IC
IC
SMD Type
Silicon P, N Channel MOS Type Transistor
KPCF8402
Features
Low drain-source ON resistance
: P Channel RDS (ON) = 60 m
(typ.)
N Channel RDS (ON) = 38 m
(typ.)
High forward transfer admittance
: P Channel |Yfs| = 5.9 S (typ.)
N Channel |Yfs| = 6.8 S (typ.)
Low leakage current
: P Channel IDSS = -10
N Channel IDSS = 10
A (VDS = -30 V)
A (VDS = 30 V)
Enhancement-mode
: P Channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1mA)
N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA)
Absolute Maximum Ratings Ta = 25
Parameter
Drain-source voltage
Drain-gate voltage (RGS = 20 k
)
Gate-source voltage
Drain current
Symbol
P-Channel
N-Channel
Unit
VDSS
-30
30
V
VDGR
-30
30
V
20
V
DC (Note 1)
ID
-3.2
4
A
Pulse (Note 1)
IDP
-12.8
16
A
PD (1)
1.35
1.35
PD (2)
1.12
1.12
PD (1)
0.53
0.53
PD (2)
0.33
0.33
VGSS
Single-device operation
Drain power dissipation (t = (Note 3a)
5 s)
Single-device value at
dual operation(Note 3b)
Single-device operation
Drain power dissipation (t = (Note 3a)
5 s) (Note 2b)
Single-device value at
dual operation(Note 3b)
20
W
Single pulse avalanche energy(Note 4)
EAS
0.67
2.6
mJ
Avalanche current
IAR
-1.6
2
A
Repetitive avalanche energy Single-device value at
dual operation (Note 2a, 3b, 5)
EAR
0.11
Channel temperature
Tch
150
Storage temperature range
Tstg
-55 to 150
Rth (ch-a) (1)
92.6
Rth (ch-a) (2)
111.6
Rth (ch-a) (1)
235.8
Rth (ch-a) (2)
378.8
Single-device operation
Thermal resistance,channel (Note 3a)
to ambient (t = 5 s) (Note
Single-device value at
2a)
dual operation (Note 3b)
Single-device operation
Thermal resistance,channel (Note 3a)
to ambient (t = 5 s) (Note
Single-device value at
2b)
dual operation (Note 3b)
mJ
/W
www.kexin.com.cn
1
IC
IC
SMD Type
KPCF8402
Electrical Characteristics Ta = 25
Parameter
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Testconditons
Symbol
IGSS
IDSS
10
A
VDS = ?30 V, VGS = 0 V
P-Ch
-10
A
VDS = 30 V, VGS = 0 V
N-Ch
10
A
ID = -10 mA, VGS = 20 V
V (BR) DSS
ID =10 mA, VGS = 0 V
V (BR) DSX
ID = 10 mA, VGS = -20 V
P-Ch
N-Ch
-30
V
-15
V
30
V
15
V
VDS = -10 V, ID = -1 mA
P-Ch
-0.8
-2.0
V
VDS = 10 V, ID = 1 mA
N-Ch
1.3
2.5
V
VGS = -4.5 V, ID = -1.6A
P-Ch
VGS = 4.5 V, ID = 2.0A
N-Ch
VDS = -10 V, ID = -1.6 A
P-Ch
2.9
VDS = 10 V, ID = 2.0 A
N-Ch
3.4
80
105
60
72
58
77
38
50
6.8
S
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
70
Input capacitance
Ciss
470
Reverse transfer capacitance
Crss
Output capacitance
Coss
80
Switching time Rise time
tr
5.3
Switching time Turn-on time
ton
600
VDS = -10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 0 V, f = 1 MHz
P-Ch
N-Ch
60
60
8.4
Switching time Turn-off time
toff
34
Switching time Rise time
tr
5.2
Switching time Turn-on time
ton
8.3
2
N-Ch
tf
4.0
Switching time Turn-off time
toff
22
Total gate charge (gate-source plus
gate-drain)
Qg
14
Qgd
www.kexin.com.cn
pF
ns
tf
Qgs1
pF
12
P-Ch
Gate-source charge 1
m
S
|Yfs|
Gate-drain (Gate-source charge
"miller") charge
m
5.9
Forward transfer admittance
Switching time Fall time
A
N-Ch
VGS = 10 V, ID = 2.0 A
Switching time Fall time
10
P-Ch
16 V, VDS = 0 V
ID = -10 mA, VGS = 0 V
RDS (ON)
Unit
16 V, VDS = 0 V
VGS = -10 V, ID = -1.6 A
Drain-source ON resistance
Max
VGS =
V (BR) DSS
RDS (ON)
Typ
VGS =
V (BR) DSX
Vth
Min
VDD=-24V,VGS=-10V,ID=-3.2A
P-Ch
1.4
2.7
ns
nC
IC
IC
SMD Type
KPCF8402
Electrical Characteristics Ta = 25
Parameter
Total gate charge (gate-source plus
gate-drain)
Symbol
Min
Qgs1
Gate-drain ("miller") charge
Qgd
Drain reverse current Pulse (Note 1)
IDRP
VDSF
Typ
Max
Unit
10
Qg
Gate-source charge 1
Forward voltage (diode)
Testconditons
VDD=24V,VGS=10V,ID=6A
N-Ch
nC
1.7
2.4
P-Ch
IDR =-3.2 A, VGS = 0 V
IDR =4.0 A, VGS = 0 V
N-Ch
-12.8
A
16
A
1.2
V
-1.2
V
Circuit Configuration
www.kexin.com.cn
3