ST9435A P Channel Enhancement Mode MOSFET - 5.6A DESCRIPTION ST9435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as battery pack, notebook computer power management, and other battery powered circuits. PIN CONFIGURATION SOP-8 FEATURE z z z z z z -30V/-5.6A, RDS(ON) = 57mΩ (Typ.) @VGS = -10V -30V/-5.0A, RDS(ON) = 72mΩ @VGS = -6.0V -30V/-4.4A, RDS(ON) = 95mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 ORDERING INFORMATION Part Number Package Part Marking ST9435AS8RG SOP-8P ST9435A ST9435AS8TG SOP-8P ST9435A ※ Process Code : A ~ Z ; a ~ z ※ ST9435AS8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free ※ ST9435AS8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. ST9435A 2007. V1 ST9435A P Channel Enhancement Mode MOSFET - 5.6A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V ID -6.5 -4.6 A IDM -30 A IS -2.3 A PD 2.5 1.6 W TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 70 ℃/W Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. ST9435A 2007. V1 ST9435A P Channel Enhancement Mode MOSFET - 5.6A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min V(BR)DSS VGS=0V,ID=-250uA -30 VGS(th) VDS=VGS,ID=250uA -1.0 IGSS Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current V -3.0 V VDS=0V,VGS=±20V ±100 nA VDS=-24V,VGS=0V -1 -5 Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V TJ=85℃ On-State Drain Current ID(on) VDS=-5V,VGS=-4.5V Drain-source OnResistance RDS(on) VGS=-10V,ID=-5.6A VGS=-6.0V,ID=-5.0A VGS=-4.5V,ID=-4.4A 0.057 0.072 0.095 Ω Forward Transconductance gfs VDS=-15V,ID=-5.7V 13 S Diode Forward Voltage VSD IS=-2.3A,VGS=0V -0.8 -1.2 16 24 -10 uA A V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-15V,VGS=-10V ID≡-3.5A 2.3 nC 4.5 Input Capacitance Ciss Output Capacitance Coss Reverse TransferCapacitance Crss 75 Turn-On Time td(on) tr 14 25 16 26 Turn-Off Time td(off) tf 43 70 30 52 680 VDS ==-15V,VGS=0V f=1MHz VDD=-15V,RL=15Ω ID=-1A,VGEN=-10V RG=6Ω 120 pF nS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. ST9435A 2007. V1 ST9435A P Channel Enhancement Mode MOSFET - 5.6A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. ST9435A 2007. V1 ST9435A P Channel Enhancement Mode MOSFET - 5.6A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. ST9435A 2007. V1 ST9435A P Channel Enhancement Mode MOSFET - 5.6A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. ST9435A 2007. V1 ST9435A P Channel Enhancement Mode MOSFET - 5.6A PACKAGE OUTLINE SOP-8P STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. ST9435A 2007. V1