Product specification DMN2075U NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.008 grams (approximate) Drain D Gate TOP VIEW Maximum Ratings S G Source Internal Schematic TOP VIEW @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Steady State TA = 25°C TA = 70°C Pulsed Drain Current (Note 4) Units V V IDM Value 20 ±8 4.2 3.4 27 Symbol PD RθJA TJ, TSTG Value 0.8 156 -55 to +150 Unit W °C/W °C ID A A Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Device mounted on FR-4 PCB, with minimum recommended pad layout. 3. Repetitive rating, pulse width limited by junction temperature. http://www.twtysemi.com [email protected] 1 of 2 Product specification DMN2075U NEW PRODUCT Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 20 - - 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) 0.4 - 1.0 V RDS (ON) - 25 30 38 45 mΩ |Yfs| VSD - 13 0.75 1.0 S V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 3.6A VGS = 2.5V, ID = 3.1A VDS = 5V, ID = 3.6A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 594.3 64.5 57.7 1.5 7.0 0.9 1.4 7.4 9.8 28.1 6.7 - pF pF pF Ω nC nC nC ns ns ns ns VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 10V, ID = 3.6A VDD = 10V, VGS = 4.5V, RL = 2.78Ω, RG = 1.0Ω 4. Short duration pulse test used to minimize self-heating effect. 5. Guaranteed by design. Not subject to production testing. http://www.twtysemi.com [email protected] 2 of 2