Product specification IRLML6244TRPbF VDS 20 V VGS Max ±12 V RDS(on) max 21.0 m 27.0 m (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) HEXFET® Power MOSFET * ' 6 Micro3TM (SOT-23) IRLML6244TRPbF Application(s) Load/ System Switch Features and Benefits Features Benefits Low RDS(on) ( < 21m) Industry-standard SOT-23 Package RoHS compliant containing no lead, no bromide and no halogen Lower conduction losses results in Multi-vendor compatibility Environmentally friendly Absolute Maximum Ratings Symbol VDS Parameter Max. Units 20 V ID @ TA = 25°C Drain-Source Voltage Continuous Drain Current, VGS @ 10V 6.3 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 5.1 IDM Pulsed Drain Current 32 PD @TA = 25°C Maximum Power Dissipation 1.3 PD @TA = 70°C Maximum Power Dissipation 0.80 A W Linear Derating Factor 0.01 VGS Gate-to-Source Voltage ± 12 W/°C V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Symbol Parameter e RJA Junction-to-Ambient RJA Junction-to-Ambient (t<10s) http://www.twtysemi.com f [email protected] Typ. Max. ––– 100 ––– 99 Units °C/W 1 of 2 Product specification IRLML6244TRPbF Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS Parameter Min. Typ. Max. Units Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage 20 ––– ––– ––– 7.8 ––– ––– 16.0 21.0 ––– 22.0 27.0 V Conditions VGS = 0V, ID = 250μA mV/°C Reference to 25°C, ID = 1mA m 0.5 0.9 1.1 ––– ––– 1.0 ––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 1.7 ––– gfs Qg Forward Transconductance 17 ––– ––– S Total Gate Charge ––– 8.9 ––– Qgs Gate-to-Source Charge ––– 0.68 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 4.4 ––– VGS = 4.5V td(on) Turn-On Delay Time ––– 4.9 ––– VDD =10V tr Rise Time ––– 7.5 ––– td(off) Turn-Off Delay Time ––– 19 ––– tf Fall Time ––– 12 ––– Ciss Input Capacitance ––– 700 ––– Coss Output Capacitance ––– 140 ––– Crss Reverse Transfer Capacitance ––– 98 ––– IDSS IGSS Drain-to-Source Leakage Current V VGS = 4.5V, ID = 6.3A VGS = 2.5V, ID = 5.1A μA nA d d VDS = VGS, ID = 10μA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 12V VGS = -12V VDS = 10V, ID = 6.3A ID = 6.3A nC ns VDS =10V d d ID = 1.0A RG = 6.8 VGS = 4.5V VGS = 0V pF VDS = 16V ƒ = 1.0MHz Source - Drain Ratings and Characteristics Symbol Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current c Min. Typ. Max. Units ––– ––– 1.3 A ––– 32 VSD (Body Diode) Diode Forward Voltage ––– ––– ––– 1.2 V trr Reverse Recovery Time ––– 12 18 ns Qrr Reverse Recovery Charge ––– 5.1 7.7 nC http://www.twtysemi.com [email protected] Conditions MOSFET symbol showing the integral reverse D G S p-n junction diode. TJ = 25°C, IS = 6.3A, VGS = 0V d TJ = 25°C, VR = 15V, IF=1.3A di/dt = 100A/μs d 2 of 2