RoHS MMBT8550LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 2W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 1. 0.95 0.95 2.9 1.9 2.4 1.3 ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage V CBO Emitter-Base Voltage V EB V CEO R T Ic o PD Collector Dissipation Ta=25 C* Tj Junction Temperature Storage Temperature C E L Electrical Characteristics Characteristic T stg Symbol IC N Symbol Collector Current 1.BASE 2.EMITTER 3.COLLECTOR O C 0.4 Complement to MMPT8050LT1 Collector-current:Ic=-500mA High Total Power Dissipation:Pc=225mW Characteristic D T ,. L O 3 Rating -40 V -25 V -6 V -500 mA 225 mW 150 O -55-150 O o MIN. TYP. MAX. Unit Condition -40 V I C =-100uA I E =0 Collector-Emitter Breakdown Voltage# BV CEO -25 V I C =-1mA I B =0 Emitter-Base Breakdown Voltage BV EBO -6 V I E =-100uA I C =0 Collector -Base Cutoff Current I CBO -100 nA V CB =-35V, I E =0 Emitter-Base Cutoff Current I EBO -100 nA V EB =-6V, I C =0 DC Current Gain h FE1 45 170 DC Current Gain h FE2 85 160 DC Current Gain h FE3 30 80 Collector-Emitter Saturation Voltage V CE(sat) W Base-Emitter Saturation Voltage Base-Emitter On Voltage V BE(sat) Output Capacitance C ob Current Gain-Bandwidth Product fT V CE =-1V, I C =-5mA V CE =-1V, I C =-50mA 300 V CE =-1V, I C =-500mA -0.28 -0.6 -0.98 -1.2 V BE(sat) -0.66 1 15 100 C C (Ta=25 C) BV CBO J E o (Ta=25 C) Unit Collector-Base Breakdown Voltage E Unit:mm V I C =-500mA, I B =-50mA V I C =-500mA, I B =-50mA V I CE =-1mA, I C =-10mA PF V CB =-10V, I E =0,f=1MHz MHz V CE =-10V, I C =-50mA 200 o *Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25 C # Pulse Test: Pulse Width 300uS Duty cycle 2% DEVICE MARKING: MMBT8550LT1=B6 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS MMBT8550LT1 Typical Characteristics 1000 I B =300 A I B =250 A -40 I B =200 A -30 I B =150 A -20 I B =100 A -10 I B =50 A -0 0 -10 -20 -30 -40 100 V CE (V),COLLECTOR-EMITTER VOLTAGE N C E L V BE (sat) -100 J E -10 -10 E V CE (sat) I C =10 I B -100 O F T (MHz),CURRENT GAIN-BANDWIDTH PRODUCT VBE(sat),VCE(sat)[mV],SATURATION VOLTAGE Static Characteristic R T C -100 -1000 I C (mA),COLLECTOR CURRENT DC Current Gain 100 Vc E =-6V 100 10 1 -1000 I C (mA),COLLECTOR CURRENT Bace-Emitter Saturation Voltage Collector-Emitter Saturation Voltage IC 10 -10 -50 -1000 D T ,. L O Vc E =-1V h FE ,DC CURRENT GAIN I C (mA),COLLECTOR CURRENT -50 -1 -10 -100 -1000 -10000 I C [mA],COLLECTOR CURRENT Current Gain Bandwidth Product W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]