UNITPOWER UM2429

UM2429
P-Ch 20V Fast Switching MOSFETs
General Description
Product Summery
The UM2429 is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The UM2429 meet the RoHS and Green Product
requirement with full function reliability approved.
BVDSS
RDS(ON)
ID
-20V
15mΩ
-8.5A
Applications
z High Frequency Point-of-Load Synchronous
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
Features
z Load Switch
SOP8 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
Rating
Units
Drain-Source Voltage
-20
V
Gate-Source Voltage
±12
V
1
-8.5
A
1
-6.8
A
-43
A
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
2
3
PD@TA=25℃
Total Power Dissipation
1.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Typ.
RθJA
Thermal Resistance Junction-ambient
RθJC
1
Thermal Resistance Junction-Case
1
1
Max.
Unit
---
85
℃/W
---
28
℃/W
UM2429
P-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
VGS=0V , ID=-250uA
-20
---
---
V
Reference to 25℃ , ID=-1mA
---
-0.01
---
V/℃
VGS=-4.5V , ID=-8A
---
12
15
VGS=-2.5V , ID=-6A
---
18
22
-0.5
-0.7
-1.2
V
---
3.13
---
mV/℃
VDS=-16V , VGS=0V , TJ=25℃
---
---
-1
VDS=-16V , VGS=0V , TJ=55℃
---
---
-5
VGS=VDS , ID =-250uA
mΩ
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±12V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-8A
---
38
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
10
20
Ω
Qg
Total Gate Charge (-4.5V)
---
37.6
52.6
Qgs
Gate-Source Charge
---
7
9.8
Qgd
Gate-Drain Charge
---
7.7
10.8
Td(on)
VDS=-15V , VGS=-4.5V , ID=-8A
Turn-On Delay Time
uA
nC
---
13.8
27.6
Rise Time
VDD=-10V , VGS=-4.5V , RG=3.3Ω
---
73
131
Turn-Off Delay Time
ID=-8A
---
100
200
Fall Time
---
77
154
Ciss
Input Capacitance
---
3710
5194
Coss
Output Capacitance
---
360
504
Crss
Reverse Transfer Capacitance
---
318
445
Min.
Typ.
Max.
Unit
---
---
-8.5
A
---
---
-43
A
Tr
Td(off)
Tf
VDS=-15V , VGS=0V , f=1MHz
ns
pF
Diode Characteristics
Symbol
IS
ISM
Parameter
Conditions
1,4
Continuous Source Current
2,4
Pulsed Source Current
2
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25℃
IF=-8A , dI/dt=100A/µs , TJ=25℃
---
---
-1
V
---
22
---
nS
---
10
---
nC
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UM2429
P-Ch 20V Fast Switching MOSFETs
Typical Characteristics
40
ID=-10A
35
RDSON (mΩ)
30
25
20
15
10
1
2
3
-VGS (V)
4
5
6
Fig.2 On-Resistance vs. Gate-Source
Fig.1 Typical Output Characteristics
12
-IS Source Current(A)
10
8
6
TJ=150℃
4
TJ=25℃
2
0
0.0
0.2
0.4
0.6
0.8
1.0
-VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
1.8
Normalized On Resistance
1.8
1.4
Normalized VGS(th)
1.4
1.0
1
0.6
0.6
0.2
0.2
-50
0
50
100
150
-50
TJ ,Junction Temperature (℃ )
0
50
100
TJ , Junction Temperature (℃)
Fig.6 Normalized RDSON vs. TJ
Fig.5 Normalized VGS(th) vs. TJ
3
150
UM2429
P-Ch 20V Fast Switching MOSFETs
10000
Capacitance (pF)
Ciss
1000
Coss
Crss
100
F=1.0MHz
10
1
5
9
13
17
21
-VDS , Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
Normalized Thermal Response (RθJA)
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.01
P DM
0.01
T ON
T
D = TON/T
TJpeak = TC+P DMXRθJC
SINGLE
0.001
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
1000