Product specification AP2302GN-HF ▼ Capable of 2.5V gate drive ▼ Small package outline D BVDSS 20V RDS(ON) 85mΩ ID ▼ Surface mount package ▼ RoHS Compliant 3.2A S SOT-23 Description G Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units 20 V +12 V 3 3.2 A 3 2.6 A 10 A Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 1.38 W Linear Derating Factor 0.01 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient http://www.twtysemi.com [email protected] 3 Value Unit 90 ℃/W 4008-318-123 1 of 2 Product specification AP2302GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 20 - - V - 0.1 - V/℃ VGS=4.5V, ID=3.6A - - 85 mΩ VGS=2.5V, ID=3.1A - - 115 mΩ 0.5 - 1.2 V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS=0V, ID=250uA Static Drain-Source On-Resistance 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=5V, ID=3.6A - 6 - S IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70 C) VDS=20V ,VGS=0V - - 10 uA Gate-Source Leakage VGS=+12V, VDS=0V - - +100 nA ID=3.6A - 4.4 - nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=10V - 0.6 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 1.9 - nC VDS=10V - 5.2 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=3.6A - 37 - ns td(off) Turn-off Delay Time RG=6Ω,VGS=5V - 15 - ns tf Fall Time RD=2.8Ω - 5.7 - ns Ciss Input Capacitance VGS=0V - 145 - pF Coss Output Capacitance VDS=10V - 100 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Rg Gate Resistance f=1.0MHz - 5.3 8 Ω Min. Typ. - - 1 A - - 10 A - - 1.2 V Source-Drain Diode Symbol IS ISM VSD Parameter Test Conditions VD=VG=0V , VS=1.2V Continuous Source Current ( Body Diode ) Pulsed Source Current ( Body Diode ) 2 Forward On Voltage http://www.twtysemi.com 1 IS=1.6A, VGS=0V [email protected] 4008-318-123 Max. Units 2 of 2