TGC4610-SM K-Band Downconverter Applications • • • 4 610 VSAT Point-to-Point Radio Test Equipment & Sensors 1 23 2 64 25 28-pin 5x5 mm QFN package Product Features • • • • • • • Functional Block Diagram RF Frequency Range: 17 – 27 GHz IF Frequency: DC – 4 GHz LO Frequency: 6.5 – 15.5 GHz LO Input Power: 2 to 9 dBm Conversion Gain: 15 dB Noise Figure: ≤ 2.5 dB Package Dimensions: 5.0 x 5.0 x 1.3 mm X2 General Description Pin Configuration The TriQuint TGC4610-SM is a K-Band Image Reject Downconverter. The TGC4610-SM operates over an RF frequency range of 17 to 27 GHz and LO from 6.5 to 15.5 GHz with IF outputs from DC to 4 GHz. This part is designed using TriQuint’s pHEMT production process. Pin # The TGC4610-SM integrates an LNA, and image reject mixer driven by a multiplier. It typically provides an Input IP3 of 3 dBm at –25 dBm input power per tone and has a conversion gain of 15 dB and noise figure of 2.5 dB or less. The TGC4610-SM is available in a low-cost, surface mount 28 lead 5x5 mm QFN package and is ideally suited for Point-to-Point Radio, and KBand VSAT Ground Terminal applications. Lead-free and RoHS compliant. Function Label 1, 7, 8, 14, 15, 21, 22, 28 2, 4, 5, 6, 12, 16, 18, 20, 25, 26 3 9 10 11 13 17 19 23 24 27 GND NC RF IN LO IN VDLO1 VGX VDLO23 IF1 IF2 VDRF4V VDRF VGRF Ordering Information Evaluation Boards are available upon request. Part No. ECCN Description TGC4610-SM EAR99 K-band Downconverter Standard T/R size = 500 pieces on a 13” reel. Preliminary Data Sheet: Rev A 10/11/12 © 2012 TriQuint Semiconductor, Inc. - 1 of 26 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC4610-SM K-Band Downconverter Specifications Absolute Maximum Ratings Parameter Recommended Operating Conditions Rating VDRF VDLO IDRF IDLO VGX, VGRF Power Dissipation 6V 6V 150 mA 375 mA -3 to 0 V 1.6 W RF Input Power, 50Ω, T = 25°C Channel Temperature, Tch Storage Temperature 10 dBm Parameter Min Typ Operating Temp. Range -40 VDRF IDRF VDLO +25 3 68 3 IDLO VGRF VGX LO Input Power 200 °C -65 to 125 °C Max Units +85 °C V mA V 160 -0.65 -1.1 2 mA V V dBm 9 Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: IF Input Power = -25 dBm, LO Input Power = 5.5 dBm, VGX = -1.1 V, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V. Parameter Conditions RF Frequency Range LO Frequency Range IF Frequency Range © 2012 TriQuint Semiconductor, Inc. Typ Max Units 27 15.5 4 GHz GHz GHz 9 160 68 15 dBm mA mA dB 3 dBm 20 2.5 dB dB 17 6.5 DC LO Input Power Drain Current, LO (IDLO) Drain Current, RF (IDRF) Conversion Gain Input Third Order Intercept Point (IIP3) Image Rejection (IMR) Noise Figure Preliminary Data Sheet: Rev A 10/11/12 Min 2 - 2 of 26 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC4610-SM K-Band Downconverter Specifications Thermal and Reliability Information Parameter Condition Thermal Resistance, θJC, measured to back of package Channel Temperature (Tch), and Median Lifetime (Tm) Channel Temperature (Tch), and Median Lifetime (Tm) Under RF Drive Preliminary Data Sheet: Rev A 10/11/12 © 2012 TriQuint Semiconductor, Inc. Tbase = 85 °C Tbase = 85 °C, VDRF = 3 V, IDRF = 68 mA VDLO = 3 V, IDLO = 160 60 mA Pdiss = 0.68 W Tbase = 85 °C VDRF = 3 V, IDRF = 68 mA VDLO = 3 V, IDLO = 220 mA Pin = -25 dBm Pdiss = 0.86 W - 3 of 26 - Rating θJC = 73.5 °C/W Tch = 135 °C Tm = 5.8 E+6 Hours Tch = 148 °C Tm = 1.3 E+6 Hours Disclaimer: Subject to change without notice ® Connecting the Digital World to the Global Network TGC4610-SM K-Band Downconverter Typical Performance IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V. Data taken with external IF hybrid. Conversion Gain vs. RF vs. IF Conversion Gain vs. RF vs. IF LO = 5.5 dBm, VGX = -1.1 V, USB, 25 °C LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 °C 20 1 GHz 2 GHz 3 GHz 4 GHz 18 16 Conversion Gain (dB) Conversion Gain (dB) 20 14 12 1 GHz 2 GHz 3 GHz 4 GHz 18 16 14 12 10 10 16 18 20 22 24 RF Frequency (GHz) 26 16 28 Image Rejection vs. RF vs. IF 26 28 LO = 5.5 dBm, VGX = -1.1 V, USB, 25 °C 60 50 Image Rejection (dB) 60 Image rejection (dB) 20 22 24 RF Frequency (GHz) Image Rejection vs. RF vs. IF LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 °C 1 GHz 2 GHz 3 GHz 4 GHz 40 30 20 10 1 GHz 2 GHz 3 GHz 4 GHz 50 40 30 20 10 0 0 16 18 20 22 24 RF Frequency (GHz) 26 28 16 26 Input IP3 vs. RF vs. IF LO = 5.5 dBm, VGX = -1.1 V, USB, 25 °C 10 8 8 6 4 2 1 GHz 2 GHz 3 GHz 4 GHz -2 20 22 24 RF Frequency (GHz) Input IP3 vs. RF vs. IF 10 0 18 LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 °C Input IP3 (dBm) Input IP3 (dBm) 18 28 6 4 2 1 GHz 2 GHz 3 GHz 4 GHz 0 -2 -4 -4 16 18 20 22 24 RF Frequency (GHz) Preliminary Data Sheet: Rev A 10/11/12 © 2012 TriQuint Semiconductor, Inc. 26 16 28 - 4 of 26 - 18 20 22 24 RF Frequency (GHz) 26 28 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC4610-SM K-Band Downconverter Typical Performance IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V. Data taken with external IF hybrid. RF Isolation vs. RF vs. IF RF Isolation vs. RF vs. IF LO = 5.5 dBm, VGX = -1.1 V, USB, 25 °C LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 °C 15 1 GHz 2 GHz 3 GHz 4 GHz 10 5 0 5 0 -5 -5 -10 -10 16 18 20 22 24 RF Frequency (GHz) 26 16 28 LO Isolation vs. LO vs. IF 60 60 50 40 1 GHz 2 GHz 3 GHz 4 GHz 10 28 50 40 1 GHz 2 GHz 3 GHz 4 GHz 30 20 10 0 0 6 8 10 12 LO Frequency (GHz) 14 6 16 2 x LO Isolation vs. LO vs. IF 70 2 x Rejection LO Isolation (dB) Image Ratio (dB) 60 40 50 1 GHz 2 GHz 3 GHz 4 GHz 50 40 30 20 20 10 10 20 10 0 8 10 12 LO Frequency (GHz) Preliminary Data Sheet: Rev A 10/11/12 © 2012 TriQuint Semiconductor, Inc. 14 14 16 1 GHz 2 GHz 3 GHz 4 GHz 30 40 30 6 10 12 LO Frequency (GHz) LO = 5.5 dBm, V, USB, USB, 25 25 °C °C Vcontrol = 0 V,VGX LO ==6-1.1 dBm, 70 50 60 8 2 x LO vs.and LOIF vs.Input IF IMR vs. Isolation RF Output LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 °C 2 x LO Isolation (dB) 26 LO = 5.5 dBm, VGX = -1.1 V, USB, 25 °C 70 20 20 22 24 RF Frequency (GHz) LO Isolation vs. LO vs. IF 70 30 18 LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 °C LO Isolation (dB) LO Isolation (dB) 1 GHz 2 GHz 3 GHz 4 GHz 10 RF Isolation (dB) RF Isolation (dB) 15 00 16 - 5 of 26 - 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz 6 10 118 12 10 13 12 14 LO RF Frequency Frequency (GHz) (GHz) 1415 16 16 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC4610-SM K-Band Downconverter Typical Performance 3 x LO Isolation vs. LO vs. IF 3 x LO Isolation vs. LO vs. IF LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 °C LO = 5.5 dBm, VGX = -1.1 V, USB, 25 °C 70 70 60 60 3 x LO Isolation (dB) 3 x LO Isolation (dB) IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V. Data taken with external IF hybrid. 50 40 1 GHz 2 GHz 3 GHz 4 GHz 30 20 10 50 40 20 10 0 0 6 8 10 12 LO Frequency (GHz) 14 16 6 10 12 LO Frequency (GHz) 14 Noise Figure vs. RF Noise Figure vs. RF IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB, 25 °C 6 6 5 5 4 3 2 16 4 3 2 1 1 0 0 17 19 21 23 RF Frequency (GHz) 25 17 27 Conversion Gain vs. IF vs. RF 19 21 23 RF Frequency (GHz) 25 27 Conversion Gain vs. IF vs. RF LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 °C LO = 5.5 dBm, VGX = -1.1 V, USB, 25 °C 20 20 Conversion Gain (dB) Conversion Gain (dB) 8 IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 °C Noise Figure (dB) Noise Figure (dB) 1 GHz 2 GHz 3 GHz 4 GHz 30 18 16 14 17 GHz 22 GHz 27 GHz 12 10 18 16 14 17 GHz 22 GHz 27 GHz 12 10 1 1.5 2 2.5 3 IF Frequency (GHz) Preliminary Data Sheet: Rev A 10/11/12 © 2012 TriQuint Semiconductor, Inc. 3.5 4 1 - 6 of 26 - 1.5 2 2.5 3 IF Frequency (GHz) 3.5 4 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC4610-SM K-Band Downconverter Typical Performance IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V. Data taken with external IF hybrid. Conversion Gain vs. RF vs. Temperature Conversion Gain vs. RF vs. Temperature IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB 20 Conversion Gain (dB) Conversion Gain (dB) 20 18 16 14 85 °C 25 °C -40 °C 12 18 16 14 85 °C 25 °C -40 °C 12 10 10 16 18 20 22 24 RF Frequency (GHz) 26 16 28 Image Rejection vs. RF vs. Temperature 26 28 IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB 40 35 Image Rejection (dB) 40 Image Rejection (dB) 20 22 24 RF Frequency (GHz) Image Rejection vs. RF vs. Temperature IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB 85 °C 25 °C -40 °C 30 25 20 15 10 85 °C 25 °C -40 °C 35 30 25 20 15 10 16 18 20 22 24 RF Frequency (GHz) 26 28 16 26 Input IP3 vs. RF vs. Temperature IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB 10 8 8 6 4 2 85 °C 25 °C -40 °C -2 20 22 24 RF Frequency (GHz) Input IP3 vs. RF vs. Temperature 10 0 18 IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB Input IP3 (dBm) Input IP3 (dBm) 18 6 4 2 85 °C 25 °C -40 °C 0 -2 -4 28 -4 16 18 20 22 24 RF Frequency (GHz) Preliminary Data Sheet: Rev A 10/11/12 © 2012 TriQuint Semiconductor, Inc. 26 28 16 - 7 of 26 - 18 20 22 24 RF Frequency (GHz) 26 28 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC4610-SM K-Band Downconverter Typical Performance IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V. Data taken with external IF hybrid. RF Isolation vs. RF vs. Temperature RF Isolation vs. RF vs. Temperature IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB 15 5 0 -5 -10 85 °C 25 °C -40 °C 10 RF Isolation (dB) 85 °C 25 °C -40 °C 10 RF Isolation (dB) 15 5 0 -5 -10 16 18 20 22 24 RF Frequency (GHz) 26 28 16 LO Isolation vs. LO vs. Temperature 60 60 LO Isolation (dB) LO Isolation (dB) 70 50 40 85 °C 25 °C -40°C 10 28 50 40 30 85 °C 25 °C -40°C 20 10 0 0 4 6 8 10 12 LO Frequency (GHz) 14 16 4 2 x LO Isolation vs. LO vs. Temperature 6 8 10 12 LO Frequency (GHz) 14 16 2 x LO Isolation vs. LO vs. Temperature IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB 70 60 2 x LO Isolation (dB) 70 2 x LO Isolation (dB) 26 IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB 70 20 20 22 24 RF Frequency (GHz) LO Isolation vs. LO vs. Temperature IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB 30 18 85 °C 25 °C -40°C 50 40 30 20 10 60 85 °C 25 °C -40°C 50 40 30 20 10 0 0 4 6 8 10 12 LO Frequency (GHz) Preliminary Data Sheet: Rev A 10/11/12 © 2012 TriQuint Semiconductor, Inc. 14 16 4 - 8 of 26 - 6 8 10 12 LO Frequency (GHz) 14 16 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC4610-SM K-Band Downconverter Typical Performance IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V. Data taken with external IF hybrid. 3 x LO Isolation vs. LO vs. Temperature 3 x LO Isolation vs. LO vs. Temperature IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB 70 70 60 60 LO Isolation (dB) LO Isolation (dB) IF = 1 GHz, LO = 2.0 dBm, VGX = -1.1 V, LSB 50 40 30 85 °C 25 °C -40 °C 20 50 40 30 85 °C 25 °C -40 °C 20 10 10 0 0 4 6 8 10 12 LO Frequency (GHz) 14 4 16 Noise Figure vs. RF vs. Temperature 8 10 12 LO Frequency (GHz) 14 16 Noise Figure vs. RF vs. Temperature IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB 6 6 5 5 85°C 25 °C -40 °C 4 Noise Figure (dB) Noise Figure (dB) 6 3 2 1 85°C 25 °C -40 °C 4 3 2 1 0 0 17 19 21 23 RF Frequency (GHz) Preliminary Data Sheet: Rev A 10/11/12 © 2012 TriQuint Semiconductor, Inc. 25 27 17 - 9 of 26 - 19 21 23 RF Frequency (GHz) 25 27 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC4610-SM K-Band Downconverter Typical Performance IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 55 to 82 mA, VGRF = -0.7 to -0.6 V. Data taken with external IF hybrid. Conversion Gain vs. RF vs. IDRF Conversion Gain vs. RF vs. IDRF IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 °C IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB, 25 °C 20 Conversion Gain (dB) Conversion Gain (dB) 20 18 16 14 55 mA 68 mA 82 mA 12 10 18 16 14 55 mA 68 mA 82 mA 12 10 16 18 20 22 24 RF Frequency (GHz) 26 28 16 Image Rejection vs. RF vs. IDRF 35 35 Image Rejection (dB) Image Rejection (dB) 40 55 mA 68 mA 82 mA 20 15 10 28 30 25 20 55 mA 68 mA 82 mA 15 10 16 18 20 22 24 RF Frequency (GHz) 26 28 16 8 708 6 606 50 4 40 2 30 0 20 -2 10 Isolation Input IP3 (dB) (dBm) 10 80 4 55 mA 68 mA 82 mA 0 -2 20 22 24 RF Frequency (GHz) 26 28 IF = 1Vcontrol GHz, LO==2 5.5 dBm, -1.1 V,25USB, V, LO = 0VGX dBm,=USB, °C 25 °C 10 2 18 Input IP3 vs. RF I to R Isolation vs. vs. LO IDRF vs. IF Input IP3 vs. RF vs. IDRF IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 °C Input IP3 (dBm) 26 IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB, 25 °C 40 25 20 22 24 RF Frequency (GHz) Image Rejection vs. RF vs. IDRF IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 °C 30 18 55 mA 68 mA 82 mA 1.0 GHz 2.0 GHz 3.0 GHz 3.5 GHz -4 0 -4 16 18 20 22 24 RF Frequency (GHz) Preliminary Data Sheet: Rev A 10/11/12 © 2012 TriQuint Semiconductor, Inc. 26 16 10 28 - 10 of 26 - 18 11 20 22 24 12 13 14 RF Frequency Frequency (GHz) (GHz) LO 26 15 28 16 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC4610-SM K-Band Downconverter Typical Performance IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 55 to 82 mA, VGRF = -0.7 to -0.6 V. Data taken with external IF hybrid. RF Isolation vs. RF vs. IDRF RF Isolation vs. RF vs. IDRF IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 °C IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB, 25 °C 15 55 mA 68 mA 82 mA 10 5 0 -5 5 0 -5 -10 -10 18 20 22 24 RF Frequency (GHz) 26 28 16 18 20 22 24 RF Frequency (GHz) 26 28 LO Isolation vs. LO vs. IDRF LO Isolation vs. LO vs. IDRF IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 °C IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB, 25 °C 70 70 60 60 LO Isolation (dB) LO Isolation (dB) 16 50 40 30 55 mA 68 mA 82 mA 20 10 50 40 55 mA 68 mA 82 mA 30 20 10 0 0 4 6 8 10 12 LO Frequency (GHz) 14 16 4 6 8 10 12 LO Frequency (GHz) 14 16 2 x1dB LOCompression Isolation vs. LO Input vs. RF Output Input 1dB Compression vs.vs. RFIDRF Output 2 x LO Isolation vs. LO vs. IDRF IF = 1Vcontrol GHz, LO===005.5 dBm, =USB, -1.1 USB, V, dBm, °C Vcontrol V,LO LO==66VGX dBm, USB,V,25 25 °C 25 °C IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 °C 70 15 15 Input Compression (dBm) Input 21dB 1dB Compression (dBm) x LO Isolation (dB) 70 2 x LO Isolation (dB) 55 mA 68 mA 82 mA 10 RF Isolation (dB) RF Isolation (dB) 15 60 50 55 mA 68 mA 82 mA 40 30 20 10 0 4 6 8 10 12 LO Frequency (GHz) Preliminary Data Sheet: Rev A 10/11/12 © 2012 TriQuint Semiconductor, Inc. 60 10 10 50 14 16 55 mA 68 mA 82 mA 40 55 30 1.0GHz GHz 1.0 2.0GHz GHz 2.0 3.0GHz GHz 3.0 3.5GHz GHz 3.5 20 00 10 -50 -5 4 10 10 - 11 of 26 - 6 11 11 8 10 12 12 13 14 12 13 14 LOFrequency Frequency(GHz) (GHz) RF (GHz) RF 14 15 15 16 16 16 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC4610-SM K-Band Downconverter Typical Performance 3 x LO Isolation vs. LO vs. IDRF 3 x LO Isolation vs. LO vs. IDRF IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 °C IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB, 25 °C 70 70 60 60 3 x LO Isolation (dB) 3 x LO Isolation (dB) IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 55 to 82 mA, VGRF = -0.7 to -0.6 V. Data taken with external IF hybrid. 50 40 55 mA 68 mA 82 mA 30 20 10 50 40 20 10 0 0 4 6 8 10 12 LO Frequency (GHz) 14 16 4 6 8 10 12 LO Frequency (GHz) 14 Noise Figure vs. RF vs. IDRF Noise Figure vs. RF vs. IDRF IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 °C IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB, 25 °C 6 16 6 5 5 55 mA 68 mA 82 mA 4 Noise Figure (dB) Noise Figure (dB) 55 mA 68 mA 82 mA 30 3 2 1 55 mA 68 mA 82 mA 4 3 2 1 0 0 17 19 21 23 RF Frequency (GHz) Preliminary Data Sheet: Rev A 10/11/12 © 2012 TriQuint Semiconductor, Inc. 25 27 17 - 12 of 26 - 19 21 23 RF Frequency (GHz) 25 27 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC4610-SM K-Band Downconverter Typical Performance IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V. Data taken with external IF hybrid. Conversion Gain vs. RF vs. VGX Conversion Gain vs. RF vs. VGX IF = 1 GHz, LO = 5.5 dBm, LSB, 25 °C IF = 1 GHz, LO = 5.5 dBm, USB, 25 °C 20 Conversion Gain (dB) Conversion Gain (dB) 20 18 16 14 1.1 V 1.2 V 12 18 16 14 1.1 V 1.2 V 12 10 10 16 18 20 22 24 RF Frequency (GHz) 26 28 16 Image Rejection vs. RF vs. VGX 40 35 35 Image Rejection (dB) Image Rejection (dB) 26 28 IF = 1 GHz, LO = 5.5 dBm, USB, 25 °C 40 1.1 V 1.2 V 25 20 15 10 30 25 20 1.1 V 1.2 V 15 10 16 18 20 22 24 RF Frequency (GHz) 26 28 16 18 20 22 24 RF Frequency (GHz) 26 Input IP3 vs. RF vs. VGX Input IP3 vs. RF vs. VGX IF = 1 GHz, LO = 5.5 dBm, LSB, 25 °C IF = 1 GHz, LO = 5.5 dBm, USB, 25 °C 10 10 8 8 Input IP3 (dBm) Input IP3 (dBm) 20 22 24 RF Frequency (GHz) Image Rejection vs. RF vs. VGX IF = 1 GHz, LO = 5.5 dBm, LSB, 25 °C 30 18 6 4 2 1.1 V 1.2 V 0 28 6 4 2 1.1 V 0 1.2 V -2 -2 -4 -4 16 18 20 22 24 RF Frequency (GHz) Preliminary Data Sheet: Rev A 10/11/12 © 2012 TriQuint Semiconductor, Inc. 26 16 28 - 13 of 26 - 18 20 22 24 RF Frequency (GHz) 26 28 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC4610-SM K-Band Downconverter Typical Performance IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V. Data taken with external IF hybrid. RF Isolation vs. RF vs. VGX RF Isolation vs. RF vs. VGX IF = 1 GHz, LO = 5.5 dBm, USB, 25 °C 15 15 10 10 RF Isolation (dB) RF Isolation (dB) IF = 1 GHz, LO = 5.5 dBm, LSB, 25 °C 5 0 1.1 V 1.2 V -5 5 0 1.1 V 1.2 V -5 -10 -10 16 18 20 22 24 RF Frequency (GHz) 26 28 16 LO Isolation vs. LO vs. VGX 70 60 60 LO Isolation (dB) LO Isolation (dB) 26 28 IF = 1 GHz, LO = 5.5 dBm, USB, 25 °C 70 50 40 1.1 V 1.2 V 20 10 50 40 1.1 V 1.2 V 30 20 10 0 0 4 6 8 10 12 LO Frequency (GHz) 14 16 4 2 x LO Isolation vs. LO vs. VGX 60 60 2 x LO Isolation (dB) 70 1.1 V 1.2 V 40 8 10 12 LO Frequency (GHz) 14 16 IF = 1 GHz, LO = 5.5 dBm, USB, 25 °C 70 50 6 2 x LO Isolation vs. LO vs. VGX IF = 1 GHz, LO = 5.5 dBm, LSB, 25 °C 2 x LO Isolation (dB) 20 22 24 RF Frequency (GHz) LO Isolation vs. LO vs. VGX IF = 1 GHz, LO = 5.5 dBm, LSB, 25 °C 30 18 30 20 10 0 50 1.1 V 1.2 V 40 30 20 10 0 4 6 8 10 12 LO Frequency (GHz) Preliminary Data Sheet: Rev A 10/11/12 © 2012 TriQuint Semiconductor, Inc. 14 16 4 - 14 of 26 - 6 8 10 12 LO Frequency (GHz) 14 16 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC4610-SM K-Band Downconverter Typical Performance IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V. Data taken with external IF hybrid. 3 x LO Isolation vs. LO vs. VGX 3 x LO Isolation vs. LO vs. VGX IF = 1 GHz, LO = 5.5 dBm, USB, 25 °C 70 70 60 60 3 x LO Isolation (dB) 3 x LO Isolation (dB) IF = 1 GHz, LO = 5.5 dBm, LSB, 25 °C 50 40 1.1 V 1.2 V 30 20 10 50 40 20 10 0 4 6 8 10 12 LO Frequency (GHz) 14 1.1 V 1.2 V 30 0 16 4 Noise Figure vs. RF vs. VGX 14 16 IF = 1 GHz, LO = 5.5 dBm, USB, 25 °C 6 6 5 5 Noise Figure (dB) Noise Figure (dB) 8 10 12 LO Frequency (GHz) Noise Figure vs. RF vs. VGX IF = 1 GHz, LO = 5.5 dBm, LSB, 25 °C 1.1 V 1.2 V 4 6 3 2 1 4 1.1 V 1.2 V 3 2 1 0 0 17 19 21 23 RF Frequency (GHz) Preliminary Data Sheet: Rev A 10/11/12 © 2012 TriQuint Semiconductor, Inc. 25 27 17 - 15 of 26 - 19 21 23 RF Frequency (GHz) 25 27 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC4610-SM K-Band Downconverter Typical Performance IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V. Data taken with external IF hybrid. Conversion Gain vs. RF vs. LO Conversion Gain vs. RF vs. LO IF = 1 GHz, VGX = -1.1 V, LSB, 25 °C IF = 1 GHz, VGX = -1.1 V, USB, 25 °C 20 Conversion Gain (dB) Conversion Gain (dB) 20 18 16 14 2.0 dBm 5.5 dBm 9.0 dBm 12 10 18 16 14 2.0 dBm 5.5 dBm 9.0 dBm 12 10 16 18 20 22 24 RF Frequency (GHz) 26 28 16 Image Rejection vs. RF vs. LO 26 28 IF = 1 GHz, VGX = 1.1 V, USB, 25 °C 40 35 Image Rejection (dB) 40 Image Rejection (dB) 20 22 24 RF Frequency (GHz) Image Rejection vs. RF vs. LO IF = 1 GHz, VGX = -1.1 V, LSB, 25 °C 2.0 dBm 5.5 dBm 9.0 dBm 30 25 20 15 10 35 30 25 20 2.0 dBm 5.5 dBm 9.0 dBm 15 10 16 18 20 22 24 RF Frequency (GHz) 26 28 16 26 Input IP3 vs. RF vs. LO IF = 1 GHz, VGX = 1.1 V, USB, 25 °C 10 8 8 6 4 2 2.0 dBm 5.5 dBm 9.0 dBm -2 20 22 24 RF Frequency (GHz) Input IP3 vs. RF vs. LO 10 0 18 IF = 1 GHz, VGX = -1.1 V, LSB, 25 °C Input IP3 (dBm) Input IP3 (dBm) 18 6 4 2 2.0 dBm 5.5 dBm 9.0 dBm 0 -2 -4 28 -4 16 18 20 22 24 RF Frequency (GHz) Preliminary Data Sheet: Rev A 10/11/12 © 2012 TriQuint Semiconductor, Inc. 26 28 16 - 16 of 26 - 18 20 22 24 RF Frequency (GHz) 26 28 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC4610-SM K-Band Downconverter Typical Performance IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V. Data taken with external IF hybrid. RF Isolation vs. RF vs. LO RF Isolation vs. RF vs. LO IF = 1 GHz, VGX = -1.1 V, USB, 25 °C IF = 1 GHz, VGX = -1.1 V, LSB, 25 °C 15 15 RF Isolation (dB) 10 5 0 5 0 -5 -5 -10 -10 16 18 20 22 24 RF Frequency (GHz) 26 16 28 LO Isolation vs. LO vs. LO 60 60 50 40 2.0 dBm 5.5 dBm 9.0 dBm 10 28 50 40 30 2.0 dBm 5.5 dBm 9.0 dBm 20 10 0 0 4 6 8 10 12 LO Frequency (GHz) 14 16 4 6 8 10 12 LO Frequency (GHz) 14 16 2 x LO Isolation vs. LO vs. LO 2 x LO Isolation vs. LO vs. LO IF = 1 GHz, VGX = -1.1 V, USB, 25 °C IF = 1 GHz, VGX = -1.1 V, LSB, 25 °C 70 70 60 60 2.0 dBm 5.5 dBm 9.0 dBm 50 40 LO Isolation (dB) LO Isolation (dB) 26 IF = 1 GHz, VGX = -1.1 V, USB, 25 °C 70 20 20 22 24 RF Frequency (GHz) LO Isolation vs. LO vs. LO 70 30 18 IF = 1 GHz, VGX = -1.1 V, LSB, 25 °C LO Isolation (dB) LO Isolation (dB) 2.0 dBm 5.5 dBm 9.0 dBm 10 RF Isolation (dB) 2.0 dBm 5.5 dBm 9.0 dBm 30 20 2.0 dBm 5.5 dBm 9.0 dBm 50 40 30 20 10 10 0 0 4 6 8 10 12 LO Frequency (GHz) Preliminary Data Sheet: Rev A 10/11/12 © 2012 TriQuint Semiconductor, Inc. 14 4 16 - 17 of 26 - 6 8 10 12 LO Frequency (GHz) 14 16 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC4610-SM K-Band Downconverter Typical Performance IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V. Data taken with external IF hybrid. 3 x LO Isolation vs. LO vs. LO 3 x LO Isolation vs. LO vs. LO IF = 1 GHz, VGX = -1.1 V, USB, 25 °C 80 80 70 70 60 60 LO Isolation (dB) LO Isolation (dB) IF = 1 GHz, VGX = -1.1 V, LSB, 25 °C 50 40 2.0 dBm 5.5 dBm 9.0 dBm 30 20 40 20 0 0 4 6 8 10 12 LO Frequency (GHz) 14 4 16 8 10 12 LO Frequency (GHz) 14 16 LO Isolation vs. LO Frequency LO Isolation vs. LO Frequency IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB, 25 °C 60 60 LO Isolation (dB) 70 50 40 30 20 1 x LO 2 x LO 3 x LO 10 50 40 30 20 1 x LO 2 x LO 3 x LO 10 0 0 4 6 IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 °C 70 6 8 10 12 LO Frequency (GHz) 14 4 16 6 8 10 12 LO Frequency (GHz) 14 LO Isolation vs. LO Frequency LO Isolation vs. LO Frequency IF = 2 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 °C IF = 2 GHz, LO = 5.5 dBm, VGX = 1.1 V, USB, 25 °C 70 70 60 60 LO Isolation (dB) LO Isolation (dB) 2.0 dBm 5.5 dBm 9.0 dBm 30 10 10 LO Isolation (dB) 50 50 40 30 20 1 x LO 2 x LO 3 x LO 10 50 40 30 20 1 x LO 2 x LO 3 x LO 10 0 16 0 4 6 8 10 12 LO Frequency (GHz) Preliminary Data Sheet: Rev A 10/11/12 © 2012 TriQuint Semiconductor, Inc. 14 16 4 - 18 of 26 - 6 8 10 12 LO Frequency (GHz) 14 16 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC4610-SM K-Band Downconverter Typical Performance LO Isolation vs. LO Frequency LO Isolation vs. LO Frequency IF = 3 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 °C IF = 3 GHz, LO = 5.5 dBm, VGX = 1.1 V, USB, 25 °C 70 70 60 60 LO Isolation (dB) LO Isolation (dB) IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V. Data taken with external IF hybrid. 50 40 30 20 1 x LO 2 x LO 3 x LO 10 40 30 20 1 x LO 2 x LO 3 x LO 10 0 0 4 6 8 10 12 LO Frequency (GHz) 14 16 4 6 8 10 12 LO Frequency (GHz) 14 16 LO Isolation vs. LO Frequency LO Isolation vs. LO Frequency IF = 4 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 °C IF = 4 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB, 25 °C 70 70 60 60 LO Isolation (dB) LO Isolation (dB) 50 50 40 30 20 1 x LO 2 x LO 3 x LO 10 50 40 30 20 1 x LO 2 x LO 3 x LO 10 0 0 4 6 8 10 12 LO Frequency (GHz) 14 16 4 6 8 10 12 LO Frequency (GHz) 14 16 M x N Spurious Outputs for USB IF = 2.0 GHz; RF = 17 - 27 GHz; LO = 7.5 - 12.5 GHz IF = 4.0 GHz; RF = 17 - 27 GHz; LO = 6.5 - 11.5 GHz RF/LO 0 1 2 3 RF/LO 0 1 2 3 -3 --- 49 52 51 -3 --- 47 50 --- -2 --- 56 57 63 -2 --- 53 56 56 -1 --- 28 0 26 -1 --- 30 0 32 0 --- 12 0 14 0 --- 10 -2 13 1 10 44 23 47 1 10 39 21 49 2 52 50 51 --- 2 51 51 51 --- Preliminary Data Sheet: Rev A 10/11/12 © 2012 TriQuint Semiconductor, Inc. - 19 of 26 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC4610-SM K-Band Downconverter Pin Description TOP VIEW Pin 1, 2, 4, 5, 6, 7, 8, 12, 14,15, 16, 20, 21, 22, 25, 26, 28 3 9 Symbol Description GND Internal Grounding; must be grounded on PCB. RF IN LO IN RF Input matched to 50 ohms, AC Coupled. LO Input, matched to 50 ohms, AC coupled. LO Drain Voltage. Bias network is required; see Application Circuit on page 21 as an example. LO Gate Voltage. Bias network is required; see Application Circuit on page 21 as an example. LO Drain Voltage. Bias network is required; see Application Circuit on page 21 as an example. IF Output matched to 50 ohms, DC coupled. No internal connection; should be left open. IF Output matched to 50 ohms, DC coupled. RF Drain Voltage for 4 V operation. Bias network is required; see Application Circuit on page 21 as an example. RF Drain Voltage. Bias network is required; see Application Circuit on page 21 as an example. RF Gate Voltage. Bias network is required; see Application Circuit on page 21 as an example. Backside Paddle. Multiple vias should be employed to minimize inductance and thermal resistance; see Mounting Configuration on page 24 for suggested footprint. 10 VDLO1 11 VGX 13 VDLO23 17 18 19 IF1 NC IF2 23 VDRF4V 24 VDRF 27 VGRF 29 GND Preliminary Data Sheet: Rev A 10/11/12 © 2012 TriQuint Semiconductor, Inc. - 20 of 26 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC4610-SM K-Band Downconverter Application Circuit VDRF4V VDRF VGRF 3 V Operation 3V VDRF VDLO1 VDLO23 VDRF4V Open 4610 YYWW XXXX RF Input IF Output LSB 4 V Operation 4V VDRF4V VDLO1 USB LO Input IF Output VDLO23 VDRF Open VGX VDLO1 VDLO23 Biasing Procedures Bias up Bias Down Set VGX to -1.1 V Set VDLO to 3 V Set VGRF to -1.5 V Set VDRF to 3 V Increase VGRF to get IDRF = 68 mA Apply RF signal Turn off RF signal Set VDRF to 0 V Set VDLO to 0 V Set VGRF to 0 V Set VGX to 0 V Preliminary Data Sheet: Rev A 10/11/12 © 2012 TriQuint Semiconductor, Inc. . - 21 of 26 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC4610-SM K-Band Downconverter Application Circuit PC Board Layout Board material is RO4003 0.008” thickness with ½ oz copper cladding. For further technical information, refer to the TGC4610-SM Product Information page. C13 C12 C14 C8 C7 C9 C1 C2 C3 R2 X1 U1 R1 C6 C5 C4 C11 C10 LSB Configuration C12 C18 R1 R4 C16 C17 X1 R3 R2 Bill of Material Ref Des Value Description Manufacturer C1 – C6 100 pF Cap, 0402, 50V, 5%, NPO various C7 – C12 0.01 µF Cap, 0603, 25V, 5%, COG various Part Number C13 – C18 1 µF Cap, 0805, 25V, 5%, X5R various R1 50 Ω Res, 0402, 0.05W, 0.1%, SMD various R2 – R4 0Ω Res, 0402, 0.01W, SMD various X1 Power Splitter Mini-Circuits QCN-19+ or QCN45+ U1 K-Band Downconverter TriQuint TGC4610-SM Note: For 4 V operation, R3 = 22 Ω and R4 = 8.2 Ω. Preliminary Data Sheet: Rev A 10/11/12 © 2012 TriQuint Semiconductor, Inc. - 22 of 26 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC4610-SM K-Band Downconverter Mechanical Information Package Information and Dimensions All dimensions are in millimeters. The TGC4610-SM will be marked with the “4610” designator and a lot code marked below the part designator. The “YY” represents the last two digits of the year the part was manufactured, the “WW” is the work week, and the “XXXX” is an auto-generated number. This package is lead-free/RoHS-compliant with a copper alloy base (CDA194), and the plating material on the leads is NiPdAu. It is compatible with lead-free (maximum 260 °C reflow temperature) soldering processes. Preliminary Data Sheet: Rev A 10/11/12 © 2012 TriQuint Semiconductor, Inc. - 23 of 26 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC4610-SM K-Band Downconverter Mechanical Information PCB Mounting Pattern All dimensions are in millimeters. Notes: 1. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm diameter drill and have a final plated thru diameter of .25 mm. Tape and Reel Information Tape and reel specifications for this part are also available on the TriQuint website in the “Application Notes” section. Standard T/R size = 500 pieces on a 13” reel. MATERIAL DISTANCE BETWEEN CENTERLINE (mm) CAVITY (mm) CARRIER TAPE (mm) COVER TAPE (mm) Vendor Vendor P/N Length (A0) Width (B0) Depth (K0) Pitch (P1) Length direction (P2) Width Direction (F) Width (W) Width (W) Advantek BCC5X5-B 5.25 5.25 1.8 8.0 2.00 5.50 12.0 9.20 Preliminary Data Sheet: Rev A 10/11/12 © 2012 TriQuint Semiconductor, Inc. - 24 of 26 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ® TGC4610-SM K-Band Downconverter Product Compliance Information ESD Information Solderability Compatible with lead-free free soldering processes, 260° maximum reflow temperature. temperature Package lead plating: NiPdAu ESD Rating: Value: Test: Standard: 1A Passes ≥ 250 V and < 500V 500V. Human Body Model (HBM) JEDEC Standard JESD22 JESD22-A114 The use of no-clean clean solder to avoid washing after soldering is recommended. This package is not compatible with solder containing lead. MSL Rating RoHS Compliance Moisture Sensitivity Level (MSL) MSL1 at 260°C convection reflow per JEDEC standard IPC/JEDEC JJ-STD-020. This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: • Lead Free • Halogen Free (Chlorine, Bromine) • Antimony Free • TBBP-A (C15H12Br402) Free • PFOS Free • SVHC Free Recommended Soldering Temperature Profile Preliminary Data Sheet: Rev A 10/11/12 © 2012 TriQuint Semiconductor, Inc. - 25 of 26 - Disclaimer: Subject to change without notice ® Connecting the Digital World to the Global Network TGC4610-SM K-Band Downconverter Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: [email protected] Tel: Fax: +1.972.994.8465 +1.972.994.8504 For technical questions and application information: Email: [email protected] Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Preliminary Data Sheet: Rev A 10/11/12 © 2012 TriQuint Semiconductor, Inc. - 26 of 26 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network ®