SQD07N25-350H Automotive Dual N-Channel 250 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) 250 RDS(on) () at VGS = 10 V 0.350 ID (A) FEATURES 7 Configuration • TrenchFET® Power MOSFET Single • Package with Low Thermal Resistance D TO-252 • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see G Drain Connected to Tab G D S S Top View N-Channel MOSFET ORDERING INFORMATION Package TO-252 Lead (Pb)-free and Halogen-free SQD07N25-350H-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 250 Gate-Source Voltage VGS ± 30 Continuous Drain Current TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 7 4 IS 50 IDM 15 IAS 7 EAS 2.4 PD UNIT 71 23 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 50 RthJC 2.1 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. 1/9 www.freescale.net.cn SQD07N25-350H Automotive Dual N-Channel 250 V (D-S) 175 °C MOSFET SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = 250 μA 250 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5 VDS = 0 V, VGS = ± 30 V UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductanceb IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 250 V - - 1 VGS = 0 V VDS = 250 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 250 V, TJ = 175 °C - - 250 VGS = 10 V VDS5 V 10 - - VGS = 10 V ID = 10 A - 0.290 0.350 VGS = 10 V ID = 10 A, TJ = 125 °C - - 0.858 VGS = 10 V ID = 10 A, TJ = 175 °C VDS = 15 V, ID = 10 A - - 1.250 - 20 - V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Qgs Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec - 964 1205 - 88 110 Crss - 32 40 Qg - 19 29 - 6.5 - VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 125 V, ID = 10 A Qgd Rg - 5 - f = 1 MHz 0.98 1.97 3.00 - 9 14 VDD = 125 V, RL = 12.5 ID 10 A, VGEN = 10 V, Rg = 1 - 8 12 - 15 23 - 4 6 td(on) tr td(off) tf pF nC ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 20 A, VGS = 0 V - - 15 A - 0.9 1.5 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2/9 www.freescale.net.cn SQD07N25-350H Automotive Dual N-Channel 250 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 20 15 VGS = 10 V thru 6 V 12 ID - Drain Current (A) ID - Drain Current (A) 16 VGS = 5 V 12 8 4 9 TC = 25 °C 6 3 TC = 125 °C VGS = 4 V 0 0 0 3 6 9 12 15 0 2 1.5 35 1.2 28 0.9 TC = 25 °C 0.3 TC = 125 °C 6 8 10 Transfer Characteristics gfs - Transconductance (S) ID - Drain Current (A) Output Characteristics 0.6 4 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) TC = - 55 °C TC = 25 °C 21 14 TC = 125 °C 7 TC = - 55 °C 0 0.0 0 2 4 6 8 0 10 3 6 9 12 15 80 100 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) Transfer Characteristics Transconductance 1.0 1500 0.8 1200 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) TC = - 55 °C 0.6 VGS = 10 V 0.4 0.2 Ciss 900 600 Crss 300 Coss 0.0 0 4 8 12 ID - Drain Current (A) On-Resistance vs. Drain Current 3/9 16 20 0 0 20 40 60 VDS - Drain-to-Source Voltage (V) Capacitance www.freescale.net.cn SQD07N25-350H Automotive Dual N-Channel 250 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 3.6 VDS = 125 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 17 A 3.0 ID = 10 A 8 6 4 2 2.4 1.8 VGS = 10 V 1.2 0.6 0 0 4 8 12 16 0.0 - 50 - 25 20 0 Qg - Total Gate Charge (nC) 50 75 100 125 150 175 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 100 0.7 10 0.2 VGS(th) Variance (V) TJ = 150 °C 1 TJ = 25 °C 0.1 - 0.3 ID = 5 mA - 0.8 ID = 250 μA - 1.3 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 - 1.8 - 50 - 25 1.2 0 VSD - Source-to-Drain Voltage (V) 25 50 75 100 125 150 TJ - Temperature (°C) Source Drain Diode Forward Voltage Threshold Voltage 320 VDS - Drain-to-Source Voltage (V) IS - Source Current (A) 25 306 ID = 10 mA 292 278 264 250 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature 4/9 www.freescale.net.cn 175 SQD07N25-350H Automotive Dual N-Channel 250 V (D-S) 175 °C MOSFET THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 IDM Limited ID - Drain Current (A) 10 100 μs Limited by RDS(on)* 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 0.1 0.01 BVDSS Limited TC = 25 °C Single Pulse 0.001 0.01 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 5/9 www.freescale.net.cn 1000 SQD07N25-350H Automotive Dual N-Channel 250 V (D-S) 175 °C MOSFET THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. 6/9 www.freescale.net.cn SQD07N25-350H Automotive Dual N-Channel 250 V (D-S) 175 °C MOSFET TO-252AA CASE OUTLINE E A MILLIMETERS C1 e b1 D1 e1 E1 L gage plane height (0.5 mm) L1 b L3 H D L2 b2 C A2 A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 A2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.10 4.45 0.161 0.175 E 6.48 6.73 0.255 0.265 E1 4.49 5.50 0.177 0.217 e e1 2.28 BSC 4.57 BSC 0.090 BSC 0.180 BSC H 9.65 10.41 0.380 L 1.40 1.78 0.055 0.070 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 1.15 1.52 0.040 0.060 ECN: T11-0110-Rev. L, 18-Apr-11 DWG: 5347 Note • Dimension L3 is for reference only. 7/9 www.freescale.net.cn 0.410 SQD07N25-350H Automotive Dual N-Channel 250 V (D-S) 175 °C MOSFET RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index 8/9 Return to Index www.freescale.net.cn SQD07N25-350H Automotive Dual N-Channel 250 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain type s of applications are based on freestyle’s knowledge of typical requirements that are often placed on freestyle products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsib ility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify freestyle’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, freestyle products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the freestyle product could result in personal injury or death. Customers using or selling freestyle products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold freestyle and its distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vis hay Material Category Policy freestyle Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwis e specified as non-compliant. Please note that some freestyle documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002 /95/EC conform to Directive 2011/65/EU. 9/9 www.freescale.net.cn