TPCA8011-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8011-H High Efficiency DC／DC Converter Applications Notebook PC Applications Unit: mm High speed switching • Small gate charge: QSW =16 nC (typ.) 0.15±0.05 • High forward transfer admittance: |Yfs| =120 S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) 0.05 S S 1 0.6±0.1 Absolute Maximum Ratings (Ta = 25°C) Rating VDSS 20 V Drain-gate voltage (RGS = 20 kΩ) VDGR 20 V Gate-source voltage VGSS ±12 V (Note 1) ID 40 Pulsed (Note 1) IDP 120 PD 45 W PD 2.8 W PD 1.6 W EAS 208 mJ IAR 40 A EAR 2.0 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain power dissipation (Tc=25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) 4.25±0.2 A 5 0.8±0.1 1,2,3：SOURCE 5,6,7,8：DRAIN Unit 1.1±0.2 4 8 Drain-source voltage Drain current A 0.166±0.05 0.95±0.05 Enhancement mode: Vth = 0.6 to 1.3 V (VDS = 10 V, ID = 200 μA) Symbol 0.595 5.0±0.2 3.5±0.2 Low drain-source ON-resistance: RDS (ON) = 2.7 mΩ (typ.) DC 4 1 • 0.05 M A 5 5.0±0.2 • 6.0±0.3 Small footprint due to a small and thin package Characteristic 0.4±0.1 8 • • 1.27 0.5±0.1 Portable-Equipment Applications 4：GATE JEDEC ― JEITA ― 2-5Q1A TOSHIBA Weight: 0.069 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-16 TPCA8011-H Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc=25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-c) 2.78 °C/W Rth (ch-a) 44.6 °C/W Rth (ch-a) 78.1 °C/W Marking (Note 5) TPCA 8011-H Type Lot No. * Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 16 V, Tch = 25°C (initial), L = 0.1 mH, RG = 25 Ω, IAR = 40 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-16 TPCA8011-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cutoff current IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 20 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −12 V 8 ⎯ ⎯ Vth VDS = 10 V, ID = 200 μA 0.6 ⎯ 1.3 VGS = 2.5 V, ID = 20 A ⎯ 4.7 7.5 VGS = 4.5 V, ID = 20 A ⎯ 2.7 3.5 VDS = 10 V, ID = 20 A 60 120 ⎯ ⎯ 2900 ⎯ VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 430 ⎯ ⎯ 1300 ⎯ ⎯ 13 ⎯ ⎯ 24 ⎯ Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss tr Turn-on time ton 4.7 Ω Switching time Fall time tf Turn-off time Total gate charge (gate-source plus gate-drain) ID = 20A VOUT VGS 5 V 0V RL = 0.5Ω Rise time VDD ∼ − 10 V V V mΩ S pF ns ⎯ 22 ⎯ toff Duty < = 1%, tw = 10 µs ⎯ 61 ⎯ Qg VDD ∼ − 16 V, VGS = 5 V, ID = 40 A ⎯ 32 ⎯ ⎯ 7.7 ⎯ VDD ∼ − 16 V, VGS = 5 V, ID = 40 A ⎯ 11 ⎯ ⎯ 16 ⎯ Test Condition Min Typ. Max ⎯ ⎯ ⎯ 120 A ⎯ ⎯ −1.2 V Gate-source charge 1 Qgs1 Gate-drain (“Miller”) charge Qgd Gate switch charge QSW nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse Symbol (Note 1) IDRP VDSF IDR = 40 A, VGS = 0 V 3 Unit 2006-11-16 TPCA8011-H ID – VDS ID – VDS 10 3 2.5 2.3 Common source 8 Drain current ID (A) 2.2 6 40 100 3.5 Ta = 25°C Pulse test 5 2.1 4.5 30 4 2 1.9 20 10 0 0 0.4 0.6 0.8 Drain-source voltage VDS 2.6 2.5 80 2.2 60 5 2.1 40 4.5 2 4 1.9 3.5 0 0 1.0 (V) 1 2 Drain-source voltage VDS (V) Drain current ID (A) (V) Common source Pulse test 60 40 25 20 0 0 Ta = −55°C 1 3 2 Gate-source voltage VGS Ta = 25℃ 0.32 0.24 0.16 ID = 40 A 0.08 0 0 4 Pulse test (V) 20 10 2 4 Gate-source voltage ⎪Yfs⎪ – ID 6 8 VGS 10 (V) RDS (ON) – ID 100 Common source VDS = 10 V Pulse test Common source Ta = 25°C Drain-source ON-resistance RDS (ON) (mΩ) (S) 5 VDS – VGS VDS = 10 V 100 Forward transfer admittance |Yfs| 4 0.40 Common source 100 Ta = −55°C 100 25 10 1 0.1 0.1 3 Drain-source voltage VDS ID – VGS 1000 Ta = 25°C Pulse test VGS = 1.7 V 100 80 Common source 2.4 2.3 6 20 VGS = 1.7 V 0.2 3 10 Drain current ID (A) 50 1 10 Pulse test 10 VGS = 2.5 V 4.5 1 0.1 100 Drain current ID (A) 1 10 100 Drain current ID (A) 4 2006-11-16 TPCA8011-H RDS (ON) – Ta IDR – VDS 1000 Pulse test Ta = 25°C (A) Common source Common source Pulse test Drain reverse current IDR Drain-source ON-resistance RDS (ON) (mΩ) 12 8 ID = 40 A VGS = 2.5 V 10, 20 A 4 VGS = 4.5 V ID = 10, 20, 40 A 4.5 100 3 2.5 4 10 VGS = 0 V 1 0 −80 −40 0 40 80 Ambient temperature 120 Ta 1 0 160 (°C) −0.4 −0.2 −0.6 −0.8 Drain-source voltage VDS Capacitance – VDS −1.0 (V) Vth – Ta 2.5 10000 Gate threshold voltage Vth (V) Capacitance C (pF) Common source Ciss 1000 Coss Common source Crss VGS = 0 V f = 1 MHz Ta = 25°C 100 0.1 1 10 (V) ID = 0.2 mA Pulse test 1.5 1.0 0.5 0 −80 100 Drain-source voltage VDS VDS = 10 V 2.0 −40 0 40 Ambient temperature 80 Ta 120 160 (°C) Dynamic input/output characteristics 8 12 6 8 4 Common source ID = 40 A VGS 4 2 Ta = 25°C Gate-source voltage Drain-source voltage VDS (V) VDS 16 VGS (V) 10 20 Pulse test 0 0 10 20 30 Total gate charge Qg 40 0 50 (nC) 5 2006-11-16 TPCA8011-H rth – tw 1000 Transient thermal impedance rth (°C/W) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) (2) Device mounted on a glass-epoxy board (b) 100 (Note 2b) (1) (3) Tc = 25 °C 10 (3) 1 Single - Pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 100 PD – Ta PD – Tc 50 (1)Device mounted on a (W) glass-epoxy board(a) (Note 2a) (1) (2)Device mounted on a 2.5 glass-epoxy board(b) (Note 2b) Drain power dissipation PD Drain power dissipation PD (W) 3.0 t ＝10s 2.0 (2) 1.5 1.0 0.5 0 0 40 80 120 Ambient temperature 1000 tw (s) 40 30 20 10 0 160 Ta (°C) 0 40 80 Case temperature 120 Tc 160 (°C) Safe operating area 1000 Drain current ID (A) ID max (Pulse)* 100 t = 1 ms * 10 ms * ID max (Continuous) 10 DC operation Tc=25℃ * Single - pulse 1 Ta=25℃ Curves must be linearly with increase derated in temperature. 0.1 0.1 VDSS max 1 10 Drain-source voltage VDS 100 (V) 6 2006-11-16 TPCA8011-H 7 2006-11-16