Unitpower US3421 P-Ch 30V Fast Switching MOSFETs General Description Product Summery The US3421 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON -30V ID 70m -3.2A Applications The US3421 meet the RoHS and Green Product requirement with full function reliability approved. High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Features Load Switch SOT23 Pin Configuration Advanced high cell density Trench technology Super Low Gate Charge D Excellent CdV/dt effect decline Green Device Available G Absolute Maximum Ratings S Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Sou ce Voltage 20 V 1 -3.2 A 1 -2.5 A -13 A Total Power Dissipation 1 W TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 ID@TA=25 ID@TA=70 IDM PD@TA=25 Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current 2 3 Thermal Data Symbol R R JA JC Parameter Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case 1 1 Typ. Max. Unit --- 125 /W --- 80 /W Rev A.01 D012510 1 Unitpower US3421 P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 Symbol BVDSS BVDSS RDS(ON) VGS(th) , unless otherwise noted) Parameter Conditions Drain-Source Breakdown Voltage TJ BVDSS Temperature Coefficient Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit -30 --- --- V --- -0.02 --- VGS=-10V , ID=-3A --- 55 70 VGS=-4.5V , ID=-1.5A --- 90 120 -1.0 -1.5 -2.5 --- 4.32 --- VDS=-24V , VGS=0V , TJ=25 --- --- -1 VDS=-24V , VGS=0V , TJ=55 --- --- -5 20V , VDS=0V --- --- 100 nA S VGS=0V , ID=-250uA Reference to 25 , ID=-1mA VGS=VDS , ID =-250uA VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS gfs Forward Transconductance VDS=-5V , ID=-3A --- 4.8 --- Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 24 48 Qg Total Gate Charge (-4.5V) --- 5.22 7.3 Qgs Gate-Source Charge --- 1.25 1.8 Qgd Gate-Drain Charge --- 2.3 3.2 Td(on) Turn-On Delay Time VDS=-20V , VGS=-4.5V , ID=-3A V/ m V mV/ uA nC --- 18.4 37 Rise Time VDD=-15V , VGS=-10V , RG=3.3 --- 11.4 21 Turn-Off Delay Time ID=-1A --- 39.4 79 Fall Time --- 5.2 10.4 Ciss Input Capacitance --- 463 650 Coss Output Capacitance --- 82 115 Crss Reverse Transfer Capacitance --- 68 95 Min. Typ. Max. --- --- -3.2 A --- --- -13 A --- --- -1 V Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage2 2,4 Conditions 1,4 VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25 Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width 300us , duty cycle 2% 3.The power dissipation is limited by 150 junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 Unit Unitpower US3421 P-Ch 30V Fast Switching MOSFETs Typical Characteristics 135.0 14 ID= -3A VGS=-10V VGS=-7V 10 115.0 VGS=-5V 8 RDSON (m ) -ID Drain Current (A) 12 VGS=-4.5V 6 VGS=-3V 4 95.0 75.0 2 0 55.0 0 0.5 1 1.5 2 2.5 3 3.5 4 -VDS , Drain-to-Source Voltage (V) 4.5 5 2 Fig.1 Typical Output Characteristics 4 6 -VGS (V) 8 10 Fig.2 On-Resistance vs. G-S Voltage 10 10 -VGS Gate to Source Voltage (V) -IS Source Current(A) VDS=-20V 7.5 5 TJ=150 TJ=25 2.5 0 0 0.3 0.6 0.9 1.2 ID=-3A 8 6 4 2 0 0 -VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse 5 7.5 QG , Total Gate Charge (nC) 10 Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance 1.5 Normalized VGS(th) 2.5 1.5 1 1.0 0.5 0.5 0 -50 0 50 TJ ,Junction Temperature ( 100 ) -50 150 0 50 100 TJ , Junction Temperature ( ) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 3 150 Unitpower US3421 P-Ch 30V Fast Switching MOSFETs 1000 100.00 F=1.0MHz 100 100us 10.00 -ID (A) Capacitance (pF) Ciss Coss 10ms 1.00 100ms Crss 1s 0.10 TA=25 Single Pulse 10 DC 0.01 1 5 9 13 17 21 25 0.1 -VDS , Drain to Source Voltage (V) 1 Fig.7 Capacitance 10 -VDS (V) 100 Fig.8 Safe Operating Area 1 Normalized Thermal Response (R JA ) DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM 0.001 TON SINGLE PULSE T D = TON/T TJpeak = TA + PDM x R JA 0.0001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform 4 1000