UG2504W Dual N-Ch 20V Fast Switching MOSFETs General Description Product Summery The UG2504W is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The UG2504W meet the RoHS and Green Product requirement with full function reliability approved. BVDSS RDS(ON) ID 20V 22mΩ 5.8A Applications z Power management in portable and battery operated products z One cell battery pack protection Features z Load Switch TSSOP8 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM Rating Units Drain-Source Voltage 20 V Gate-Source Voltage ±8 V 1 5.8 A 1 4.6 A 24 A Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 1.1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC 1 Thermal Resistance Junction-Case 1 1 Typ. Max. Unit --- 110 ℃/W --- 70 ℃/W UG2504W Dual N-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V Reference to 25℃ , ID=1mA --- 0.028 --- V/℃ VGS=4.5V , ID=5A --- 17 22 VGS=2.5V , ID=4A --- 22 28 VGS=1.8V , ID=3A mΩ --- 35 44 0.3 0.6 1 V --- -3.21 --- mV/℃ VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=5A --- 28 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.5 3 Ω Qg Total Gate Charge (4.5V) --- 14.8 20.7 --- 1.44 2.0 Qgs Qgd Td(on) VDS=15V , VGS=4.5V , ID=5A Gate-Source Charge Gate-Drain Charge --- 2.8 3.9 Turn-On Delay Time --- 3.2 6.4 uA nC Rise Time VDD=10V , VGS=10V , RG=3.3Ω --- 40 80 Turn-Off Delay Time ID=5A --- 40.8 82 Fall Time --- 9.2 18.4 Ciss Input Capacitance --- 952 1333 Coss Output Capacitance --- 90 126 Crss Reverse Transfer Capacitance --- 79 111 Min. Typ. Max. --- --- 5.8 A --- --- 24 A --- --- 1.2 V --- 8.9 --- nS --- 2.9 --- nC Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current2,4 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 2 VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=5A , dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 Unit UG2504W Dual N-Ch 20V Fast Switching MOSFETs Typical Characteristics 50 ID=5A RDSON (mΩ) 40 30 20 10 1 Fig.1 Typical Output Characteristics 2 VGS3 (V) 4 5 Fig.2 On-Resistance vs. Gate-Source IS Source Current(A) 6 4 TJ=150℃ TJ=25℃ 2 0 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of reverse Fig.4 Gate-Charge Characteristics 1.8 Normalized On Resistance 1.8 1.4 Normalized VGS(th) 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 -50 150 0 50 100 TJ , Junction Temperature (℃) TJ ,Junction Temperature (℃ ) Fig.5 VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 3 150 UG2504W Dual N-Ch 20V Fast Switching MOSFETs 10000 Capacitance (pF) F=1.0MHz Ciss 1000 Coss 100 Crss 10 1 5 9 13 17 21 VDS Drain to Source Voltage (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 T ON T SINGLE D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform 4 1000