Product specification AP2302AGN-HF ▼ Capable of 2.5V gate drive D ▼ Lower Gate Charge BVDSS 20V RDS(ON) 42mΩ ID ▼ Surface mount package 4.6A S ▼ RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. G S The SOT-23 package is widely used for all commercial-industrial applications. Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units 20 V +8 V 3 4.6 A 3 3.7 A 20 A 1.38 W Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient http://www.twtysemi.com [email protected] 3 Value Unit 90 ℃/W 4008-318-123 1 of 2 Product specification AP2302AGN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 20 - - V VGS=4.5V, ID=4A - - 42 mΩ VGS=2.5V, ID=3A - - 60 mΩ 0.3 - 1.2 V BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=5V, ID=4A - 14 - S IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+8V, VDS=0V - - +100 nA ID=4A - 6.5 10.5 nC 2 VGS=0V, ID=250uA Max. Units Qg Total Gate Charge Qgs Gate-Source Charge VDS=10V - 1 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 2.5 - nC VDS=10V - 9 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 12 - ns td(off) Turn-off Delay Time RG=3.3Ω - 16 - ns tf Fall Time VGS=5V - 5 - ns Ciss Input Capacitance VGS=0V - 300 480 pF Coss Output Capacitance VDS=20V - 85 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 80 - pF Rg Gate Resistance f=1.0MHz - 2 - Ω Min. Typ. IS=1.2A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter Test Conditions 2 Forward On Voltage 2 Max. Units trr Reverse Recovery Time IS=4A, VGS=0V, - 20 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC http://www.twtysemi.com [email protected] 4008-318-123 2 of 2