WINNERJOIN MBT6517LT1

RoHS
MBT6517LT1
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
* Collector Dissipation: Pc=225mW(Ta=25 )
D
T
,. L
* Collector-Emitter Voltage :Vceo=350V
ABSOLUTE MAXIMUM RATINGS at Ta=25
Rating
Collector-Base Voltage
Vcbo
350
V
Collector-Emitter Voltage
Vceo
350
V
Emitter-Base Voltage
Vebo
6
V
Collector Current
Ic
500
mA
Base Current
Ib
250
mA
Collector Dissipation Ta=25 *
PD
225
mW
Junction Temperature
Tj
150
Storage Temperature
Tstg
Characteristic
Symbol
Min
Collector-Base Breakdown Voltage
BVcbo
350
Collector-Emitter
Bvceo
350
R
T
Voltage#
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Icbo
Emitter Cutoff Current
C
E
L
DC Current Gain
DC Current Gain
DC Current Gain
DC Current Gain
DC Current Gain
BVebo
E
O
Max
Unit
C
O
1.BASE
2.EMITTER
3.COLLECTOR
0.4
0.95
IC
N
Typ
Unit:mm
Test Conditions
V
Ic=100uA Ie=0
V
Ic= 1mA
V
Ie= 10uA Ic=0
50
nA
Vcb= 250V Ie=0
50
nA
Veb=5V Ic=0
6
Iebo
Ib=0
Hfe1
20
Vce=10V Ic=1mA
Hfe2
30
Vce=10V Ic=10mA
Hfe3
30
200
Vce=10V Ic=30mA
Hfe4
20
200
Vce=10V Ic=50mA
Hfe5
15
Vce=10V Ic=100mA
Collector-Emitter Saturation Voltage
Vce(sat)
0.3
V
Ic=10mA Ib=1mA
Collector-Emitter Saturation Voltage
Vce(sat)
0.5
V
Ic=30mA Ib=3mA
Base-Emitter Saturation Voltage
Vbe(sat)
0.75
V
Ic=10mA Ib=1mA
Base-Emitter Saturation Voltage
Vbe(sat)
0.9
V
Ic=30mA Ib=3mA
Base-Emitter On Voltage
Vbe(on)
2
V
Vce=10V Ic=100mA
200
MHz
Vce=20V Ic=10mA
J
E
Current Gain Bandwidth Product
W
2.4
1.3
-55-150
ELECTRICAL CHARACTERISTICS at Ta=25
Breakdown
1.
2.9
1 .9
Symbol
0.95
Characteristic
fT
40
F=20MHz
Collect Base Capacitance
Ccb
6
PF
Vcb=20V Ie=0 f=1MHz
Emitter Base Capacitance
Ceb
80
PF
Veb=0.5V f=1.00MHz
*
Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 .
#
Pulse Test : Pulse Width
300uS,Duty cycle 2%
DEVICE MARKING: MMBT6517LT=1Z
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]