KEXIN KSC2881

Transistors
SMD Type
NPN Epitaxial Silicon Transistor
KSC2881
Features
Collector-Emitter Voltage : VCEO=120V
Current Gain Bandwidth Productor : fT=120MHz
Collector Dissipation : PC=1 to 2W in Mounted on Ceramic Board
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
120
V
Emitter-Base Voltage
VEBO
5
V
IC
800
mA
Collector Current
Base Current
Collector Power Dissipation
IB
160
mA
PC
500
mW
PC*
1,000
mW
Junction Temperature
TJ
150
Storage Temperature
TSTG
-55 to +150
* Mounted on Ceramic Board (250mm2X0.8mm)
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage
BVCEO
IC=10ìA, IB=0
120
V
Emitter-Base Breakdown Voltage
BVEBO
IE=1mA, IC=0
5
V
Collector Cut-off Current
ICBO
VCB=120V, IE=0
100
nA
Emitter Cut-off Current
IEBO
VBE=5V, IC=0
100
nA
DC Current Gain
hFE
VCE=5V, IC=100mA
Collector-Emitter Saturation Voltage
VCE (sat)
IC=500mA, IB=50mA
1.0
V
Base-Emitter On Voltage
VBE (on)
VCE=5V, IC=500mA
1.0
V
fT
VCE=5V, IC=100mA
Current Gain Bandwidth Product
Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
80
240
120
MHz
30
pF
hFE Classification
Marking
SCO
SCY
Rank
O
Y
Type
80 160
120 240
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