TGA4541-SM Ka-Band Variable Gain Driver Amplifier Applications 4541 VSAT Point-to-Point Radio Test Equipment & Sensors 1248 5342 QFN 6x6mm 40L Product Features Functional Block Diagram Frequency Range: 28 – 31 GHz Power: 23 dBm P1dB Gain: 33 dB Output TOI: 31 dBm Attenuation Range: 30 dB Bias: Vd = 5 V, Id = 330 mA, Vg = -0.7 V Typical Package Dimensions: 6.0 x 6.0 x 0.85 mm General Description The TriQuint TGA4541-SM is a variable gain amplifier to be used as a driver amplifier in linear Ka band applications. The TGA4541-SM operates from 28 to 31 GHz and is designed using TriQuint’s pHEMT production process. Pin Configuration Pin # Symbol The TGA4541-SM is available in a low-cost, surface mount 40 lead 6x6 QFN package and is ideally suited for VSAT ground terminals and Point-to-Point Radio applications. 1, 2, 3, 5, 6, 7, 8, 9, 10, 11, 12, 13, 15, 17, 19, 20, 21, 22, 23, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 37, 39, 40 4 14 16 18 24 35 36 38 Lead-free and RoHS compliant. Ordering Information The TGA4541-SM typically provides 23 dBm of linear power with 32 dB of small signal gain and 31 dBm of output TOI. The attenuation range is typically 30 dB. Evaluation Boards are available upon request. Part No. ECCN TGA4541-SM EAR99 N/C RF IN Vg Vd2 Vd3 RF OUT Vc Gnd Vd1 Description Ka-band Variable Gain Amp Standard T/R size = 500 pieces on a 7” reel. Preliminary Data Sheet: Rev- 05/08/12 © 2012 TriQuint Semiconductor, Inc. - 1 of 14 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA4541-SM Ka-Band Variable Gain Driver Amplifier Specifications Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Drain Voltage,Vd Drain Current, Id1 Drain Current, Id2+Id3 Power Dissipation, Pdiss RF Input Power, CW, 50Ω,T = 25ºC Channel Temperature, Tch Mounting Temperature (30 Seconds) Storage Temperature +6 V 96 mA 672 mA 4.0 W +20 dBm 200 oC 260 oC -40 to 150 oC Vd Id1 Id2+Id3 Vg Min Typical Max Units 5 60 270 -0.7 V mA mA V Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25ºC, Vd = 5 V, Id = 330 mA (Id1 = 60 mA, Id2+Id3 = 270 mA), Vc = -1.00 V, Vg = -0.7 V typical. Id2+Id3 are held constant throughout the test. Parameter Operational Frequency Range Gain Attenuation Range Input Return Loss Output Return Loss Output Power @ 1dB Gain Compression (max gain) Output TOI Gain Temperature Coefficient (max gain) Power Temperature Coefficient (max gain) Preliminary Data Sheet: Rev- 05/08/12 © 2012 TriQuint Semiconductor, Inc. Min Typical 28 - 2 of 14 - Max 31 Units 33 30 18 17 23 GHz dB dB dB dB dBm 31 -0.08 -0.008 dBm dB/°C dB/°C Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA4541-SM Ka-Band Variable Gain Driver Amplifier Specifications (cont.) Thermal and Reliability Information Parameter Condition Rating Thermal Resistance, θJC, measured to back of package Channel Temperature (Tch), and Median Lifetime (Tm) Channel Temperature (Tch), and Median Lifetime (Tm) Under RF Drive Tbase = 85 °C Tbase = 85 °C, Vd = 5 V, Id = 330 mA, Pdiss = 1.65 W Tbase = 85 °C, Vd = 5 V, Id = 330 mA, Pout = 24 dBm, Pdiss = 1.40 W θJC = 34.5 °C/W Tch = 142 °C Tm = 2.8 E+6 Hours Tch = 133 °C Tm = 7.9 E+6 Hours Median Lifetime (Tm) vs. Channel Temperature (Tch) Median Lifetime, Tm (Hours) 1E+15 1E+14 1E+13 1E+12 1E+11 1E+10 1E+09 1E+08 1E+07 1E+06 1E+05 FET5 1E+04 25 50 75 100 125 150 175 200 Channel Temperature, Tch (°C) Preliminary Data Sheet: Rev- 05/08/12 © 2012 TriQuint Semiconductor, Inc. - 3 of 14 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA4541-SM Ka-Band Variable Gain Driver Amplifier Typical Performance Id2+Id3 are held constant throughout the test. Gain vs. Frequency IRL, ORL vs. Frequency Vd = 5 V, Id = 330 mA, Vc = -1.00 V, Vg = -0.7 V, 25 C Vd = 5 V, Id = 330 mA, Vc = -1.00 V, Vg = -0.7 V, 25 C 45 0 40 5 Return Loss (dB) 30 25 20 15 10 0 15 20 30 28 28.5 29 29.5 30 Frequency (GHz) 30.5 31 28 28.5 29 29.5 30 Frequency (GHz) 30.5 31 Output Power vs. Frequency Power, Gain, Id vs. Input Power Vd = 5 V, Idq = 330 mA, Vc = -1.00 V, Vg = - 0.7 V, 25 °C Vd = 5 V, Idq = 330 mA, Vc = -1.00 V, Vg = -0.7 V, 25 C Output Power (dBm), Gain (dB) 26 25 Output Power (dBm) IRL 25 5 24 23 22 Psat 21 P1dB 20 19 18 28 28.5 29 29.5 30 Frequency (GHz) 30.5 50 600 @ 29.5 GHz 40 500 30 400 20 300 Pout Gain Id 10 200 0 100 -32 31 -28 -24 -20 -16 -12 -8 Input Power (dBm) -4 0 OTOI vs. Frequency OTOI vs. Frequency vs. Pout/Tone Vd = 5 V, Idq = 330 mA, Vc = -1.00 V, Vg = -0.7 V, 25 °C Vd = 5 V, Idq = 330 mA, Vc = -1.00 V, Vg = -0.7 V, 25 °C 40 40 12 dBm Pout/Tone 35 35 30 OTOI (dBm) 30 OTOI (dBm) ORL 10 Id (mA) Gain (dB) 35 25 20 15 20 15 10 10 5 5 0 14 dBm Pout/Tone 12 dBm Pout/Tone 10 dBm Pout/Tone 8 dBm Pout/Tone 4 dBm Pout/Tone 0 dBm Pout/Tone 25 0 28 28.5 29 29.5 30 Frequency (GHz) Preliminary Data Sheet: Rev- 05/08/12 © 2012 TriQuint Semiconductor, Inc. 30.5 31 28 - 4 of 14 - 28.5 29 29.5 30 Frequency (GHz) 30.5 31 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA4541-SM Ka-Band Variable Gain Driver Amplifier Typical Performance (cont.) Id2+Id3 are held constant throughout the test. Gain vs. Frequency vs. Drain Voltage Gain vs. Frequency vs. Temperature Id = 330 mA, Vc = -1.00 V, Vg = -0.7 V, 25 C Vd = 5 V, Id = 330 mA, Vc = -1.00 V, Vg = -0.7 V 40 45 38 40 35 Gain (dB) Gain (dB) 36 34 32 5.5 V 5.0 V 4.5 V 30 28 30 25 -40 C 25 C 85 C 20 15 10 5 26 0 28 28.5 29 29.5 30 Frequency (GHz) 30.5 31 28 38 25 36 24 34 OTOI (dBm) P1dB (dBm) 26 23 22 -40 °C 25 °C 32 30 28 28.5 29 29.5 30 Frequency (GHz) 30.5 31 29 29.5 30 Frequency (GHz) 30.5 31 Vd = 5 V, Id = 330 mA, Vg = -0.7 V, 25 °C 45 45 40 40 35 35 Attenuation (dB) Attenuation (dB) 28.5 Attenuation vs. Vc vs. Frequency Vd = 5 V, Id = 330 mA, Vg = -0.7 V, 29 GHz 30 10 85 C 28 Attenuation vs. Vc vs. Temperature 15 25 C 20 28 20 -40 C 26 22 18 25 31 12 dBm Pout/Tone 24 85 °C 19 30.5 Vd = 5 V, Idq = 330 mA, Vc = -1.00 V, Vg = -0.7 V Vd = 5 V, Idq = 330 mA, Vc = -1.00 V, Vg = - 0.7 V 20 29 29.5 30 Frequency (GHz) OTOI vs. Frequency vs. Temperature Power vs. Frequency vs. Temperature 21 28.5 -40 °C 25 °C 85 °C 5 30 25 28GHz 20 29GHz 15 30GHz 10 31GHz 5 0 0 -1 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 Control Voltage (V) Preliminary Data Sheet: Rev- 05/08/12 © 2012 TriQuint Semiconductor, Inc. 0 -1 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 Control Voltage (V) - 5 of 14 - 0 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA4541-SM Ka-Band Variable Gain Driver Amplifier Typical Performance (cont.) Id2+Id3 are held constant throughout the test. Power vs. Frequency vs. Control Voltage Gain vs. Frequency vs. Control Voltage Vd = 5 V, Idq = 330 mA, Vg = - 0.7 V, 25 °C 45 40 35 30 25 20 15 10 5 0 -5 26 22 -0.85V -0.71V -0.62V -0.56V -0.48V 0.00V -0.85V -0.71V 18 -0.62V 14 10 -0.56V 6 -0.48V 2 0.00V -2 28 28.5 29 29.5 30 Frequency (GHz) 30.5 31 28 28.5 29 29.5 30 Frequency (GHz) 30.5 31 OTOI vs. Frequency vs. Control Voltage OTOI vs. Pout/Tone vs. Frequency Vd = 5 V, Idq = 330 mA, Vg = -0.7 V, 25 °C Vd = 5 V, Idq = 330 mA, Vc = -1.00 V, Vg = -0.7 V, 25 °C 40 12 dBm Pout/Tone 35 OTOI (dBm) 30 OTOI (dBm) -1.00V -1.00V P1dB (dBm) Gain (dB) Vd = 5 V, Id = 330 mA, Vg = -0.7 V, 25 C 25 -1.00 V -0.85 V -0.71 V -0.62 V 20 15 10 5 0 28 28.5 29 29.5 30 Frequency (GHz) Preliminary Data Sheet: Rev- 05/08/12 © 2012 TriQuint Semiconductor, Inc. 30.5 31 36 34 32 30 28 26 24 22 20 18 16 28GHz 29GHz 30GHz 31GHz -2 - 6 of 14 - 0 2 4 6 8 Pout/tone (dBm) 10 12 14 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA4541-SM Ka-Band Variable Gain Driver Amplifier Application Circuit Vd1 Vc 4541 YYWW XXXX RF Input RF Output Vg Vd2 + Vd3 Bias-up Procedure Bias-down Procedure Set Vg to -1.5 V Set Vd1 to 5 V Set Vd2+Vd3 to 5 V Set Vc to -1.00 V Adjust Vg more positive until quiescent Id2+Id3 = 270 mA, Id1 = 60 mA, Vg ~ -0.7 V Typical Apply RF signal Vd1 and Vd2+Vd3 should be separately monitored. Turn off RF supply Reduce Vg to -1.5 V Set Vc to 0 V Reduce Vd2+Vd3 to 0 V Reduce Vd1 to 0 V The TGA4541-SM will be marked with the “4541” designator and a lot code marked below the part designator. The “YY” represents the last two digits of the year the part was manufactured, the “WW” is the work week, and the “XXXX” is an autogenerated assembly lot number. Preliminary Data Sheet: Rev- 05/08/12 © 2012 TriQuint Semiconductor, Inc. - 7 of 14 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA4541-SM Ka-Band Variable Gain Driver Amplifier Pin Description Top View Pin 1, 2, 3, 5, 6, 7, 8, 9, 10, 11, 12, 13, 19, 20, 21, 22, 23, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 39, 40 4 Symbol Description N/C No internal connection; must be grounded on PCB. RF IN RF Input. Gate voltage. Bias network is required; see Application Circuit on page 7 as an example. No internal connection; should be left open. Drain voltage. Bias network is required; see Application Circuit on page 7 as an example. Drain voltage. Bias network is required; see Application Circuit on page 7 as an example. RF Output. Control voltage. Bias network is required; see Application Circuit on page 7 as an example. Internally grounded through a resistor; must be grounded on PCB. Drain voltage. Bias network is required; see Application Circuit on page 7 as an example. Backside paddles; must be grounded on PCB. Multiple vias should be employed to minimize inductance and thermal resistance; see Mounting Configuration on page 12 for suggested footprint. 14 Vg 15, 17, 37 N/C 16 Vd2 18 Vd3 24 RF OUT 35 Vc 36 GND 38 Vd1 41 GND Preliminary Data Sheet: Rev- 05/08/12 © 2012 TriQuint Semiconductor, Inc. - 8 of 14 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA4541-SM Ka-Band Variable Gain Driver Amplifier Applications Information PC Board Layout Top RF layer is 0.010” thick Rogers RO3203, єr = 3.02. Metal layers are 1/2-oz copper. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. For further technical information, refer to the TGA4541-SM Product Information page. C5 C6 C1 C2 Detail is on the next page C3 C4 R2 R1 C8 C7 C9 C10 Bill of Material Ref Des Value Description Manufacturer C1- C4 C5 - C8 C9 - C10 R1- R2 100 pF 1 µF 10 µF 15 Ω Cap, 0402, 20V, 5%, COG Cap, 0603, 25V, 5%, X5R Cap, 0805, 25V, 5%, X5R Res, 0402, 0.1W, SMD various various various various Preliminary Data Sheet: Rev- 05/08/12 © 2012 TriQuint Semiconductor, Inc. - 9 of 14 - Part Number Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA4541-SM Ka-Band Variable Gain Driver Amplifier Applications Information (cont.) PC Board Tuning Layout Dimensions are in millimeters. Preliminary Data Sheet: Rev- 05/08/12 © 2012 TriQuint Semiconductor, Inc. - 10 of 14 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA4541-SM Ka-Band Variable Gain Driver Amplifier Mechanical Information Package Information and Dimensions All dimensions are in millimeters. This package is lead-free/RoHS-compliant with a copper alloy base (CDA194), and the plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 °C reflow temperature) and tin-lead (maximum 245 °C reflow temperature) soldering processes. Preliminary Data Sheet: Rev- 05/08/12 © 2012 TriQuint Semiconductor, Inc. - 11 of 14 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA4541-SM Ka-Band Variable Gain Driver Amplifier Mechanical Information (cont.) Mounting Configuration All dimensions are in millimeters. Notes: 1. Ground vias are critical for the proper performance of this device. Vias have a drill diameter of 0.25 mm. Tape and Reel Information Tape and reel specifications for this part are also available on the TriQuint website in the “Application Notes” section. Standard T/R size = 500 pieces on a 7 x 0.5” reel. CARRIER AND COVER TAPE DIMENSIONS Part Feature Cavity Length Width Depth Pitch Cavity to Perforation Length Direction Cavity to Perforation Width Direction Width Width Distance Between Centerline Cover Tape Carrier Tape Preliminary Data Sheet: Rev- 05/08/12 © 2012 TriQuint Semiconductor, Inc. - 12 of 14 - Symbol Size (in) Size (mm) A0 B0 K0 P1 0.248 0.248 0.043 0.472 6.3 6.3 1.1 12.0 P2 0.079 2.0 F 0.295 7.5 C W 0.561 0.63 14.25 16.0 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA4541-SM Ka-Band Variable Gain Driver Amplifier Product Compliance Information ESD Information Solderability Compatible with the latest version of J-STD-020, Lead free solder, 260°C ESD Rating: Value: Test: Standard: This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). TBD TBD Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating Level TBD at +260 °C convection reflow The part is rated Moisture Sensitivity Level TBD at 260°C per JEDEC standard IPC/JEDEC J-STD-020. This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free ECCN US Department of Commerce EAR99 Recommended Soldering Temperature Profile Preliminary Data Sheet: Rev- 05/08/12 © 2012 TriQuint Semiconductor, Inc. - 13 of 14 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA4541-SM Ka-Band Variable Gain Driver Amplifier Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: [email protected] Tel: Fax: +1.972.994.8465 +1.972.994.8504 For technical questions and application information: Email: [email protected] Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Preliminary Data Sheet: Rev- 05/08/12 © 2012 TriQuint Semiconductor, Inc. - 14 of 14 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network®