ST7400 N Channel Enhancement Mode MOSFET 2.8A DESCRIPTION ST7400 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. FEATURE PIN CONFIGURATION SOT-323 (SC-70) 3 D G S 1 2 1.Gate 2.Source 3.Drain 30V/2.8A, RDS(ON) = 77mΩ @VGS =10V 30V/2.5A, RDS(ON) = 85mΩ @VGS = 4.5V 30V/1.5A, RDS(ON) = 170mΩ @VGS = 2.5V Super high density cell design for Extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-323 (SC-70) package design PART MARKING SOT-323 3 00YW 1 Y: Year Code 2 A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST7400 2005. V1 ST7400 N Channel Enhancement Mode MOSFET 2.8A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±12 V ID 2.8 2.3 A IDM 10 A Continuous Source Current (Diode Conduction) IS 1.25 A TA=25℃ TA=70℃ PD 0.33 0.21 W TJ 150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 100 Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Operation Junction Temperature ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST7400 2005. V1 ST7400 N Channel Enhancement Mode MOSFET 2.8A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min V(BR)DSS VGS=0V,ID=250uA 30 VGS(th) VDS=VGS,ID=250uA 0.8 IGSS Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current V 1.6 V VDS=0V,VGS=±12V ±100 nA VDS=24V,VGS=0V 1 5 Zero Gate Voltage Drain Current IDSS VDS=24V,VGS=0V TJ=85℃ On-State Drain Current ID(on) VDS≦-5V,VGS=-4.5V Drain-source On-Resistance RDS(on) VGS=10V,ID=2.8A VGS=4.5V,ID=2.3A VGS=2.5V,ID=1.5A 62 70 95 Forward Transconductance gfs VDS=5V,ID=4.0V 4 Diode Forward Voltage VSD IS=1.0A,VGS=0V 0.8 4.0 uA A 77 85 110 mΩ S 1.2 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Turn-On Time td(on) Turn-Off Time Crss tr td(off) tf VDS=15V VGS=4.5V ID-2.0A VDS=15V VGS=0V F=1MHz VDS=15V ID=1A RL=15Ω RG=3Ω VGEN=10V 4.2 0.6 nC 1.5 380 55 40 pF 2.5 2.5 nS 20 5 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST7400 2005. V1 ST7400 N Channel Enhancement Mode MOSFET 2.8A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST7400 2005. V1 ST7400 N Channel Enhancement Mode MOSFET 2.8A YPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST7400 2005. V1 ST7400 N Channel Enhancement Mode MOSFET 2.8A YPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST7400 2005. V1 ST7400 N Channel Enhancement Mode MOSFET 2.8A SOT-323 PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST7400 2005. V1 ST7400 N Channel Enhancement Mode MOSFET 2.8A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST7400 2005. V1