Transistors IC IC SMD Type Product specification KPCF8402 Features Low drain-source ON resistance : P Channel RDS (ON) = 60 m (typ.) N Channel RDS (ON) = 38 m (typ.) High forward transfer admittance : P Channel |Yfs| = 5.9 S (typ.) N Channel |Yfs| = 6.8 S (typ.) Low leakage current : P Channel IDSS = -10 N Channel IDSS = 10 A (VDS = -30 V) A (VDS = 30 V) Enhancement-mode : P Channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1mA) N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA) Absolute Maximum Ratings Ta = 25 Parameter Drain-source voltage Drain-gate voltage (RGS = 20 k ) Gate-source voltage Drain current Symbol P-Channel N-Channel Unit VDSS -30 30 V VDGR -30 30 V VGSS 20 V DC (Note 1) ID -3.2 4 A Pulse (Note 1) IDP -12.8 16 A PD (1) 1.35 1.35 PD (2) 1.12 1.12 PD (1) 0.53 0.53 PD (2) 0.33 0.33 Single-device operation Drain power dissipation (t = (Note 3a) 5 s) Single-device value at dual operation(Note 3b) Single-device operation Drain power dissipation (t = (Note 3a) 5 s) (Note 2b) Single-device value at dual operation(Note 3b) 20 W Single pulse avalanche energy(Note 4) EAS 0.67 2.6 mJ Avalanche current IAR -1.6 2 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.11 Channel temperature Tch 150 Storage temperature range Tstg -55 to 150 Rth (ch-a) (1) 92.6 Rth (ch-a) (2) 111.6 Rth (ch-a) (1) 235.8 Rth (ch-a) (2) 378.8 Single-device operation Thermal resistance,channel (Note 3a) to ambient (t = 5 s) (Note Single-device value at 2a) dual operation (Note 3b) Single-device operation Thermal resistance,channel (Note 3a) to ambient (t = 5 s) (Note Single-device value at 2b) dual operation (Note 3b) http://www.twtysemi.com mJ /W [email protected] 4008-318-123 1 of 3 IC Transistors IC SMD Type Product specification KPCF8402 Electrical Characteristics Ta = 25 Parameter Gate leakage current Drain cut-off current Drain-source breakdown voltage Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Testconditons Symbol IGSS IDSS 10 A VDS = ?30 V, VGS = 0 V P-Ch -10 A VDS = 30 V, VGS = 0 V N-Ch 10 A ID = -10 mA, VGS = 20 V V (BR) DSS ID =10 mA, VGS = 0 V V (BR) DSX ID = 10 mA, VGS = -20 V P-Ch N-Ch -30 V -15 V 30 V 15 V VDS = -10 V, ID = -1 mA P-Ch -0.8 -2.0 V VDS = 10 V, ID = 1 mA N-Ch 1.3 2.5 V VGS = -4.5 V, ID = -1.6A P-Ch VGS = 4.5 V, ID = 2.0A N-Ch VDS = -10 V, ID = -1.6 A P-Ch 2.9 VDS = 10 V, ID = 2.0 A N-Ch 3.4 80 105 60 72 58 77 38 50 6.8 S Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss 70 Input capacitance Ciss 470 Reverse transfer capacitance Crss Output capacitance Coss 80 Switching time Rise time tr 5.3 Switching time Turn-on time ton 600 VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 0 V, f = 1 MHz P-Ch N-Ch 60 60 8.4 Switching time Turn-off time toff 34 Switching time Rise time tr 5.2 Switching time Turn-on time ton 8.3 N-Ch tf 4.0 Switching time Turn-off time toff 22 Total gate charge (gate-source plus gate-drain) Qg 14 Qgd http://www.twtysemi.com pF ns tf Qgs1 pF 12 P-Ch Gate-drain (Gate-source charge "miller") charge m S |Yfs| Gate-source charge 1 m 5.9 Forward transfer admittance Switching time Fall time A N-Ch VGS = 10 V, ID = 2.0 A Switching time Fall time 10 P-Ch 16 V, VDS = 0 V ID = -10 mA, VGS = 0 V RDS (ON) Unit 16 V, VDS = 0 V VGS = -10 V, ID = -1.6 A Drain-source ON resistance Max VGS = V (BR) DSS RDS (ON) Typ VGS = V (BR) DSX Vth Min VDD=-24V,VGS=-10V,ID=-3.2A [email protected] P-Ch 1.4 ns nC 2.7 4008-318-123 2 of 3 Transistors IC IC SMD Type Product specification KPCF8402 Electrical Characteristics Ta = 25 Parameter Total gate charge (gate-source plus gate-drain) Min Qg Gate-source charge 1 Qgs1 Gate-drain ("miller") charge Qgd Drain reverse current Pulse (Note 1) IDRP Forward voltage (diode) Testconditons Symbol VDSF Typ Max Unit 10 VDD=24V,VGS=10V,ID=6A N-Ch nC 1.7 2.4 P-Ch IDR =-3.2 A, VGS = 0 V N-Ch IDR =4.0 A, VGS = 0 V -12.8 A 16 A 1.2 V -1.2 V Circuit Configuration http://www.twtysemi.com [email protected] 4008-318-123 3 of 3