CHENDA FM1100

FM120 THRU FM1200
1.0A Surface Mount Schottky Barrier
Rectifiers - 20V-200V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SMA-F
• Low profile surface mounted application in order to
optimize board space.
0.196(4.9)
0.180(4.5)
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.012(0.3) Typ.
0.106(2.7)
0.091(2.3)
MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free parts, ex. FM120-H.
Mechanical data
0.068(1.7)
0.060(1.5)
0.032(0.8) Typ.
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, DO-214AC / SMA-F
• Terminals : Solder plated, solderable per
0.032 (0.8) Typ.
Dimensions in inches and (millimeters)
MIL-STD-750, Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.05 gram
Maximum ratings and Electrical Characteristics (AT
PARAMETER
T A=25 oC unless otherwise noted)
CONDITIONS
Forward rectified current
See Fig.1
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V R = V RRM T J = 25 OC
Reverse current
O
V R = V RRM T J = 100 C
Diode junction capacitance
f=1MHz and applied 4V DC reverse voltage
Storage temperature
V RMS*2
(V)
*3
VR
(V)
FM120
20
14
20
FM130
30
21
30
FM140
40
28
40
FM150
50
35
50
*4
VF
(V)
Operating
temperature
T J, ( OC)
0.50
-55 to +125
MIN.
TYP.
MAX.
UNIT
IO
1.0
A
I FSM
30
A
0.5
IR
10
CJ
T STG
*1
V RRM
(V)
SYMBOLS
SYMBOL
pF
120
-65
mA
+175
O
C
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
0.70
FM160
60
42
60
FM180
80
56
80
FM1100
100
70
100
FM1150
150
105
150
0.90
FM1200
200
140
200
0.92
*4 Maximum forward voltage@I F=1.0A
0.85
-55 to +150
MDD ELECTRONIC
Rating and characteristic curves (FM120 THRU FM1200)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
FIG.2-TYPICAL FORWARD
50
FM
0.6
15
0
00
14
12
FM
FM
0~
0~
12
0.4
0.2
0
0
20
40
60
80
100
120
140
160
180
200
LEAD TEMPERATURE,(°C)
PEAK FORWARD SURGE CURRENT,(A)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
10
FM
12
FM
0~
FM
15
0~
14
FM
0
16
0
0.8
INSTANTANEOUS FORWARD CURRENT,(A)
1.0
FM
AVERAGE FORWARD CURRENT,(A)
CHARACTERISTICS
1.2
3.0
0
0
11
M
~F
00
12
0
18
M
FM
F
0~
5
11
1.0
FM
TJ=25 C
Pulse Width 300us
1% Duty Cycle
0.1
8.3ms Single Half
TJ=25 C
Sine Wave
.01
JEDEC method
.1
.3
.5
.7
.9
1.1
1.3
1.5
FORWARD VOLTAGE,(V)
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
100
NUMBER OF CYCLES AT 60Hz
REVERSE LEAKAGE CURRENT, (mA)
FIG.4-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,(pF)
350
300
250
200
150
100
10
1.0
TJ=75 C
.1
TJ=25 C
50
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
.01
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
MDD ELECTRONIC
FM120 THRU FM1200
Pinning information
Pin
Pin1
Pin2
Simplified outline
cathode
anode
Symbol
1
2
Marking
Type number
Marking code
FM120
FM130
FM140
FM150
FM160
FM180
FM1100
FM1150
FM1200
SS12
SS13
SS14
SS15
SS16
SS18
S110
S115
S120
Suggested solder pad layout
C
A
B
Dimensions in inches and (millimeters)
PACKAGE
A
B
C
SMA
0.110 (2.80)
0.063 (1.60)
0.087 (2.20)
MDD ELECTRONIC
1
2
FM120 THRU FM1200
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Temperature
Tsmin
tS
Preheat
Ramp-down
25
o
t25 C to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(T L to T P )
o
<3 C /sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
150 oC
200 oC
60~120sec
Tsmax to T L
-Ramp-upRate
<3 oC/sec
Time maintained above:
-Temperature(T L )
-Time(t L )
Peak Temperature(T P )
217 oC
60~260sec
255 oC-0/+5 oC
Time within 5 oC of actual Peak
Temperature(t P )
10~30sec
Ramp-down Rate
<6 oC/sec
Time 25 oC to Peak Temperature
<6minutes
MDD ELECTRONIC
FM120 THRU FM1200
High reliability test capabilities
Item Test
Conditions
O
Reference
1. Solder Resistance
at 260 ± 5 C for 10 ± 2sec.
immerse body into solder 1/16"±1/32"
MIL-STD-750D
METHOD-2031
2. Solderability
at 245±5 OC for 5 sec.
MIL-STD-202F
METHOD-208
3. High Temperature Reverse Bias
V R=80% rate at T J=125 OC for 168 hrs.
MIL-STD-750D
METHOD-1038
4. Forward Operation Life
Rated average rectifier current at T A=25 OC for 500hrs.
MIL-STD-750D
METHOD-1027
T A = 25 OC, I F = I O
On state: power on for 5 min.
off state: power off for 5 min.
on and off for 500 cycles.
MIL-STD-750D
METHOD-1036
5. Intermittent Operation Life
6. Pressure Cooker
15P SIG at T A=121 OC for 4 hrs.
JESD22-A102
7. Temperature Cycling
-55 OC to +125 OC dwelled for 30 min.
and transferred for 5min. total 10 cycles.
8. Thermal Shock
0 OC for 5 min. rise to 100 OC for 5 min. total 10 cycles.
MIL-STD-750D
METHOD-1056
9. Forward Surge
8.3ms single half sine-wave superimposed
on rated load, one surge.
MIL-STD-750D
METHOD-4066-2
10. Humidity
at T A=85 OC, RH=85% for 1000hrs.
MIL-STD-750D
METHOD-1021
11. High Temperature Storage Life
at 175 OC for 1000 hrs.
MIL-STD-750D
METHOD-1031
MDD ELECTRONIC
MIL-STD-750D
METHOD-1051