RoHS MBT6517LT1 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR * Collector Dissipation: Pc=225mW(Ta=25 ) D T ,. L * Collector-Emitter Voltage :Vceo=350V ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Collector-Base Voltage Vcbo 350 V Collector-Emitter Voltage Vceo 350 V Emitter-Base Voltage Vebo 6 V Collector Current Ic 500 mA Base Current Ib 250 mA Collector Dissipation Ta=25 * PD 225 mW Junction Temperature Tj 150 Storage Temperature Tstg Characteristic Symbol Min Collector-Base Breakdown Voltage BVcbo 350 Collector-Emitter Bvceo 350 R T Voltage# Emitter-Base Breakdown Voltage Collector Cutoff Current Icbo Emitter Cutoff Current C E L DC Current Gain DC Current Gain DC Current Gain DC Current Gain DC Current Gain BVebo E O Max Unit C O 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 IC N Typ Unit:mm Test Conditions V Ic=100uA Ie=0 V Ic= 1mA V Ie= 10uA Ic=0 50 nA Vcb= 250V Ie=0 50 nA Veb=5V Ic=0 6 Iebo Ib=0 Hfe1 20 Vce=10V Ic=1mA Hfe2 30 Vce=10V Ic=10mA Hfe3 30 200 Vce=10V Ic=30mA Hfe4 20 200 Vce=10V Ic=50mA Hfe5 15 Vce=10V Ic=100mA Collector-Emitter Saturation Voltage Vce(sat) 0.3 V Ic=10mA Ib=1mA Collector-Emitter Saturation Voltage Vce(sat) 0.5 V Ic=30mA Ib=3mA Base-Emitter Saturation Voltage Vbe(sat) 0.75 V Ic=10mA Ib=1mA Base-Emitter Saturation Voltage Vbe(sat) 0.9 V Ic=30mA Ib=3mA Base-Emitter On Voltage Vbe(on) 2 V Vce=10V Ic=100mA 200 MHz Vce=20V Ic=10mA J E Current Gain Bandwidth Product W 2.4 1.3 -55-150 ELECTRICAL CHARACTERISTICS at Ta=25 Breakdown 1. 2.9 1 .9 Symbol 0.95 Characteristic fT 40 F=20MHz Collect Base Capacitance Ccb 6 PF Vcb=20V Ie=0 f=1MHz Emitter Base Capacitance Ceb 80 PF Veb=0.5V f=1.00MHz * Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 . # Pulse Test : Pulse Width 300uS,Duty cycle 2% DEVICE MARKING: MMBT6517LT=1Z WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]