FastIRFET™ IRFH4210PbF HEXFET® Power MOSFET VDSS 25 RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) V 1.10 m 1.35 Qg (typical) nC ID (@TC (Bottom) = 25°C) 245 A PQFN 5X6 mm Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Active ORing and Hot Swap Battery Operated DC Motor Inverters Features Low RDSon (<1.10m) Low Thermal Resistance to PCB (<1.2°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial Qualification Base part number Standard Pack Form Quantity Tape and Reel 4000 Package Type IRFH4210PbF Benefits Lower Conduction Losses Enable better thermal dissipation results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability PQFN 5mm x 6 mm Orderable Part Number IRFH4210TRPbF Absolute Maximum Ratings Parameter Max. Units VGS Gate-to-Source Voltage ± 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 45 ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 245 ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V 155 IDM Pulsed Drain Current 400 PD @TA = 25°C Power Dissipation 3.6 PD @TC(Bottom) = 25°C Power Dissipation 104 Linear Derating Factor TJ Operating Junction and TSTG Storage Temperature Range 0.029 -55 to + 150 A W W/°C °C Notes through are on page 8 1 www.irf.com © 2013 International Rectifier August 07, 2013 IRFH4210PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient BVDSS/TJ RDS(on) Static Drain-to-Source On-Resistance VGS(th) VGS(th) IDSS IGSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage gfs Forward Transconductance Total Gate Charge Qg Qg Total Gate Charge Pre-Vth Gate-to-Source Charge Qgs1 Qgs2 Post-Vth Gate-to-Source Charge Qgd Gate-to-Drain Charge Qgodr Gate Charge Overdrive Qsw Switch Charge (Qgs2 + Qgd) Qoss Output Charge RG Gate Resistance td(on) Turn-On Delay Time Rise Time tr td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Output Capacitance Coss Crss Reverse Transfer Capacitance Avalanche Characteristics Parameter EAS Single Pulse Avalanche Energy Avalanche Current IAR Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Diode Forward Voltage VSD Reverse Recovery Time trr Qrr Reverse Recovery Charge Thermal Resistance Min. 25 ––– ––– ––– 1.1 ––– ––– ––– ––– 251 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 21 0.85 1.10 1.6 -6.0 ––– ––– ––– ––– 74 36 9.4 4.6 13 9.0 17.6 34 1.2 20 44 24 15 4760 1310 370 Max. ––– ––– 1.10 1.35 2.1 ––– 1.0 100 -100 ––– ––– 54 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Units Conditions V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA m VGS = 10V, ID = 50A VGS = 4.5V, ID = 50A V VDS = VGS, ID = 100µA mV/°C µA VDS = 20V, VGS = 0V nA VGS = 20V VGS = -20V S VDS = 10V, ID = 50A nC VGS = 10V, VDS = 13V, ID = 50A nC nC ns pF Parameter VDS = 16V, VGS = 0V VDD = 13V, VGS = 4.5V ID = 50A RG=1.8 VGS = 0V VDS = 13V ƒ = 1.0MHz Typ. ––– ––– Max. 195 50 Min. ––– Typ. ––– Max. 245 ––– ––– 400 Units Conditions A MOSFET symbol showing the integral reverse p-n junction diode. V TJ = 25°C, IS = 50A, VGS = 0V ns TJ = 25°C, IF = 50A, VDD = 13V nC di/dt = 300A/µs D G S ––– ––– ––– ––– 26 51 1.0 39 77 RJC (Bottom) Junction-to-Case Junction-to-Case RJC (Top) VDS = 13V VGS = 4.5V ID = 50A Typ. ––– Max. 1.2 Units ––– 21 °C/W RJA Junction-to-Ambient ––– 35 RJA (<10s) Junction-to-Ambient ––– 21 2 www.irf.com © 2013 International Rectifier August 07, 2013 IRFH4210PbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 3.5V 3.1V 2.9V 2.7V 2.5V 100 10 1 2.5V BOTTOM 10 2.5V 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 25°C Tj = 150°C 1 0.1 0.1 1 10 0.1 100 1000 100 1.8 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 TJ = 150°C TJ = 25°C 10 VDS = 15V 60µs PULSE WIDTH 1.0 ID = 50A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -60 -40 -20 0 VGS, Gate-to-Source Voltage (V) 100000 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 14.0 VGS = 0V, f = 1 MHZ C iss = Cgs + C gd , Cds SHORTED C rss = Cgd VGS, Gate-to-Source Voltage (V) ID= 50A C oss = C ds + C gd C, Capacitance (pF) 1 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 10000 Ciss Coss 1000 Crss 100 12.0 10.0 VDS= 20V VDS= 13V 8.0 6.0 4.0 2.0 0.0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 VGS 10V 5.0V 4.5V 3.5V 3.1V 2.9V 2.7V 2.5V www.irf.com © 2013 International Rectifier 0 10 20 30 40 50 60 70 80 90 100 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage August 07, 2013 IRFH4210PbF 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 100 TJ = 150°C 10 TJ = 25°C 1 OPERATION IN THIS AREA LIMITED BY RDS(on) 1000 100µsec 100 10 Limited by Package 1msec 10msec 1 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1.0 0.1 1.2 1 10 100 VDS , Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 2.8 250 VGS(th), Gate threshold Voltage (V) Limited by package 200 150 100 50 2.4 2.0 1.6 1.2 ID = 100µA ID = 250µA ID = 1.0mA ID = 1A 0.8 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 TJ , Temperature ( °C ) TC , Case Temperature (°C) Fig 10. Threshold Voltage Vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature 10 Thermal Response ( ZthJC ) °C/W ID, Drain Current (A) DC 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 0.001 1E-006 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com © 2013 International Rectifier August 07, 2013 IRFH4210PbF 900 5.0 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m) ID = 50A 4.0 3.0 TJ = 125°C 2.0 1.0 TJ = 25°C ID 13A 25A BOTTOM 50A 800 TOP 700 600 500 400 300 200 100 0 0.0 2 4 6 8 10 12 14 16 18 25 20 50 75 100 125 150 Starting TJ , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 12. On– Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current Avalanche Current (A) 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125°C and Tstart =25°C (Single Pulse) 100 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 125°C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs. Pulsewidth 5 www.irf.com © 2013 International Rectifier August 07, 2013 IRFH4210PbF Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A 0.01 Fig 16a. Unclamped Inductive Test Circuit Fig 17a. Switching Time Test Circuit I AS Fig 16b. Unclamped Inductive Waveforms Fig 17b. Switching Time Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 18. Gate Charge Test Circuit 6 www.irf.com © 2013 International Rectifier Qgd Qgodr Fig 19. Gate Charge Waveform August 07, 2013 IRFH4210PbF PQFN 5x6 Outline "B" Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "B" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 www.irf.com © 2013 International Rectifier August 07, 2013 IRFH4210PbF PQFN 5x6 Outline "B" Tape and Reel Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Qualification Information† Industrial† (per JEDEC JESD47F†† guidelines) Qualification Level PQFN 5mm x 6mm Moisture Sensitivity Level MSL1 (per JEDEC J-STD-020D††) Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.156mH, RG = 50, IAS = 50A. Pulse width 400µs; duty cycle 2%. R is measured at TJ of approximately 90°C. When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test capability. Revision History Date 05/13/2013 08/07/13 Comments Updated package 3D drawing, on page 1. Updated current rating based on max rating not limited by package, on pages 1 and 2. Added "FastIRFET™" above part number on page1 IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 8 www.irf.com © 2013 International Rectifier August 07, 2013