US2401 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The US2401 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The US2401 meet the RoHS and Green Product requirement , with full function reliability approved. BVDSS RDS(ON) ID -20V 60mΩ -3.4A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features z Advanced high cell density Trench technology SOT 23 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM Rating Units Drain-Source Voltage -20 V Gate-Source Voltage ±12 V 1 -3.4 A 1 -2.7 A -14 A Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC 1 Thermal Resistance Junction-Case 1 1 Typ. Max. Unit --- 125 ℃/W --- 80 ℃/W US2401 P-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V Reference to 25℃ , ID=-1mA --- -0.014 --- V/℃ VGS=-4.5V , ID=-3A --- 50 60 VGS=-2.5V , ID=-2A --- 73 90 -0.5 -0.8 -1.2 V --- 3.95 --- mV/℃ VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 12.8 --- S Qg Total Gate Charge (-4.5V) --- 10.2 14.3 Qgs Gate-Source Charge --- 1.89 2.6 Qgd Gate-Drain Charge --- 3.1 4.3 VDS=-15V , VGS=-4.5V , ID=-3A uA nC --- 5.6 11.2 Rise Time VDD=-10V , VGS=-4.5V , --- 40.8 73 Turn-Off Delay Time RG=3.3Ω, ID=-3A --- 33.6 67 Fall Time --- 18 36 Ciss Input Capacitance --- 857 1200 Coss Output Capacitance --- 114 160 Crss Reverse Transfer Capacitance --- 108 151 Min. Typ. Max. Unit --- --- -3.4 A --- --- -14 A --- --- -1 V --- 21.8 --- nS --- 6.9 --- nC Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current2,4 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-3A , dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 US2401 P-Ch 20V Fast Switching MOSFETs Typical Characteristics 100 -ID=3A RDSON (mΩ) 80 60 40 1 Fig.1 Typical Output Characteristics 2 3 -VGS (V) 4 5 Fig.2 On-Resistance vs. G-S Voltage -IS Source Current(A) 4 3 TJ=150℃ TJ=25℃ 2 1 0 0 0.2 0.4 0.6 0.8 -VSD , Source-to-Drain Voltage (V) 1 Fig.3 Forward Characteristics of Reverse Fig.4 Gate-charge Characteristics 1.8 Normalized On Resistance 1.8 Normalized VGS(th) 1.4 1 0.6 1.4 1.0 0.6 0.2 0.2 -50 0 50 100 TJ ,Junction Temperature (℃ ) -50 150 0 50 100 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 3 150 US2401 P-Ch 20V Fast Switching MOSFETs 1000 100.00 Ciss 100us 10ms -ID (A) C (pF) 10.00 Coss 100 100ms 1.00 Crss 1s 0.10 DC TA=25℃ Single Pulse F=1.0MHz 10 0.01 1 5 9 13 17 -VDS (V) 21 0.1 Fig.7 Capacitance 1 10 -VDS (V) 100 Fig.8 Safe Operating Area Normalized Thermal Response (R θJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM 0.001 TON SINGLE PULSE T D = TON/T TJpeak = TC + PDM x RθJC 0.0001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform 4 1000