TYSEMI IRLML6344TRPBF

Product specification
IRLML6344TRPbF
HEXFET® Power MOSFET
VDS
30
V
VGS Max
± 12
V
29
mΩ
37
mΩ
RDS(on) max
(@VGS = 4.5V)
G 1
3 D
S
RDS(on) max
(@VGS = 2.5V)
Micro3TM (SOT-23)
IRLML6344TRPbF
2
Application(s)
• Load/ System Switch
Features and Benefits
Benefits
Low RDSon (<29mΩ)
Lower Conduction Losses
Industry-standard SOT-23 Package
Multi-vendor compatibility
RoHS compliant containing no lead, no bromide and no halogen
results in
Environmentally friendly
MSL1, Consumer Qualification
Increased Reliability
Absolute Maximum Ratings
Max.
Units
VDS
Symbol
Drain-Source Voltage
Parameter
30
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
5.0
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
4.0
IDM
Pulsed Drain Current
25
PD @TA = 25°C
Maximum Power Dissipation
1.3
PD @TA = 70°C
Maximum Power Dissipation
0.8
A
W
Linear Derating Factor
0.01
VGS
Gate-to-Source Voltage
± 12
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
W/°C
Thermal Resistance
Symbol
Parameter
e
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient (t<10s)
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f
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Typ.
Max.
–––
100
–––
99
Units
°C/W
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Product specification
IRLML6344TRPbF
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Min. Typ. Max. Units
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
30
–––
–––
–––
0.02
–––
–––
22
29
–––
27
37
V
Conditions
VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
mΩ
VGS = 2.5V, ID = 4.0A
0.5
0.8
1.1
–––
–––
1.0
–––
–––
150
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
RG
Internal Gate Resistance
–––
1.7
–––
Ω
gfs
Forward Transconductance
19
–––
–––
S
Qg
Total Gate Charge
–––
6.8
–––
Qgs
Gate-to-Source Charge
–––
0.3
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
2.4
–––
VGS = 4.5V
td(on)
Turn-On Delay Time
–––
4.2
–––
VDD
tr
Rise Time
–––
5.6
–––
td(off)
Turn-Off Delay Time
–––
22
–––
tf
Fall Time
–––
9.1
–––
Ciss
Input Capacitance
–––
650
–––
Coss
Output Capacitance
–––
65
–––
Crss
Reverse Transfer Capacitance
–––
46
–––
IDSS
IGSS
Drain-to-Source Leakage Current
V
VGS = 4.5V, ID = 5.0A
μA
nA
d
d
VDS = VGS, ID = 10μA
VDS =24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 12V
VGS = -12V
VDS = 10V, ID = 5.0A
ID = 5.0A
nC
ns
VDS =15V
d
=15Vd
ID = 1.0A
RG = 6.8Ω
VGS = 4.5V
VGS = 0V
pF
VDS = 25V
ƒ = 1.0MHz
Source - Drain Ratings and Characteristics
Symbol
IS
Parameter
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
c
(Body Diode)
Min. Typ. Max. Units
–––
–––
1.3
A
–––
–––
25
–––
–––
1.2
Conditions
MOSFET symbol
D
showing the
G
integral reverse
S
p-n junction diode.
Diode Forward Voltage
trr
Reverse Recovery Time
–––
10
15
ns
TJ = 25°C, VR = 15V, IF=1.3A
Qrr
Reverse Recovery Charge
–––
3.8
5.7
nC
di/dt = 100A/μs
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V
TJ = 25°C, IS = 5.0A, VGS = 0V
VSD
d
d
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