IRFH4251DPbF HEXFET® Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max (@VGS = 4.5V) 4.60 1.10 m Qg (typical) 10 44 nC ID (@TC = 25°C) 45 45 A Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Control and synchronous MOSFETs in one package Low charge control MOSFET (10nC typical) Low RDSON synchronous MOSFET (<1.10m) Intrinsic Schottky Diode with Low Forward Voltage on Q2 RoHS Compliant, Halogen-Free MSL2, Industrial Qualification Base part number Package Type IRFH4251DPbF Dual PQFN 5mm x 6mm Benefits Increased power density Lower switching losses results in Lower conduction losses Lower Switching Losses Environmentally friendlier Increased reliability Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFH4251DTRPbF Absolute Maximum Ratings IDM Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V (Source Bonding Technology Limited) Pulsed Drain Current PD @TC = 25°C PD @TC = 70°C Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range VGS ID @ TC = 25°C ID @ TC = 70°C ID @ TC = 25°C Q1 Max. Q2 Max. ± 20 64 188 51 151 Parameter RJC (Bottom) Junction-to-Case Junction-to-Case RJC (Top) Junction-to-Ambient RJA Junction-to-Ambient RJA (<10s) Units V A 45 45 120 750 31 20 63 40 W 0.25 0.50 W/°C °C -55 to + 150 Thermal Resistance Q1 Max. 4.0 20 34 Q2 Max. 2.0 12 35 24 22 Units °C/W Notes through are on page 12 1 www.irf.com © 2013 International Rectifier June 10, 2013 IRFH4251DPbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage VGS(th)/TJ Gate Threshold Voltage Coefficient IDSS Drain-to-Source Leakage Current IGSS gfs Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Qg Total Gate Charge Qgs1 Pre-Vth Gate-to-Source Charge Qgs2 Post-Vth Gate-to-Source Charge Qgd Gate-to-Drain Charge Qgodr Gate Charge Overdrive Qsw Switch Charge (Qgs2 + Qgd) Qoss Output Charge RG Gate Resistance td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 2 www.irf.com Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1/Q2 Q1/Q2 Q1/Q2 Q1/Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 © 2013 International Rectifier Min. Typ. 25 ––– 25 ––– ––– 22 ––– 20 ––– 2.50 ––– 0.60 ––– 3.70 ––– 0.85 1.1 1.6 1.1 1.6 ––– -5.7 ––– -10 ––– ––– ––– ––– ––– ––– ––– ––– 131 ––– 161 ––– ––– 10 ––– 44 ––– 2.5 ––– 11 ––– 1.6 ––– 4.2 ––– 3.8 ––– 15 ––– 2.1 ––– 13.8 ––– 5.4 ––– 19.2 ––– 10 ––– 44 ––– 2.4 ––– 0.85 ––– 10 ––– 24 ––– 61 ––– 105 ––– 13 ––– 35 ––– 15 ––– 60 ––– 1314 ––– 5845 ––– 365 ––– 1703 ––– 92 ––– 408 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– VGS = 0V, ID = 1.0mA ––– mV/°C Reference to 25°C, ID = 1.0mA ––– Reference to 25°C, ID = 10mA 3.20 VGS = 10V, ID = 30A 0.85 m VGS = 10V, ID = 30A 4.60 VGS = 4.5V, ID = 30A 1.10 VGS = 4.5V, ID = 30A 2.1 V Q1: VDS = VGS, ID = 35µA 2.1 Q2: VDS = VGS, ID = 150µA ––– mV/°C Q1: VDS = VGS, ID = 35µA ––– Q2: VDS = VGS, ID = 150µA 1.0 µA VDS = 20V, VGS = 0V 250 VDS = 20V, VGS = 0V 100 nA VGS = 20V -100 VGS = -20V ––– S VDS = 10V, ID = 30A ––– VDS = 10V, ID = 30A 15 66 Q1 ––– VDS = 13V ––– V ––– GS = 4.5V, ID = 30A nC ––– Q2 ––– VDS = 13V ––– V ––– GS = 4.5V, ID = 30A ––– ––– ––– ––– nC VDS = 16V, VGS = 0V ––– ––– ––– ––– Q1 VDS = 13V VGS = 4.5V ––– ––– ID = 30A, Rg = 1.8 ns ––– Q2 ––– VDS = 13V VGS = 4.5V ––– ––– ID = 30A, Rg = 1.8 ––– ––– VGS = 0V ––– pF VDS = 13V ––– ƒ = 1.0MHz ––– ––– ––– June 10, 2013 IRFH4251DPbF Avalanche Characteristics EAS IAR Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 3 Typ. ––– ––– Parameter Single Pulse Avalanche Energy Avalanche Current www.irf.com © 2013 International Rectifier Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Q1 Max. 61 30 Typ. ––– ––– ––– ––– ––– ––– 16 36 13 67 Q2 Max. 1292 60 Units mJ A Max. Units Conditions 45 A MOSFET symbol 45 showing the 120 A integral reverse p-n junction diode. 750 1.0 V TJ = 25°C, IS = 30A, VGS = 0V 0.75 TJ = 25°C, IS = 30A, VGS = 0V ––– ns Q1 TJ = 25°C, IF = 30A ––– VDD = 13V, di/dt = 235A/µs ––– nC Q2 TJ = 25°C, IF = 30A VDD = 13V, di/dt = 190A/µs ––– June 10, 2013 IRFH4251DPbF Q2 - Synchronous FET Q1 - Control FET 1000 1000 100 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.1V 2.9V 2.7V 2.5V 10 1 TOP 100 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP BOTTOM 10 1 2.3V 0.1 60µs PULSE WIDTH 60µs PULSE WIDTH 2.5V Tj = 25°C Tj = 25°C 0.1 0.01 0.1 1 10 100 0.1 1 V DS, Drain-to-Source Voltage (V) 1000 100 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.1V 2.9V 2.7V 2.5V 10 2.5V TOP ID, Drain-to-Source Current (A) TOP ID, Drain-to-Source Current (A) 100 Fig 2. Typical Output Characteristics 1000 100 BOTTOM 2.3V 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 150°C 1 1 0.1 1 VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 10 Tj = 150°C 10 0.1 100 1 10 100 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics Fig 4. Typical Output Characteristics 1000 ID, Drain-to-Source Current (A) 1000 ID, Drain-to-Source Current (A) 10 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 T J = 150°C 10 T J = 25°C 1 VDS = 15V 60µs PULSE WIDTH 100 T J = 150°C 10 T J = 25°C 1 VDS = 15V 60µs PULSE WIDTH 0.1 0.1 1.5 2.0 2.5 3.0 3.5 4.0 VGS, Gate-to-Source Voltage (V) Fig 5. Typical Transfer Characteristics 4 VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V www.irf.com © 2013 International Rectifier 1.5 2.0 2.5 3.0 3.5 4.0 VGS, Gate-to-Source Voltage (V) Fig 6. Typical Transfer Characteristics June 10, 2013 IRFH4251DPbF Q2 - Synchronous FET Q1 - Control FET 100000 100000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd Crss = C gd Coss = Cds + Cgd C oss = C ds + C gd C, Capacitance (pF) C, Capacitance (pF) 10000 Ciss Coss 1000 Crss 100 10000 Ciss Coss 1000 Crss 10 100 1 10 100 1 10 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Capacitance vs. Drain-to-Source Voltage 14.0 14.0 ID= 30A 12.0 VDS= 20V VDS= 13V 10.0 12.0 VGS, Gate-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) ID= 30A 8.0 6.0 4.0 2.0 VDS= 20V VDS= 13V 10.0 8.0 6.0 4.0 2.0 0.0 0.0 0 5 10 15 20 25 30 0 20 QG, Total Gate Charge (nC) 10000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100µsec Limited by package 1msec 1 10msec 0.1 Tc = 25°C Tj = 150°C Single Pulse DC 0.01 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 11. Maximum Safe Operating Area 5 www.irf.com 60 80 100 120 Fig 10. Typical Gate Charge vs. Gate-to-Source Voltage © 2013 International Rectifier ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 1000 40 QG, Total Gate Charge (nC) Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage 10 100 VDS, Drain-to-Source Voltage (V) OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100µsec 100 10 Limited by package 1msec 1 0.1 10msec Tc = 25°C Tj = 150°C Single Pulse DC 0.01 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 12. Maximum Safe Operating Area June 10, 2013 IRFH4251DPbF Q2 - Synchronous FET Q1 - Control FET 1.8 ID = 30A VGS = 4.5V 1.4 RDS(on) , Drain-to-Source On Resistance (Normalized) RDS(on) , Drain-to-Source On Resistance (Normalized) 1.6 1.2 1.0 0.8 0.6 ID = 30A VGS = 4.5V 1.6 1.4 1.2 1.0 0.8 0.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 -60 -40 -20 0 T J , Junction Temperature (°C) T J , Junction Temperature (°C) Fig 13. Normalized On-Resistance vs. Temperature 1000 Fig 14. Normalized On-Resistance vs. Temperature 1000 ISD, Reverse Drain Current (A) ISD, Reverse Drain Current (A) 20 40 60 80 100 120 140 160 100 T J = 150°C 10 T J = 25°C T J = 150°C 100 T J = 25°C 10 VGS = 0V VGS = 0V 1.0 1.0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.2 0.4 VSD, Source-to-Drain Voltage (V) ID = 30A 8 6 T J = 125°C 2 T J = 25°C 0 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 17. Typical On-Resistance vs. Gate Voltage 6 www.irf.com 1.0 Fig 16. Typical Source-Drain Diode Forward Voltage RDS(on), Drain-to -Source On Resistance (m ) RDS(on), Drain-to -Source On Resistance (m ) 10 2 0.8 VSD, Source-to-Drain Voltage (V) Fig 15. Typical Source-Drain Diode Forward Voltage 4 0.6 © 2013 International Rectifier 2.0 ID = 30A 1.5 1.0 T J = 125°C 0.5 T J = 25°C 0.0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 18. Typical On-Resistance vs. Gate Voltage June 10, 2013 IRFH4251DPbF Q2 - Synchronous FET Q1 - Control FET 70 200 Limited By Package 60 Limited By Package 50 ID, Drain Current (A) ID, Drain Current (A) 160 40 30 20 120 80 40 10 0 25 50 75 100 125 0 150 25 T C , Case Temperature (°C) 125 150 2.5 VGS(th) , Gate threshold Voltage (V) 2.0 1.8 ID = 35µA 1.6 1.4 1.2 2.0 1.5 ID = 150µA 1.0 0.5 0.0 1.0 -75 -50 -25 0 25 50 -75 -50 -25 75 100 125 150 0 25 50 75 100 125 150 T J , Temperature ( °C ) T J , Temperature ( °C ) Fig 21. Threshold Voltage vs. Temperature Fig 22. Threshold Voltage vs. Temperature 250 6000 ID TOP 7.7A 12A BOTTOM 30A 200 EAS , Single Pulse Avalanche Energy (mJ) EAS , Single Pulse Avalanche Energy (mJ) 100 Fig 20. Maximum Drain Current vs. Case Temperature 2.2 150 100 50 0 ID TOP 11A 25A BOTTOM 60A 5000 4000 3000 2000 1000 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 23. Maximum Avalanche Energy vs. Drain Current 7 75 T C , Case Temperature (°C) Fig 19. Maximum Drain Current vs. Case Temperature VGS(th) , Gate threshold Voltage (V) 50 www.irf.com © 2013 International Rectifier 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 24. Maximum Avalanche Energy vs. Drain Current June 10, 2013 IRFH4251DPbF 100 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125°C and Tstart =25°C (Single Pulse) 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 125°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 25. Typical Avalanche Current vs. Pulse Width (Q1) 1000 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125°C and Tstart =25°C (Single Pulse) 100 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 125°C. 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 tav (sec) Fig 26. Typical Avalanche Current vs. Pulse Width (Q2) Thermal Response ( Z thJC ) °C/W 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 27. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Q1) 8 www.irf.com © 2013 International Rectifier June 10, 2013 IRFH4251DPbF Thermal Response ( Z thJC ) °C/W 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 0.0001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 28. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Q2) 9 www.irf.com © 2013 International Rectifier June 10, 2013 IRFH4251DPbF Fig 29. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V DRIVER L VDS D.U.T RG IAS 20V tp + V - DD A I AS 0.01 Fig 30a. Unclamped Inductive Test Circuit Fig 30b. Unclamped Inductive Waveforms Fig 31a. Switching Time Test Circuit Fig 31b. Switching Time Waveforms Id Vds Vgs VDD Vgs(th) Qgs1 Qgs2 Fig 32a. Gate Charge Test Circuit 10 www.irf.com © 2013 International Rectifier Qgd Qgodr Fig 32b. Gate Charge Waveform June 10, 2013 IRFH4251DPbF Dual PQFN 5x6 Outline “H” Package Details SEATING PLANE C D 4 A INDEX AREA (D/2xE/2) B D2 PIN#1 ID L1 A1 R0.30 E1 E2 e E 7x L2 8x b 8x K D1 1.15 0.48 SIDE VIEW 1.21 TOP VIEW 1.08 0.94 BOTTOM VIEW D im e n s io n T a b le Th Sy ic k n mb ess ol A A1 b D E e D1 E1 D2 E2 K L1 L2 V : V e r y T h in NOTE M IN IM U M N O M IN A L M A X IM U M 0 .9 0 1 .0 0 0 .8 0 0 .0 2 0 .0 5 0 .0 0 0 .5 0 0 .3 0 0 .4 0 6 .0 0 B S C 5 .0 0 B S C 1 .2 7 B S C 2 .4 2 2 .5 7 2 .6 7 4 .4 1 4 .5 6 4 .6 6 0 .9 3 1 .0 3 0 .7 8 4 .1 6 4 .2 6 4 .0 1 ----0 .2 0 1 .6 7 0 .4 0 1 .7 7 0 .5 0 6 1 .8 7 0 .6 0 For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2013 International Rectifier June 10, 2013 IRFH4251DPbF Dual PQFN 5x6 Outline Tape and Reel Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Qualification Information† Industrial (per JEDEC JESD47F †† guidelines ) Qualification level Moisture Sensitivity Level DUAL PQFN 5mm x 6mm Yes RoHS Compliant † †† MSL2 (per JEDEC J-STD-020D††) Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, Q1: L = 0.14mH, RG = 50, IAS = 30A; Q2: L = 0.72mH, RG = 50, IAS = 60A. Pulse width ≤ 400µs; duty cycle ≤ 2%. R is measured at TJ approximately 90°C. When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf Calculated continuous current based on maximum allowable junction temperature. Current is limited to Q1 = 45A & Q2 = 45A by source bonding technology. Pulsed drain current is limited by source bonding technology. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 12 www.irf.com © 2013 International Rectifier June 10, 2013 IRFH4251DPbF Revision History Date 13 Comments 06/10/2013 Updated the MSL level from MSL3 to MSL2, on pages 1 & 12. 05/28/2013 Updated the schematic drawing, on page 1. Updated the Features and Benefits table, on page 1. Updated Vsd for Q2 from 1.0V to 0.75V, on page 3. Added Tape and Reel drawing, on page 12. www.irf.com © 2013 International Rectifier June 10, 2013