5 STN633 STN6335 Dual N Channel Enhancement Mode MOSFET 0.95A DESCRIPTION STN6335 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer circuits where high-side switching, low in-line power loss and resistance to transients are needed. PIN CONFIGURATION SOT-363 / SC70-6L D1 G2 S2 FEATURE � � � � � 35YW S1 G � 20V/0.95A, RDS(ON) = 380mΩ@VGS =4.5V 20V/0.75A, RDS(ON) =450mΩ@VGS =2.5V 20V/0.65A, RDS(ON) =800mΩ@VGS =1.8V Super high density cell design for extremely low RDS(ON) Exceptional low on-resistance and maximum DC current capability SOT-363 / SC70-6L package design D2 Y: Year A: Process Code ORDERING INFORMATION Part Number Package Part Marking STN6335 SOT-363 / SC70-6L YA ※ Process Code : A ~ Z(1~26) ; a ~ z(27~52) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN6335 2008. V1 5 STN633 STN6335 Dual N Channel Enhancement Mode MOSFET 0.95A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V 1.2 A TA=25℃ Continuous Drain Current (TJ=150℃) ID TA=80℃ Pulsed Drain Current 0.9 IDM 4 A Continuous Source Current (Diode Conduction) IS 0.6 A Power Dissipation PD 0.35 W TA=25℃ TA=70℃ Operation Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient T≦10sec Steady State 0.19 TJ -55/150 ℃ TSTG -55/150 ℃ RθJA 360 ℃/W 400 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN6335 2008. V1 5 STN633 STN6335 Dual N Channel Enhancement Mode MOSFET 0.95A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-source On-Resistance Forward Transconductance RDS(on) gfs Diode Forward Voltage VSD DYNAMIC Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss Turn-On Time Turn-Off Time Td(on) tr Td(off) tf 20 V 1.0 V VDS=0V,VGS=±12V ±100 nA VDS=20V,VGS=0V 1 VDS=20V,VGS=0V TJ=55℃ 5 VDS≦4.5V,VGS=5V 0.35 2 A VGS=4.5V,ID=0.95A 260 380 VGS=2.5V,ID=0.75A 320 450 VGS=1.8V,ID=0.65A 420 800 VDS=10V,ID=1.2A 2.6 IS=0.5A,VGS=0V 0.8 1.2 1.2 1.5 VDS=10V,VGS=4.5V,VDS=0.7A uA mΩ S V nC 0.2 0.3 VDS=10V,VGS=0V f=1MHz VDD=10V, RL=10Ω, ID=1.0A, VGEN=4.5V, RG=6Ω 110 34 16 5 8 10 1.2 pF 10 15 18 2.8 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN6335 2008. V1 nS 5 STN633 STN6335 Dual N Channel Enhancement Mode MOSFET 0.95A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN6335 2008. V1 5 STN633 STN6335 Dual N Channel Enhancement Mode MOSFET 0.95A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN6335 2008. V1 5 STN633 STN6335 Dual N Channel Enhancement Mode MOSFET 0.95A SOT363 (sc70-6L) PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN6335 2008. V1