UM2429 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The UM2429 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The UM2429 meet the RoHS and Green Product requirement with full function reliability approved. BVDSS RDS(ON) ID -20V 15mΩ -8.5A Applications z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch SOP8 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM Rating Units Drain-Source Voltage -20 V Gate-Source Voltage ±12 V 1 -8.5 A 1 -6.8 A -43 A Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 Thermal Resistance Junction-Case 1 1 Max. Unit --- 85 ℃/W --- 28 ℃/W UM2429 P-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V Reference to 25℃ , ID=-1mA --- -0.01 --- V/℃ VGS=-4.5V , ID=-8A --- 12 15 VGS=-2.5V , ID=-6A --- 18 22 -0.5 -0.7 -1.2 V --- 3.13 --- mV/℃ VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-8A --- 38 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 10 20 Ω Qg Total Gate Charge (-4.5V) --- 37.6 52.6 Qgs Gate-Source Charge --- 7 9.8 Qgd Gate-Drain Charge --- 7.7 10.8 Td(on) VDS=-15V , VGS=-4.5V , ID=-8A Turn-On Delay Time uA nC --- 13.8 27.6 Rise Time VDD=-10V , VGS=-4.5V , RG=3.3Ω --- 73 131 Turn-Off Delay Time ID=-8A --- 100 200 Fall Time --- 77 154 Ciss Input Capacitance --- 3710 5194 Coss Output Capacitance --- 360 504 Crss Reverse Transfer Capacitance --- 318 445 Min. Typ. Max. Unit --- --- -8.5 A --- --- -43 A Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM Parameter Conditions 1,4 Continuous Source Current 2,4 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-8A , dI/dt=100A/µs , TJ=25℃ --- --- -1 V --- 22 --- nS --- 10 --- nC Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UM2429 P-Ch 20V Fast Switching MOSFETs Typical Characteristics 40 ID=-10A 35 RDSON (mΩ) 30 25 20 15 10 1 2 3 -VGS (V) 4 5 6 Fig.2 On-Resistance vs. Gate-Source Fig.1 Typical Output Characteristics 12 -IS Source Current(A) 10 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0.0 0.2 0.4 0.6 0.8 1.0 -VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics 1.8 Normalized On Resistance 1.8 1.4 Normalized VGS(th) 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) 0 50 100 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ Fig.5 Normalized VGS(th) vs. TJ 3 150 UM2429 P-Ch 20V Fast Switching MOSFETs 10000 Capacitance (pF) Ciss 1000 Coss Crss 100 F=1.0MHz 10 1 5 9 13 17 21 -VDS , Drain to Source Voltage (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T TJpeak = TC+P DMXRθJC SINGLE 0.001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform 4 1000