UNITPOWER US2401

US2401
P-Ch 20V Fast Switching MOSFETs
General Description
Product Summery
The US2401 is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The US2401 meet the RoHS and Green Product
requirement , with full function reliability approved.
BVDSS
RDS(ON)
ID
-20V
60mΩ
-3.4A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Features
z Advanced high cell density Trench technology
SOT 23 Pin Configuration
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
[email protected]=25℃
[email protected]=70℃
IDM
Rating
Units
Drain-Source Voltage
-20
V
Gate-Source Voltage
±12
V
1
-3.4
A
1
-2.7
A
-14
A
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
2
3
[email protected]=25℃
Total Power Dissipation
1
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
RθJA
Thermal Resistance Junction-Ambient
RθJC
1
Thermal Resistance Junction-Case
1
1
Typ.
Max.
Unit
---
125
℃/W
---
80
℃/W
US2401
P-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
VGS=0V , ID=-250uA
-20
---
---
V
Reference to 25℃ , ID=-1mA
---
-0.014
---
V/℃
VGS=-4.5V , ID=-3A
---
50
60
VGS=-2.5V , ID=-2A
---
73
90
-0.5
-0.8
-1.2
V
---
3.95
---
mV/℃
VDS=-16V , VGS=0V , TJ=25℃
---
---
-1
VDS=-16V , VGS=0V , TJ=55℃
---
---
-5
VGS=VDS , ID =-250uA
mΩ
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±12V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-3A
---
12.8
---
S
Qg
Total Gate Charge (-4.5V)
---
10.2
14.3
Qgs
Gate-Source Charge
---
1.89
2.6
Qgd
Gate-Drain Charge
---
3.1
4.3
VDS=-15V , VGS=-4.5V , ID=-3A
uA
nC
---
5.6
11.2
Rise Time
VDD=-10V , VGS=-4.5V ,
---
40.8
73
Turn-Off Delay Time
RG=3.3Ω, ID=-3A
---
33.6
67
Fall Time
---
18
36
Ciss
Input Capacitance
---
857
1200
Coss
Output Capacitance
---
114
160
Crss
Reverse Transfer Capacitance
---
108
151
Min.
Typ.
Max.
Unit
---
---
-3.4
A
---
---
-14
A
---
---
-1
V
---
21.8
---
nS
---
6.9
---
nC
Td(on)
Tr
Td(off)
Tf
Turn-On Delay Time
VDS=-15V , VGS=0V , f=1MHz
ns
pF
Diode Characteristics
Symbol
Parameter
Conditions
1,4
IS
Continuous Source Current
ISM
Pulsed Source Current2,4
2
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25℃
IF=-3A , dI/dt=100A/µs , TJ=25℃
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
US2401
P-Ch 20V Fast Switching MOSFETs
Typical Characteristics
100
-ID=3A
RDSON (mΩ)
80
60
40
1
Fig.1 Typical Output Characteristics
2
3
-VGS (V)
4
5
Fig.2 On-Resistance vs. G-S Voltage
-IS Source Current(A)
4
3
TJ=150℃
TJ=25℃
2
1
0
0
0.2
0.4
0.6
0.8
-VSD , Source-to-Drain Voltage (V)
1
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-charge Characteristics
1.8
Normalized On Resistance
1.8
Normalized VGS(th)
1.4
1
0.6
1.4
1.0
0.6
0.2
0.2
-50
0
50
100
TJ ,Junction Temperature (℃ )
-50
150
0
50
100
TJ , Junction Temperature (℃)
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
3
150
US2401
P-Ch 20V Fast Switching MOSFETs
1000
100.00
Ciss
100us
10ms
-ID (A)
C (pF)
10.00
Coss
100
100ms
1.00
Crss
1s
0.10
DC
TA=25℃
Single Pulse
F=1.0MHz
10
0.01
1
5
9
13
17
-VDS (V)
21
0.1
Fig.7 Capacitance
1
10
-VDS (V)
100
Fig.8 Safe Operating Area
Normalized Thermal Response (R θJA)
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
0.001
TON
SINGLE PULSE
T
D = TON/T
TJpeak = TC + PDM x RθJC
0.0001
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
1000