SHENZHENFREESCALE TK20P04M1

TK20P04M1
MOSFETs Silicon N-Channel MOS (U-MOS-H)
1. Applications
•
DC-DC Converters
•
Switching Voltage Regulators
2. Features
(1)
High-speed switching
(2)
Low gate charge: QSW = 3.7 nC (typ.)
(3)
Low drain-source on-resistance: RDS(ON) = 19 mΩ (typ.) (VGS = 10 V)
(4)
Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
(5)
Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (heatsink)
3: Source
DPAK
 unless otherwise specified)
4. Absolute Maximum Ratings (Note) (Ta = 25
25
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Rating
Unit
VDSS
40
V
VGSS
±20
(Note 1)
ID
20
(Note 1)
IDP
60
PD
27
W
EAS
10.4
mJ
IAR
20
A

(Tc = 25)
(Note 2)
A
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
1/8
Symbol
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
www.freescale.net.cn
5. Thermal Characteristics
Characteristics
Symbol
Max
Unit
Channel-to-case thermal resistance
Rth(ch-c)
4.62
/W
Channel-to-ambient thermal resistance
Rth(ch-a)
125
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 32 V, Tch = 25 (initial), L = 20 µH, RG = 1.2 Ω, IAR = 20 A
Note:
2/8
This transistor is sensitive to electrostatic discharge and should be handled with care.
www.freescale.net.cn
6. Electrical Characteristics
 unless otherwise specified)
6.1. Static Characteristics (Ta = 25
25
Characteristics
Symbol
Gate leakage current
IGSS
Drain cut-off current
Drain-source breakdown voltage
VGS = ±20 V, VDS = 0 V
Min
Typ.
Max
Unit


±0.1
µA
IDSS
VDS = 40 V, VGS = 0 V


10
V(BR)DSS
ID = 10 mA, VGS = 0 V
40


V(BR)DSX
ID = 10 mA, VGS = -20 V
25


Vth
VDS = 10 V, ID = 0.1 mA
1.3

2.3
VGS = 4.5 V, ID = 10 A

23
34
VGS = 10 V, ID = 10 A

19
29
Min
Typ.
Max
Unit

985

pF
Gate threshold voltage
Drain-source on-resistance
Test Condition
RDS(ON)
V
mΩ
 unless otherwise specified)
6.2. Dynamic Characteristics (Ta = 25
25
Characteristics
Symbol
Input capacitance
Ciss
Test Condition
VDS = 10 V, VGS = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss

37

Output capacitance
Coss

159

Gate resistance
rg
VDS = 10 V, VGS = 0 V, f = 5 MHz

3.4
5.1
Ω
Switching time (rise time)
tr
See Figure 6.2.1.

2.7

ns
Switching time (turn-on time)
ton

8.1

tf

5.1

toff

22

Min
Typ.
Max
Unit
VDD ≈ 32 V, VGS = 10 V, ID = 20 A

15

nC
VDD ≈ 32 V, VGS = 5 V, ID = 20 A

7.6

VDD ≈ 32 V, VGS = 10 V, ID = 20 A

4.1

Switching time (fall time)
Switching time (turn-off time)
Fig. 6.2.1 Switching Time Test Circuit
 unless otherwise specified)
6.3. Gate Charge Characteristics (Ta = 25
25
Characteristics
Symbol
Qg
Total gate charge (gate-source plus
gate-drain)
Qgs1
Gate-source charge 1
Test Condition
Gate-drain charge
Qgd

1.7

Gate switch charge
QSW

3.7

 unless otherwise specified)
25
6.4. Source-Drain Characteristics (Ta = 25
Characteristics
Reverse drain current (pulsed)
Diode forward voltage
Symbol
(Note 3)
Test Condition
Min
Typ.
Max
Unit
IDRP



60
A
VDSF
IDR = 20 A, VGS = 0 V


-1.2
V
Note 3: Ensure that the channel temperature does not exceed 150.
3/8
www.freescale.net.cn
7. Marking
Fig. 7.1 Marking
4/8
www.freescale.net.cn
8. Characteristics Curves (Note)
5/8
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 RDS(ON) - ID
Fig. 8.6 RDS(ON) - Ta
www.freescale.net.cn
Fig. 8.7 IDR - VDS
Fig. 8.8 Capacitance - VDS
Fig. 8.9 Vth - Ta
Fig. 8.10 Dynamic Input/Output Characteristics
Fig. 8.11 PD - Tc
(Guaranteed Maximum)
6/8
www.freescale.net.cn
Fig. 8.12 rth/Rth(ch-c) - tw
(Guaranteed Maximum)
Fig. 8.13 Safe Operating Area
(Guaranteed Maximum)
Fig. 8.14 EAS - Tch
(Guaranteed Maximum)
Fig. 8.15 Test Circuit/Waveform
Note:
7/8
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
www.freescale.net.cn
Package Dimensions
Unit: mm
Weight: 0.36 g (typ.)
8/8
www.freescale.net.cn