TYSEMI FMMT625

ransistors
SMD Type
Product specification
FMMT625
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
■ Features
0.4
3
1
0.55
● Power dissipation :PC=625mW
+0.1
1.3-0.1
+0.1
2.4-0.1
● Collector current:IC=1A
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
150
V
Collector-emitter voltage
VCEO
150
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1
A
Base current
IB
0.5
A
Power dissipation
PC
625
mW
Tj,Tstg
-55 to +150
℃
Operating and storage temperature range
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
ransistors
SMD Type
Product specification
FMMT625
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC=100μA
150
V
Collector-emitter breakdown voltage *
V(BR)CEO IC=10mA
150
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA
5
V
Collector cutoff current
ICBO
VCB=130V
100
nA
Emitter cut-off current
IEBO
VEB=4V
100
nA
Collector emitter cutoff current
ICES
VCES=130V
100
nA
IC=0.1A,IB=10mA
Collector-emitter saturation voltage *
26
50
mV
VCE(sat) IC=0.1A,IB=1mA
110
200
mV
IC=1A,IB=50mA
180
300
mV
Base-Emitter Saturation Voltage *
VBE(sat) IC=1A, IB=50mA*
0.85
1.0
V
Base-Emitter Turn-On Voltage *
VBE(on) IC=1A, VCE=10V*
0.74
1.0
V
DC current gain
hFE
IC=10mA, VCE=10V*
200
400
IC=200mA,VCE=10V
300
450
IC=1A, VCE=10V*
30
45
IC=3A, VCE=10V*
Output capacitance
Cob
Transition frequecy
fT
15
VCB=10V,f=1MHz
IC=50mA,VCE=10V,f=100MHz
6
100
135
10
pF
MHz
* Pulse test: tp ≤ 300 μs; d ≤ 0.02.
■ Marking
Marking
625
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2