Product specification IRLML6344TRPbF HEXFET® Power MOSFET VDS 30 V VGS Max ± 12 V 29 mΩ 37 mΩ RDS(on) max (@VGS = 4.5V) G 1 3 D S RDS(on) max (@VGS = 2.5V) Micro3TM (SOT-23) IRLML6344TRPbF 2 Application(s) • Load/ System Switch Features and Benefits Benefits Low RDSon (<29mΩ) Lower Conduction Losses Industry-standard SOT-23 Package Multi-vendor compatibility RoHS compliant containing no lead, no bromide and no halogen results in Environmentally friendly MSL1, Consumer Qualification Increased Reliability Absolute Maximum Ratings Max. Units VDS Symbol Drain-Source Voltage Parameter 30 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 5.0 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 4.0 IDM Pulsed Drain Current 25 PD @TA = 25°C Maximum Power Dissipation 1.3 PD @TA = 70°C Maximum Power Dissipation 0.8 A W Linear Derating Factor 0.01 VGS Gate-to-Source Voltage ± 12 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C W/°C Thermal Resistance Symbol Parameter e RθJA Junction-to-Ambient RθJA Junction-to-Ambient (t<10s) http://www.twtysemi.com f [email protected] Typ. Max. ––– 100 ––– 99 Units °C/W 1 of 2 Product specification IRLML6344TRPbF Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS Parameter Min. Typ. Max. Units Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage 30 ––– ––– ––– 0.02 ––– ––– 22 29 ––– 27 37 V Conditions VGS = 0V, ID = 250μA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 2.5V, ID = 4.0A 0.5 0.8 1.1 ––– ––– 1.0 ––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 1.7 ––– Ω gfs Forward Transconductance 19 ––– ––– S Qg Total Gate Charge ––– 6.8 ––– Qgs Gate-to-Source Charge ––– 0.3 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 2.4 ––– VGS = 4.5V td(on) Turn-On Delay Time ––– 4.2 ––– VDD tr Rise Time ––– 5.6 ––– td(off) Turn-Off Delay Time ––– 22 ––– tf Fall Time ––– 9.1 ––– Ciss Input Capacitance ––– 650 ––– Coss Output Capacitance ––– 65 ––– Crss Reverse Transfer Capacitance ––– 46 ––– IDSS IGSS Drain-to-Source Leakage Current V VGS = 4.5V, ID = 5.0A μA nA d d VDS = VGS, ID = 10μA VDS =24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 12V VGS = -12V VDS = 10V, ID = 5.0A ID = 5.0A nC ns VDS =15V d =15Vd ID = 1.0A RG = 6.8Ω VGS = 4.5V VGS = 0V pF VDS = 25V ƒ = 1.0MHz Source - Drain Ratings and Characteristics Symbol IS Parameter Continuous Source Current (Body Diode) ISM Pulsed Source Current c (Body Diode) Min. Typ. Max. Units ––– ––– 1.3 A ––– ––– 25 ––– ––– 1.2 Conditions MOSFET symbol D showing the G integral reverse S p-n junction diode. Diode Forward Voltage trr Reverse Recovery Time ––– 10 15 ns TJ = 25°C, VR = 15V, IF=1.3A Qrr Reverse Recovery Charge ––– 3.8 5.7 nC di/dt = 100A/μs http://www.twtysemi.com [email protected] V TJ = 25°C, IS = 5.0A, VGS = 0V VSD d d 2 of 2