Product specification DMG3414U NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance • 25mΩ @ VGS = 4.5V • 29mΩ @ VGS = 2.5V • 37mΩ @ VGS = 1.8V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below • Weight: 0.008 grams (approximate) • • Drain D Gate TOP VIEW Maximum Ratings S G Source Internal Schematic TOP VIEW @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Steady State TA = 25°C TA = 70°C Pulsed Drain Current (Note 4) Units V V IDM Value 20 ±8 4.2 3.2 30 Symbol PD RθJA TJ, TSTG Value 0.78 162 -55 to +150 Unit W °C/W °C ID A A Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s. 3. Repetitive rating, pulse width limited by junction temperature. http://www.twtysemi.com [email protected] 1 of 2 Product specification DMG3414U NEW PRODUCT Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: @TA = 25°C unless otherwise specified TJ = 25°C Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) 0.5 ⎯ mΩ |Yfs| ⎯ 0.9 25 29 37 ⎯ V RDS (ON) ⎯ 19 22 28 7 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 8.2A VGS = 2.5V, ID = 3.3A VGS = 1.8V, ID = 2.0A VDS = 10V, ID = 4A Ciss Coss Crss Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 829.9 85.3 81.2 9.6 1.5 3.5 8.1 8.3 40.1 9.6 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF nC nC nC ns ns ns ns S Test Condition VDS = 10V, VGS = 0V f = 1.0MHz VGS = 4.5V, VDS = 10V, ID = 8.2A VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω, ID = 1A 4. Short duration pulse test used to minimize self-heating effect. http://www.twtysemi.com [email protected] 2 of 2