TPCA8015-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8015-H High-Efficiency DC／DC Converter Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 0.05 M A 5 • Small footprint due to small and thin package • High-speed switching • Small gate charge: Qsw = 13 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 4.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 60 S (typ.) 5.0±0.2 6.0±0.3 8 Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) 5.0±0.2 0.6±0.1 Rating Unit Drain-source voltage VDSS 40 V Drain-gate voltage (RGS = 20 kΩ) VDGR 40 V Gate-source voltage VGSS ±20 V (Note 1) ID 35 Pulsed (Note 1) IDP 105 PD 45 W PD 2.8 W PD 1.6 W EAS 114 mJ IAR 35 A EAR 2.7 mJ Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) 0.05 S 1 Symbol Drain power dissipation (Tc = 25℃) A 0.166±0.05 S Maximum Ratings (Ta = 25°C) DC 0.595 A 4.25±0.2 8 5 1,2,3：SOURCE 5,6,7,8：DRAIN Tch 150 °C Storage temperature range Tstg −55 to 150 °C 0.8±0.1 4：GATE JEDEC ― JEITA ― TOSHIBA Channel temperature 1.1±0.2 4 3.5±0.2 • Drain current 4 1 0.95±0.05 • Characteristic 0.15±0.05 2-5Q1A Weight: 0.067 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: For Notes 1 to 5, refer to the next page. This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-01-17 TPCA8015-H Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc=25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-c) 2.78 °C/W Rth (ch-a) 44.6 °C/W Rth (ch-a) 78.1 °C/W Marking (Note 5) TPCA 8015-H Type ※ Lot No. Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.1 mH, RG = 25 Ω, IAR = 35 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-01-17 TPCA8015-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cutoff current IDSS VDS = 40 V, VGS = 0 V ⎯ ⎯ 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 40 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 25 ⎯ ⎯ VDS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 Drain-source breakdown voltage Gate threshold voltage Vth Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| VGS = 10 V, ID = 17.5 A ⎯ 4.4 5.4 VGS = 4.5 V, ID = 17.5 A ⎯ 6.1 7.9 VDS = 10 V, ID = 17.5 A 30 60 ⎯ Input capacitance Ciss ⎯ 2155 ⎯ Reverse transfer capacitance Crss ⎯ 200 ⎯ Output capacitance Coss ⎯ 780 ⎯ ⎯ 1.4 ⎯ ⎯ 5 ⎯ ⎯ 12 ⎯ ⎯ 10 ⎯ Duty < = 1%, tw = 10 µs ⎯ 48 ⎯ VDD ∼ − 32 V, VGS = 10 V, ID = 35 A ⎯ 37 ⎯ VDD ∼ − 32 V, VGS = 5 V, ID = 35 A ⎯ 21 ⎯ ⎯ 7 ⎯ ⎯ 9 ⎯ ⎯ 13 ⎯ Gate resistance VDS = 10 V, VGS = 0 V, f = 1 MHz Rg tr Turn-on time ton 4.7 Ω Switching time Fall time tf Turn-off time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge 1 ID = 17.5A VOUT VGS 10 V 0V RL =1.11Ω Rise time VDD ∼ − 20 V Qgs1 Gate-drain (“Miller”) charge Qgd Gate switch charge QSW VDD ∼ − 32 V, VGS = 10 V, ID = 35 A V V mΩ S pF Ω ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 105 A ⎯ ⎯ −1.2 V VDSF IDR = 35 A, VGS = 0 V 3 2006-01-17 TPCA8015-H ID – VDS ID – VDS 50 10 4 8 3.4 Common source Ta = 25°C Pulse test 30 3.2 20 3 10 0.2 0.4 0.6 0.8 Drain-source voltage VDS 80 3.5 3.4 60 3.2 40 3 VGS = 2.8V 0 0 1 1 (V) 2 Pulse test 60 40 Ta = −55°C 100 20 5 (V) VDS – VGS Drain-source voltage VDS (V) Drain current ID (A) 4 1 Common source VDS = 10 V 80 3 Drain-source voltage VDS ID – VGS 100 Ta = 25°C Pulse test 3.7 4.5 20 VGS = 2.8V 0 0 Common source 3.8 4 10 6 Drain current ID (A) Drain current ID (A) 3.5 4.5 6 40 3.6 100 25 Common source Ta = 25℃ Pulse test 0.8 0.6 0.4 ID = 35 A 0.2 18 9 0 0 1 2 4 3 Gate-source voltage 5 0 0 6 2 VGS (V) 4 Gate-source voltage Common source VDS = 10 V Pulse test 100 Ta = −55°C 25 100 10 1 0.1 0.1 1 8 10 VGS (V) RDS (ON) – ID 100 Drain-source ON-resistance RDS (ON) (mΩ) Forward transfer admittance |Yfs| (S) ⎪Yfs⎪ – ID 1000 6 10 Common source Ta = 25°C Pulse test 10 4.5 VGS = 10 V 1 0.1 100 Drain current ID (A) 1 10 100 Drain current ID (A) 4 2006-01-17 TPCA8015-H RDS (ON) – Ta IDR – VDS 1000 Common source Pulse test Common source 18A Pulse test 9A 8 6 VGS = 4.5 V ID = 9A,18A,35A 4 VGS = 10 V 2 0 −80 −40 0 40 80 Ambient temperature 120 Ta Ta = 25°C (A) ID = 35A 10 Drain reverse current IDR Drain-source ON-resistance RDS (ON) (mΩ) 12 4.5 3 1 VGS = 0 V 10 1 0.1 0 160 10 100 (°C) −0.2 −0.4 −0.6 −0.8 Drain-source voltage VDS Capacitance – VDS −1 (V) Vth – Ta 2.5 2 Gate threshold voltage Vth Capacitance C (pF) (V) 10000 Ciss 1000 Coss 100 Crss Common source VGS = 0 V f = 1 MHz Ta = 25°C 10 0.1 1 10 1 Common source 0.5 V = 10 V DS ID = 1 mA Pulse test 0 −80 −40 100 Drain-source voltage VDS 1.5 (V) 0 40 Ambient temperature 80 Ta 120 160 (°C) Dynamic input/output characteristics 16 ID = 35 A Ta = 25°C VDS 30 Pulse test VDD = 32 V 20 12 8 VGS 4 10 0 0 10 20 Total gate charge 30 Qg VGS (V) Drain-source voltage VDS (V) Common source Gate-source voltage 40 0 40 (nC) 5 2006-01-17 TPCA8015-H Transient thermal impedance rth (°C/W) rth – tw 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Tc=25℃ (2) 100 (1) 10 (3) 1 Single - pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 100 PD – Ta PD – Tc 50 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (1) 2.5 Drain power dissipation PD (W) Drain power dissipation PD (W) 3 (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10s 2 (2) 1.5 1 0.5 0 0 40 80 Ambient temperature 1000 tw (s) 120 Ta 40 30 20 10 0 160 (°C) 0 40 80 Case temperature 120 Tc 160 (°C) Safe operating area Drain current ID (A) 1000 100 ID max (Pulsed) * t =1ms * ID max (Continuous) 10ms * 10 DC Operation Tc = 25°C 1 * Single - pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 VDSS max 10 Drain-source voltage VDS 100 (V) 6 2006-01-17 TPCA8015-H 7 2006-01-17