temperature. Note 3: Operating temperature limited by max channel temperature and max junction temperature. 1 2007-11-01 SSM5H06FE Marking Equivalent Circuit 5 4 5 3 1 4 KEH 1 2 2 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area. When using this device, please take heat dissipation fully into account. 2 2007-11-01 SSM5H06FE MOSFET Electrical Characteristics (Ta = 25°C) Characteristics Symbol Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source on-resistance Test Condition Min Typ. Max Unit IGSS VGS = ±10 V, VDS = 0 ⎯ ⎯ ±1 μA V (BR) DSS ID = 0.1 mA, VGS = 0 20 ⎯ ⎯ V IDSS VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA Vth VDS = 3 V, ID = 0.1 mA 0.6 ⎯ 1.1 V ⏐Yfs⏐ VDS = 3 V, ID = 10 mA 40 ⎯ ⎯ mS ID = 10 mA, VGS = 4 V ⎯ 1.5 3.0 ID = 10 mA, VGS = 2.5 V ⎯ 2.2 4.0 ID = 1 mA, VGS = 1.5 V ⎯ 5.2 15 RDS (ON) Ω Input capacitance Ciss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 9.3 ⎯ pF Reverse transfer capacitance Crss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 4.5 ⎯ pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 9.8 ⎯ pF VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V ⎯ 70 ⎯ ⎯ 125 ⎯ Turn-on time ton Turn-off time toff Switching time ns Switching Time Test Circuit (b) VIN (a) Test circuit 2.5 V OUT 2.5 V 90% 50 Ω IN 0 10 μs 10% 0V RL VDD (c) VOUT VDD = 3 V Duty < = 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C VDD 10% 90% VDS (ON) tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when the low operating current value is ID 100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration when using the device. 3 2007-11-01 SSM5H06FE Schottky Diode Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Symbol Test Condition Min Typ. Max Unit VF (1) IF = 1mA ⎯ 0.18 ⎯ V VF (2) IF = 5mA ⎯ 0.23 0.30 V IF = 100mA ⎯ 0.35 0.50 V VF (3) Reverse current IR VR = 12 V ⎯ ⎯ 22 μA Total capacitance CT VR = 0 V, f = 1 MHz ⎯ 20 40 pF Precaution The schottky barrier diodes of this product have large-reverse-current-leakage characteristics compared to other switching diodes. This current leakage and improper operating temperature or voltage may cause thermal runaway resulting in breakdown. Take forward and reverse loss into consideration in radiation design and safety design. 4 2007-11-01 SSM5H06FE MOSFET Electrical Characteristics Graph ID – VDS ID – VGS 250 1000 Common source 2.5 4 3 10 (mA) 2.1 ID 1.9 150 Drain current Drain current ID VDS = 3 V 2.3 (mA) 200 Common source Ta = 25°C 1.7 100 1.5 50 100 Ta = 100°C 10 25°C −25°C 1 0.1 VGS = 1.3 V 0 0 0.5 1 1.5 Drain-Source voltage 0.01 0 2 1 VDS (V) 2 Gate-Source voltage RDS (ON) – ID VGS (V) RDS (ON) – VGS 12 6 Common source Common source Ta = 25°C ID = 10 mA 5 Drain-Source on-resistance RDS (ON) (Ω) Drain-Source on-resistance RDS (ON) (Ω) 10 8 VGS = 1.5 V 6 4 2.5 V 2 4 3 Ta = 100°C 2 25°C 1 −25°C 4V 0 1 10 100 0 0 1000 2 4 RDS (ON) – Ta 8 10 VGS (V) Vth – Ta 8 2 6 Vth (V) Common source VGS = 1.5 V, ID = 1 mA Gate threshold voltage Drain-Source on-resistance RDS (ON) (Ω) 6 Gate-Source voltage Drain current ID (mA) 4 2.5 V, 10 mA 2 4 V, 10 mA 0 −25 3 0 25 50 75 100 125 1.6 1.2 0.8 0.4 0 −25 150 Ambient temperature Ta (°C) Common source ID = 0.1 mA VDS = 3 V 0 25 50 75 100 125 150 Ambient temperature Ta (°C) 5 2007-11-01 SSM5H06FE MOSFET Electrical Characteristics Graph ⎪Yfs⎪ – ID IDR – VDS 250 300 Common source VDS = 3 V Ta = 25°C 100 Drain reverse current IDR (mA) Forward transfer admittance ⎪Yfs⎪ (mS) 500 50 30 10 5 3 1 1 10 100 Drain current 200 D 150 IDR G S 100 50 0 0 1000 Common source VGS = 0 V Ta = 25°C −0.2 ID (mA) −0.4 −0.6 Drain-Source voltage −1 VDS −1.2 −1.4 (V) t – ID C – VDS 100 5000 Common source VDD = 3 V VGS = 0~2.5 V Ta = 25°C 3000 50 30 (pF) Switching time t (ns) toff 10 Capacitance C −0.8 Ciss Coss 5 3 Crss Common source 1 VGS = 0 V f = 1 MHz 0.5 Ta = 25°C 0.3 0.3 0.5 0.1 1000 500 100 ton 50 30 1 3 5 Drain-Source voltage 30 50 10 100 tf 300 10 0.1 tr 1 10 100 VDS (V) Drain current ID (mA) PD – Ta Drain power dissipation PD (mW) 250 Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 t Cu Pad: 0.135 mm2 × 5) 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (°C) 6 2007-11-01 SSM5H06FE SBD Electrical Characteristics Graph 7 2007-11-01 SSM5H06FE RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. 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