XINDEYI UG2504W

UG2504W
Dual N-Ch 20V Fast Switching MOSFETs
General Description
Product Summery
The UG2504W is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The UG2504W meet the RoHS and Green
Product requirement with full function reliability
approved.
BVDSS
RDS(ON)
ID
20V
22mΩ
5.8A
Applications
z Power management in portable and battery
operated products
z One cell battery pack protection
Features
z Load Switch
TSSOP8 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
Rating
Units
Drain-Source Voltage
20
V
Gate-Source Voltage
±8
V
1
5.8
A
1
4.6
A
24
A
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
2
3
PD@TA=25℃
Total Power Dissipation
1.1
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
RθJA
Thermal Resistance Junction-ambient
RθJC
1
Thermal Resistance Junction-Case
1
1
Typ.
Max.
Unit
---
110
℃/W
---
70
℃/W
UG2504W
Dual N-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
VGS=0V , ID=250uA
20
---
---
V
Reference to 25℃ , ID=1mA
---
0.028
---
V/℃
VGS=4.5V , ID=5A
---
17
22
VGS=2.5V , ID=4A
---
22
28
VGS=1.8V , ID=3A
mΩ
---
35
44
0.3
0.6
1
V
---
-3.21
---
mV/℃
VDS=16V , VGS=0V , TJ=25℃
---
---
1
VDS=16V , VGS=0V , TJ=55℃
---
---
5
VGS=VDS , ID =250uA
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±12V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=5A
---
28
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.5
3
Ω
Qg
Total Gate Charge (4.5V)
---
14.8
20.7
---
1.44
2.0
Qgs
Qgd
Td(on)
VDS=15V , VGS=4.5V , ID=5A
Gate-Source Charge
Gate-Drain Charge
---
2.8
3.9
Turn-On Delay Time
---
3.2
6.4
uA
nC
Rise Time
VDD=10V , VGS=10V , RG=3.3Ω
---
40
80
Turn-Off Delay Time
ID=5A
---
40.8
82
Fall Time
---
9.2
18.4
Ciss
Input Capacitance
---
952
1333
Coss
Output Capacitance
---
90
126
Crss
Reverse Transfer Capacitance
---
79
111
Min.
Typ.
Max.
---
---
5.8
A
---
---
24
A
---
---
1.2
V
---
8.9
---
nS
---
2.9
---
nC
Tr
Td(off)
Tf
VDS=15V , VGS=0V , f=1MHz
ns
pF
Diode Characteristics
Symbol
Parameter
Conditions
1,4
IS
Continuous Source Current
ISM
Pulsed Source Current2,4
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
IF=5A , dI/dt=100A/µs , TJ=25℃
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
Unit
UG2504W
Dual N-Ch 20V Fast Switching MOSFETs
Typical Characteristics
50
ID=5A
RDSON (mΩ)
40
30
20
10
1
Fig.1 Typical Output Characteristics
2
VGS3 (V)
4
5
Fig.2 On-Resistance vs. Gate-Source
IS Source Current(A)
6
4
TJ=150℃
TJ=25℃
2
0
0
0.3
0.6
0.9
VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of reverse
Fig.4 Gate-Charge Characteristics
1.8
Normalized On Resistance
1.8
1.4
Normalized VGS(th)
1.4
1.0
1
0.6
0.6
0.2
0.2
-50
0
50
100
-50
150
0
50
100
TJ , Junction Temperature (℃)
TJ ,Junction Temperature (℃ )
Fig.5 VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
3
150
UG2504W
Dual N-Ch 20V Fast Switching MOSFETs
10000
Capacitance (pF)
F=1.0MHz
Ciss
1000
Coss
100
Crss
10
1
5
9
13
17
21
VDS Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
Normalized Thermal Response (RθJA)
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
P DM
0.01
T ON
T
SINGLE
D = TON/T
TJpeak = TC+P DMXRθJC
0.001
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
1000