FM120 THRU FM1200 1.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SMA-F • Low profile surface mounted application in order to optimize board space. 0.196(4.9) 0.180(4.5) • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.012(0.3) Typ. 0.106(2.7) 0.091(2.3) MIL-STD-19500 /228 • Suffix "-H" indicates Halogen-free parts, ex. FM120-H. Mechanical data 0.068(1.7) 0.060(1.5) 0.032(0.8) Typ. • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, DO-214AC / SMA-F • Terminals : Solder plated, solderable per 0.032 (0.8) Typ. Dimensions in inches and (millimeters) MIL-STD-750, Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.05 gram Maximum ratings and Electrical Characteristics (AT PARAMETER T A=25 oC unless otherwise noted) CONDITIONS Forward rectified current See Fig.1 Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) V R = V RRM T J = 25 OC Reverse current O V R = V RRM T J = 100 C Diode junction capacitance f=1MHz and applied 4V DC reverse voltage Storage temperature V RMS*2 (V) *3 VR (V) FM120 20 14 20 FM130 30 21 30 FM140 40 28 40 FM150 50 35 50 *4 VF (V) Operating temperature T J, ( OC) 0.50 -55 to +125 MIN. TYP. MAX. UNIT IO 1.0 A I FSM 30 A 0.5 IR 10 CJ T STG *1 V RRM (V) SYMBOLS SYMBOL pF 120 -65 mA +175 O C *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage 0.70 FM160 60 42 60 FM180 80 56 80 FM1100 100 70 100 FM1150 150 105 150 0.90 FM1200 200 140 200 0.92 *4 Maximum forward voltage@I F=1.0A 0.85 -55 to +150 MDD ELECTRONIC Rating and characteristic curves (FM120 THRU FM1200) FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE FIG.2-TYPICAL FORWARD 50 FM 0.6 15 0 00 14 12 FM FM 0~ 0~ 12 0.4 0.2 0 0 20 40 60 80 100 120 140 160 180 200 LEAD TEMPERATURE,(°C) PEAK FORWARD SURGE CURRENT,(A) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 10 FM 12 FM 0~ FM 15 0~ 14 FM 0 16 0 0.8 INSTANTANEOUS FORWARD CURRENT,(A) 1.0 FM AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 1.2 3.0 0 0 11 M ~F 00 12 0 18 M FM F 0~ 5 11 1.0 FM TJ=25 C Pulse Width 300us 1% Duty Cycle 0.1 8.3ms Single Half TJ=25 C Sine Wave .01 JEDEC method .1 .3 .5 .7 .9 1.1 1.3 1.5 FORWARD VOLTAGE,(V) FIG.5 - TYPICAL REVERSE CHARACTERISTICS 100 NUMBER OF CYCLES AT 60Hz REVERSE LEAKAGE CURRENT, (mA) FIG.4-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,(pF) 350 300 250 200 150 100 10 1.0 TJ=75 C .1 TJ=25 C 50 0 .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) MDD ELECTRONIC FM120 THRU FM1200 Pinning information Pin Pin1 Pin2 Simplified outline cathode anode Symbol 1 2 Marking Type number Marking code FM120 FM130 FM140 FM150 FM160 FM180 FM1100 FM1150 FM1200 SS12 SS13 SS14 SS15 SS16 SS18 S110 S115 S120 Suggested solder pad layout C A B Dimensions in inches and (millimeters) PACKAGE A B C SMA 0.110 (2.80) 0.063 (1.60) 0.087 (2.20) MDD ELECTRONIC 1 2 FM120 THRU FM1200 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 o t25 C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o <3 C /sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) 150 oC 200 oC 60~120sec Tsmax to T L -Ramp-upRate <3 oC/sec Time maintained above: -Temperature(T L ) -Time(t L ) Peak Temperature(T P ) 217 oC 60~260sec 255 oC-0/+5 oC Time within 5 oC of actual Peak Temperature(t P ) 10~30sec Ramp-down Rate <6 oC/sec Time 25 oC to Peak Temperature <6minutes MDD ELECTRONIC FM120 THRU FM1200 High reliability test capabilities Item Test Conditions O Reference 1. Solder Resistance at 260 ± 5 C for 10 ± 2sec. immerse body into solder 1/16"±1/32" MIL-STD-750D METHOD-2031 2. Solderability at 245±5 OC for 5 sec. MIL-STD-202F METHOD-208 3. High Temperature Reverse Bias V R=80% rate at T J=125 OC for 168 hrs. MIL-STD-750D METHOD-1038 4. Forward Operation Life Rated average rectifier current at T A=25 OC for 500hrs. MIL-STD-750D METHOD-1027 T A = 25 OC, I F = I O On state: power on for 5 min. off state: power off for 5 min. on and off for 500 cycles. MIL-STD-750D METHOD-1036 5. Intermittent Operation Life 6. Pressure Cooker 15P SIG at T A=121 OC for 4 hrs. JESD22-A102 7. Temperature Cycling -55 OC to +125 OC dwelled for 30 min. and transferred for 5min. total 10 cycles. 8. Thermal Shock 0 OC for 5 min. rise to 100 OC for 5 min. total 10 cycles. MIL-STD-750D METHOD-1056 9. Forward Surge 8.3ms single half sine-wave superimposed on rated load, one surge. MIL-STD-750D METHOD-4066-2 10. Humidity at T A=85 OC, RH=85% for 1000hrs. MIL-STD-750D METHOD-1021 11. High Temperature Storage Life at 175 OC for 1000 hrs. MIL-STD-750D METHOD-1031 MDD ELECTRONIC MIL-STD-750D METHOD-1051