FastIRFET™ IRFH4234PbF HEXFET® Power MOSFET VDSS 25 RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) V 4.6 m 7.3 Qg (typical) 8.2 nC ID (@TC (Bottom) = 25°C) 60 A PQFN 5X6 mm Applications Control MOSFET for Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Features Low Charge (typical 8.2 nC) Low RDSon (<4.6 m) Low Thermal Resistance to PCB (<4.6 °C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial Qualification Base part number Standard Pack Form Quantity Tape and Reel 4000 Package Type IRFH4234PbF Benefits Low Switching Losses Lower Conduction Losses Enable better Thermal Dissipation results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability PQFN 5mm x 6 mm Orderable Part Number IRFH4234TRPbF Absolute Maximum Ratings Parameter Max. Units VGS Gate-to-Source Voltage ± 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 22 A ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 60 ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V 38 IDM Pulsed Drain Current 240 PD @TA = 25°C Power Dissipation 3.5 PD @TC(Bottom) = 25°C Power Dissipation 27 Linear Derating Factor TJ Operating Junction and TSTG Storage Temperature Range W 0.028 W/°C -55 to + 150 °C Notes through are on page 8 1 www.irf.com © 2013 International Rectifier August 16, 2013 IRFH4234PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage BVDSS Breakdown Voltage Temp. Coefficient BVDSS/TJ RDS(on) Static Drain-to-Source On-Resistance VGS(th) VGS(th) IDSS IGSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage gfs Forward Transconductance Qg Total Gate Charge Total Gate Charge Qg Qgs1 Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Qgs2 Gate-to-Drain Charge Qgd Gate Charge Overdrive Qgodr Switch Charge (Qgs2 + Qgd) Qsw Output Charge Qoss RG Gate Resistance td(on) Turn-On Delay Time tr Rise Time Turn-Off Delay Time td(off) tf Fall Time Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Avalanche Characteristics Parameter Single Pulse Avalanche Energy EAS IAR Avalanche Current Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) Diode Forward Voltage VSD trr Reverse Recovery Time Qrr Reverse Recovery Charge Min. 25 ––– ––– ––– 1.1 ––– ––– ––– ––– 60 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 20 3.5 5.6 1.6 -5.6 ––– ––– ––– ––– 17 8.2 1.6 1.6 3.1 1.9 4.7 7.7 1.8 7.8 30 8.0 5.3 1011 286 83 Max. ––– ––– 4.6 7.3 2.1 ––– 1.0 100 -100 ––– ––– 12.3 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Units Conditions V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA m VGS = 10V, ID = 30A VGS = 4.5V, ID = 30A V VDS = VGS, ID = 25µA mV/°C µA VDS = 20V, VGS = 0V nA VGS = 20V VGS = -20V S VDS = 5.0V, ID = 30A nC VGS = 10V, VDS = 13V, ID = 30A nC nC ns pF Parameter RJC (Bottom) Junction-to-Case Junction-to-Case RJC (Top) VDS = 16V, VGS = 0V VDD = 13V, VGS = 4.5V ID = 30A RG=1.8 VGS = 0V VDS = 13V ƒ = 1.0MHz Typ. ––– ––– Max. 42 30 Min. ––– Typ. ––– Max. 60 ––– ––– 240 Units Conditions A MOSFET symbol showing the integral reverse p-n junction diode. V TJ = 25°C, IS = 30A, VGS = 0V ns TJ = 25°C, IF = 30A, VDD = 13V nC di/dt = 200A/µs D G S ––– ––– ––– ––– 10 11 1.0 15 17 Thermal Resistance VDS = 13V VGS = 4.5V ID = 30A Typ. ––– Max. 4.6 Units ––– 24 °C/W RJA Junction-to-Ambient ––– 36 RJA (<10s) Junction-to-Ambient ––– 24 2 www.irf.com © 2013 International Rectifier August 16, 2013 IRFH4234PbF 1000 1000 100 BOTTOM 10 1 2.75V 60µs PULSE WIDTH TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.25V 3.0V 2.75V 100 BOTTOM 10 2.75V 60µs PULSE WIDTH Tj = 150°C Tj = 25°C 1 0.1 0.1 1 10 0.1 100 1 1000 2.0 100 TJ = 150°C 10 TJ = 25°C V DS = 10V 60µs PULSE WIDTH RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 1.0 ID = 30A V GS = 10V 1.8 1.6 1.4 1.2 1.0 0.8 0.6 1.0 2.0 3.0 4.0 5.0 6.0 7.0 -60 -40 -20 0 V GS, Gate-to-Source Voltage (V) 100000 Fig 4. Normalized On-Resistance vs. Temperature 14.0 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd V GS, Gate-to-Source Voltage (V) ID= 30A Coss = Cds + Cgd 10000 Ciss Coss 1000 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics C, Capacitance (pF) 10 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Crss 100 12.0 V DS= 20V 10.0 V DS= 13V 8.0 V DS= 5.0V 6.0 4.0 2.0 0.0 10 1 10 100 V DS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 VGS 10V 5.0V 4.5V 4.0V 3.5V 3.25V 3.0V 2.75V www.irf.com © 2013 International Rectifier 0 2 4 6 8 10 12 14 16 18 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage August 16, 2013 IRFH4234PbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 100 TJ = 150°C 10 TJ = 25°C 1 100 100µsec 10 1msec 1 10msec 0.1 V GS = 0V 0.1 OPERATION IN THIS AREA LIMITED BY R DS(on) 0.01 0.4 0.6 0.8 1.0 1.2 0.1 1.4 1 10 100 VDS, Drain-to-Source Voltage (V) V SD, Source-to-Drain Voltage (V) Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 2.8 V GS(th) , Gate threshold Voltage (V) 60 50 ID, Drain Current (A) DC Tc = 25°C Tj = 150°C Single Pulse 40 30 20 10 2.4 2.0 1.6 1.2 ID = 25µA ID = 250µA ID = 1.0mA ID = 10mA 0.8 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 TJ , Temperature ( °C ) TC , Case Temperature (°C) Fig 10. Drain-to–Source Breakdown Voltage Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( Z thJC ) °C/W 10 D = 0.50 1 0.20 0.10 0.05 0.02 0.01 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com © 2013 International Rectifier August 16, 2013 IRFH4234PbF RDS(on), Drain-to -Source On Resistance (m ) 12.0 200 EAS , Single Pulse Avalanche Energy (mJ) ID = 30A 10.0 8.0 TJ = 125°C 6.0 4.0 TJ = 25°C 2.0 ID 6.8A 12A BOTTOM 30A TOP 160 120 80 40 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) V GS, Gate -to -Source Voltage (V) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12. On– Resistance vs. Gate Voltage Avalanche Current (A) 1000 100 Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125°C and Tstart =25°C (Single Pulse) 10 1 0.1 1.0E-06 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 125°C. 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 tav (sec) Fig 14. Typical Avalanche Current vs. Pulsewidth 5 www.irf.com © 2013 International Rectifier August 16, 2013 IRFH4234PbF Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A 0.01 I AS Fig 16b. Unclamped Inductive Waveforms Fig 16a. Unclamped Inductive Test Circuit Fig 17b. Switching Time Waveforms Fig 17a. Switching Time Test Circuit Id Vds Vgs VDD Vgs(th) Qgs1 Qgs2 Fig 18. Gate Charge Test Circuit 6 www.irf.com © 2013 International Rectifier Qgd Qgodr Fig 19. Gate Charge Waveform August 16, 2013 IRFH4234PbF PQFN 5x6 Outline "B" Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "B" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 www.irf.com © 2013 International Rectifier August 16, 2013 IRFH4234PbF PQFN 5x6 Outline "B" Tape and Reel Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Qualification Information† Industrial† (per JEDEC JESD47F†† guidelines) Qualification Level Moisture Sensitivity Level PQFN 5mm x 6mm MSL1 (per JEDEC J-STD-020D††) Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.093mH, RG = 50, IAS = 30A. Pulse width 400 µs; duty cycle 2%. R is measured at TJ of approximately 90°C. When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 8 www.irf.com © 2013 International Rectifier August 16, 2013 IRFH4234PbF Revision History Date 9 Comments 01/23/2013 Updated Rg typical from TBD to 1.8 . 05/15/2013 Remove note 6, on page 8. Remove reference to note 6 on maximum current rating, on page 1. Updated package 3D drawing, on page 1. Updated IS rating from 30 A to 60 A, on page 2. Updated package outline drawing, on page 7. 08/15/2013 Added “FastIRFET™” above the part number, on page 1. www.irf.com © 2013 International Rectifier August 16, 2013