RoHS MMBT9013LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 1W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 1. Complement to 9012 2.4 1.3 0.95 0.95 2.9 1.9 High Total Power Dissipation Pc=225mW ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage V CBO Emitter-Base Voltage V EBO V CEO R T Ic Collector Current o PD Collector Dissipation Ta=25 C* Tj Junction Temperature C E L Electrical Characteristics Parameter IC N Symbol Characteristic 1.BASE 2.EMITTER 3.COLLECTOR O T stg Symbol C 0.4 Collector Current :Ic=500mA Storage Temperature D T ,. L O 3 Rating 40 V 20 V 5 V 500 mA 225 mW 150 O -55~150 O o MIN. TYP. MAX. Unit Condition V I C =100 A I E =0 Collector-Emitter Breakdown Voltage# BV CEO 20 V I C =1mA I B =0 Emitter-Base Breakdown Voltage BV EBO 5 V I E =100 A I C =0 Collector -Base Cutoff Current I CBO 100 nA V CB =25V, V C =0 Emitter-Base Cutoff Current I EBO 100 nA V CB =3V, I C =0 DC Current Gain H FE1 64 DC Current Gain H FE2 30 Collector-Emitter Saturation Voltage V CE(sat) J E W Base-Emitter Saturation Voltage V BE(sat) Base-Emitter On Voltage V BE(on) 0.6 C C (Ta=25 C) 40 E o (Ta=25 C) Unit BV CBO Collector-Base Breakdown Voltage Unit:mm 120 300 V CE =1V, I C =50mA V CE =1V, I C =500mA 0.18 0.6 V I C =500mA, I B =50mA 0.95 1.2 I C =500mA, I B =50mA 0.67 0.7 V V V C e =1V, I C =10mA o *Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25 C _ 300uS Duty cycle < _ 2% # Pulse Test: Pulse Width < DEVICE MARKING: 9013=K6 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS MMBT9013LT1 Typical Characteristics 1000 I B =160 A 16 I B =120 A 14 I B =100 A 12 10 I B =80 A 8 I B =60 A 6 I B =40 A 4 I B =20 A 2 0 0 10 20 30 40 VBE(sat),VCE(sat)[mA],SATURATION VOLTAGE R T I C =10 I B C E L 1000 V BE (sat) 100 V CE (sat) 10 1 E 10 J E 100 IC 1000 10000 I C (mA),COLLECT CURRENT Base-Emitter Saturation Voltage Collector-Emitter Satruation Voltage O 10 100 1000 10000 I C (mA),COLLECTOR CURRENT N Static Characteristic C 10 1 1 V CE (V),COLLECTOR-EMMITTER VOLTAGE 10000 100 50 D T ,. L O Vc E =1V I B =140 A h FE ,DC CURRENT GAIN 18 fT(MHz),CURRENT GAIN-BANDWIDTH PRODUCT I C (mA),COLLECTOR CURRENT 20 DC Current Gain 1000 Vc E =6V 100 10 1 1 10 100 1000 10000 I C (mA),COLLECTOR CURRENT Current Gain Bandwidth Product W SHEN ZHEN YONG ER JIA ELECTRONIC CO.,LTD. Tel: 0755-8324 8022 Fax 0755-8324 9522 Http:// www.wej.cn