ON Semiconductor BUL147 SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS The BUL147 have an applications specific state–of–the–art die designed for use in electric fluorescent lamp ballasts to 180 Watts and in Switchmode Power supplies for all types of electronic equipment. These high–voltage/high–speed transistors offer the following: • Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain Fast Switching No Coil Required in Base Circuit for Turn–Off (No Current • • Tail) Parametric Distributions are Tight and Consistent Lot–to–Lot Two Package Choices: Standard TO–220 or Isolated TO–220 MAXIMUM RATINGS Rating Symbol BUL147 Unit VCEO 400 Vdc Collector–Emitter Breakdown Voltage VCES 700 Vdc Emitter–Base Voltage VEBO 9.0 Vdc Collector Current — Continuous — Peak(1) IC ICM 8.0 16 Adc Base Current — Continuous — Peak(1) IB IBM 4.0 8.0 Adc PD 125 1.0 Watts W/°C TJ, Tstg – 65 to 150 °C Collector–Emitter Sustaining Voltage Total Device Dissipation Derate above 25°C (TC = 25°C) Operating and Storage Temperature BUL147 CASE 221A–09 TO–220AB THERMAL CHARACTERISTICS Symbol BUL44 Unit Thermal Resistance — Junction to Case — Junction to Ambient RθJC RθJA 1.0 62.5 °C/W Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds TL 260 °C Rating Semiconductor Components Industries, LLC, 2001 May, 2001 – Rev. 4 1 Publication Order Number: BUL147/D BUL147 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS VCEO(sus) 400 — — Vdc Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) ICEO — — 100 µAdc Collector Cutoff Current (VCE = Rated VCES, VEB = 0) (TC = 125°C) Collector Cutoff Current (VCE = 500 V, VEB = 0) (TC = 125°C) ICES — — — — — — 100 500 100 µAdc Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) IEBO — — 100 µAdc ON CHARACTERISTICS Base–Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc) Base–Emitter Saturation Voltage (IC = 4.5 Adc, IB = 0.9 Adc) VBE(sat) Collector–Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc) VCE(sat) — — 0.82 0.92 1.1 1.25 — — — — 0.25 0.3 0.35 0.35 0.5 0.5 0.7 0.8 hFE 14 — 8.0 7.0 10 10 — 30 12 11 18 20 34 — — — — — — fT — 14 — MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob — 100 175 pF Input Capacitance (VEB = 8.0 V) Cib — 1750 2500 pF (TC = 125°C) (IC = 4.5 Adc, IB = 0.9 Adc) (TC = 125°C) DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) (TC = 125°C) DC Current Gain (IC = 4.5 Adc, VCE = 1.0 Vdc) (TC = 125°C) DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc) (TC = 25°C to 125°C) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) Vdc Vdc DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) Dynamic Saturation VoltVolt age: Determined 1.0 µs and 3 0 µs respectively after 3.0 rising IB1 reaches 90% of final IB1 (see Figure 18) (IC = 2.0 Adc IB1 = 200 mAdc VCC = 300 V) (IC = 5.0 Adc IB1 = 0.9 0 9 Adc VCC = 300 V) 1.0 µs (TC = 125°C) — — 3.0 5.5 — — 3.0 µs (TC = 125°C) — — 0.8 1.4 — — 3.3 8.5 — — 0.4 1.0 — — VCE(dsat) 1.0 µs (TC = 125°C) — — 3.0 µs (TC = 125°C) — — (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. http://onsemi.com 2 Volts BUL147 SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs) Turn–On Time (IC = 2.0 Adc, IB1 = 0.2 Adc IB2 = 1.0 Adc, VCC = 300 V) ton — — 200 190 350 — ns toff — — 1.0 1.6 2.5 — µs ton — — 85 100 150 — ns toff — — 1.5 2.0 2.5 — µs tfi — — 100 120 180 — ns tsi — — 1.3 1.9 2.5 — µs tc — — 210 230 350 — ns tfi — — 80 100 150 — ns tsi — — 1.6 2.1 3.2 — µs tc — — 170 200 300 — ns tfi 60 — — 150 180 — ns tsi 2.6 — — 4.3 3.8 — µs tc — — 200 330 350 — ns (TC = 125°C) Turn–Off Time (TC = 125°C) Turn–On Time (IC = 4.5 Adc, IB1 = 0.9 Adc IB1 = 2.25 Adc, VCC = 300 V) (TC = 125°C) Turn–Off Time (TC = 125°C) SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH) Fall Time (IC = 2.0 Adc, IB1 = 0.2 Adc IB2 = 1.0 Adc) (TC = 125°C) Storage Time (TC = 125°C) Crossover Time (TC = 125°C) Fall Time (IC = 4.5 Adc, IB1 = 0.9 Adc IB2 = 2.25 Adc) (TC = 125°C) Storage Time (TC = 125°C) Crossover Time (TC = 125°C) Fall Time (IC = 4.5 Adc, IB1 = 0.9 Adc IB2 = 0.9 Adc) (TC = 125°C) Storage Time (TC = 125°C) Crossover Time (TC = 125°C) http://onsemi.com 3 BUL147 TYPICAL STATIC CHARACTERISTICS 100 100 VCE = 1 V TJ = 25°C 10 TJ = -20°C 1 0.01 1 0.1 VCE = 5 V TJ = 125°C h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN TJ = 125°C TJ = 25°C TJ = -20°C 10 1 0.01 10 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 1. DC Current Gain @ 1 Volt Figure 2. DC Current Gain @ 5 Volts 2 10 1.5 1 IC = 1 A 3A 5A 8A V CE , VOLTAGE (VOLTS) V CE , VOLTAGE (VOLTS) TJ = 25°C 10 A 0.5 1 IC/IB = 10 0.1 IC/IB = 5 0 0.01 0.1 1 IB, BASE CURRENT (AMPS) 0.01 0.01 10 Figure 3. Collector Saturation Region Cib 1.1 TJ = 25°C f = 1 MHz 1000 1 C, CAPACITANCE (pF) V BE , VOLTAGE (VOLTS) 10 10000 1.2 0.9 0.8 TJ = 25°C 0.6 IC/IB = 5 IC/IB = 10 0.5 TJ = 125°C 0.4 0.01 0.1 1 IC COLLECTOR CURRENT (AMPS) Figure 4. Collector–Emitter Saturation Voltage 1.3 0.7 TJ = 25°C TJ = 125°C 0.1 1 Cob 100 10 1 10 1 10 IC, COLLECTOR CURRENT (AMPS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Base–Emitter Saturation Region Figure 6. Capacitance http://onsemi.com 4 100 BUL147 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 600 500 400 IC/IB = 5 IC/IB = 10 3000 I /I = 5 C B TJ = 125°C TJ = 25°C 300 200 2500 2000 1500 1000 100 0 1 3 2 4 5 1 4 5 6 7 Figure 8. Resistive Switching, toff IC/IB = 5 4000 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 1500 500 TJ = 25°C TJ = 125°C 2500 7 IC = 2 A 2000 1500 1000 0 8 IC = 4.5 A 3 Figure 9. Inductive Storage Time, tsi 4 5 6 7 8 9 10 11 hFE, FORCED GAIN 12 250 tc 200 t, TIME (ns) tfi 150 100 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 50 1 2 4 5 6 15 150 100 50 TJ = 25°C TJ = 125°C 3 14 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH TJ = 25°C TJ = 125°C tc 200 13 Figure 10. Inductive Storage Time, tsi(hFE) 300 250 8 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 3000 500 IC/IB = 10 3 4 6 5 IC COLLECTOR CURRENT (AMPS) 2 TJ = 25°C TJ = 125°C 3500 1000 t, TIME (ns) 3 Figure 7. Resistive Switching, ton 2000 0 2 IC, COLLECTOR CURRENT (AMPS) 2500 1 0 8 IC, COLLECTOR CURRENT (AMPS) 3000 t, TIME (ns) 7 6 3500 0 IC/IB = 10 500 t si , STORAGE TIME (ns) 0 IB(off) = IC/2 VCC = 300 V PW = 20 µs TJ = 25°C TJ = 125°C 3500 t, TIME (ns) t, TIME (ns) 4000 IB(off) = IC/2 VCC = 300 V PW = 20 µs 0 7 tfi 1 2 3 4 5 6 7 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 11. Inductive Switching, tc and tfi IC/IB = 5 Figure 12. Inductive Switching, tc and tfi IC/IB = 10 http://onsemi.com 5 8 BUL147 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) t fi , FALL TIME (ns) 160 IC = 2 A 140 300 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH TJ = 25°C TJ = 125°C 120 100 80 60 IC = 4.5 A 3 4 5 6 7 8 9 10 11 12 13 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH IC = 2 A TC , CROSSOVER TIME (ns) 180 200 150 IC = 4.5 A 100 50 15 14 250 TJ = 25°C TJ = 125°C 3 4 5 6 7 8 9 10 11 12 13 14 hFE, FORCED GAIN hFE, FORCED GAIN Figure 13. Inductive Fall Time Figure 14. Inductive Crossover Time 15 GUARANTEED SAFE OPERATING AREA INFORMATION 9 DC (BUL147) 5 ms 10 µs 1 ms I C , COLLECTOR CURRENT (AMPS) I C , COLLECTOR CURRENT (AMPS) 100 1 µs 10 EXTENDED SOA 1 0.1 0.01 10 100 7 6 5 4 3 -5 V 2 1 0 1000 TC ≤ 125°C IC/IB ≥ 4 LC = 500 µH 8 VBE(off) = 0 V 0 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) POWER DERATING FACTOR 1.0 SECOND BREAKDOWN DERATING 0.6 0.4 THERMAL DERATING 0.2 0.0 20 40 60 80 100 120 200 300 400 -1, 5 V 500 600 700 800 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 15. Forward Bias Safe Operating Area 0.8 100 140 TC, CASE TEMPERATURE (°C) Figure 17. Forward Bias Power Derating Figure 16. Reverse Bias Switching Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown in Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figure 20 and NO TAG. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sus160 tained simultaneously during turn–off with the base–to–emitter junction reverse–biased. The safe level is specified as a reverse– biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. http://onsemi.com 6 BUL147 5 4 10 VCE dyn 1 µs 3 8 VOLTS 2 tsi 7 dyn 3 µs 1 6 5 0 -1 -4 90% IB1 1 3 µs 0 1 2 3 4 TIME 5 6 7 0 8 Figure 18. Dynamic Saturation Voltage Measurements 1 2 3 4 TIME 5 150 Ω 3W 8 VCE PEAK MTP8P10 MPF930 MUR105 MPF930 +10 V 7 IC PEAK 100 µF MTP8P10 100 Ω 3W 6 Figure 19. Inductive Switching Measurements +15 V 1 µF 10% IC 2 IB -5 0 tc 10% VCLAMP IB 3 1 µs -3 VCLAMP 4 90% IB -2 90% IC tfi IC 9 VCE RB1 IB1 Iout IB A 50 Ω MJE210 150 Ω 3W 500 µF IB2 RB2 V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 VOLTS IC(pk) = 100 mA MTP12N10 1 µF -Voff COMMON INDUCTIVE SWITCHING L = 200 µH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 RBSOA L = 500 µH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 Table 1. Inductive Load Switching Drive Circuit TYPICAL THERMAL RESPONSE r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 D = 0.5 0.2 0.1 0.1 P(pk) 0.05 0.02 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.1 1 t, TIME (ms) RθJC(t) = r(t) RθJC RθJC = 1.0°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RθJC(t) 10 Figure 20. Typical Thermal Response (ZθJC(t)) for BUL147 http://onsemi.com 7 100 1000 BUL147 PACKAGE DIMENSIONS TO–220AB CASE 221A–09 ISSUE AA –T– B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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