TK45P03M1 MOSFETs Silicon N-Channel MOS (U-MOS-H) 1. Applications • DC-DC Converters • Desktop Computers 2. Features (1) High-speed switching (2) Low gate charge: QSW = 8.0 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 6.5 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25 25 Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Symbol Rating Unit VDSS 30 V VDGR 30 VGSS ±20 Drain current (DC) (Note 1) ID 45 Drain current (pulsed) (Note 1) IDP 90 PD 39 W (Note 2) EAS 53 mJ Power dissipation Single-pulse avalanche energy (Tc = 25) A Avalanche current IAR 45 A Channel temperature Tch 150 Storage temperature Tstg -55 to 150 Note: 1/8 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. www.freescale.net.cn 5. Thermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance Rth(ch-c) 3.21 /W Channel-to-ambient thermal resistance Rth(ch-a) 125 Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 24 V, Tch = 25 (initial), L = 0.02 mH, RG = 1.2 Ω, IAR = 45 A Note: 2/8 This transistor is sensitive to electrostatic discharge and should be handled with care. www.freescale.net.cn 6. Electrical Characteristics unless otherwise specified) 6.1. Static Characteristics (Ta = 25 25 Characteristics Symbol Gate leakage current IGSS Drain cut-off current Drain-source breakdown voltage VGS = ±20 V, VDS = 0 V Min Typ. Max Unit ±0.1 µA IDSS VDS = 30 V, VGS = 0 V 10 V(BR)DSS ID = 10 mA, VGS = 0 V 30 V(BR)DSX ID = 10 mA, VGS = -20 V 15 Vth VDS = 10 V, ID = 0.2 mA 1.3 2.3 RDS(ON) VGS = 4.5 V, ID = 22.5 A 8.4 12 VGS = 10 V, ID = 22.5 A 6.5 9.7 Min Typ. Max Unit 1500 pF Gate threshold voltage Drain-source on-resistance Test Condition V mΩ unless otherwise specified) 6.2. Dynamic Characteristics (Ta = 25 25 Characteristics Symbol Input capacitance Ciss Test Condition VDS = 10 V, VGS = 0 V, f = 1 MHz Reverse transfer capacitance Crss 100 Output capacitance Coss 320 Gate resistance rg VDS = 10 V, VGS = 0 V, f = 5 MHz 1.9 2.9 Ω Switching time (rise time) tr See Figure 6.2.1. 4.2 ns Switching time (turn-on time) ton 11 tf 9.4 toff 32 Min Typ. Max Unit VDD ≈ 24 V, VGS = 10 V, ID = 45 A 25 nC VDD ≈ 24 V, VGS = 5 V, ID = 45 A 13 VDD ≈ 24 V, VGS = 10 V, ID = 45 A Switching time (fall time) Switching time (turn-off time) Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified) 25 Characteristics Symbol Total gate charge (gate-source plus gate-drain) Qg Test Condition Gate-source charge 1 Qgs1 6.0 Gate-drain charge Qgd 4.8 Gate switch charge QSW 8.0 unless otherwise specified) 25 6.4. Source-Drain Characteristics (Ta = 25 Characteristics Reverse drain current (pulsed) Diode forward voltage Symbol (Note 3) Test Condition Min Typ. Max Unit IDRP 90 A VDSF IDR = 45 A, VGS = 0 V -1.2 V Note 3: Ensure that the channel temperature does not exceed 150. 3/8 www.freescale.net.cn 7. Marking Fig. 7.1 Marking 4/8 www.freescale.net.cn 8. Characteristics Curves (Note) 5/8 Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS Fig. 8.5 RDS(ON) - ID Fig. 8.6 RDS(ON) - Ta 5 2011-07-22 www.freescale.net.cn Rev.2.0 Fig. 8.7 IDR - VDS Fig. 8.8 Capacitance - VDS Fig. 8.9 Vth - Ta Fig. 8.10 Dynamic Input/Output Characteristics Fig. 8.11 PD - Tc (Guaranteed Maximum) 6/8 www.freescale.net.cn Fig. 8.12 rth/Rth(ch-c) - tw (Guaranteed Maximum) Fig. 8.13 Safe Operating Area (Guaranteed Maximum) Fig. 8.14 EAS - Tch (Guaranteed Maximum) Fig. 8.15 Test Circuit/Waveform 7/8 www.freescale.net.cn Package Dimensions 8/8 Unit: mm www.freescale.net.cn