Transistors SMD Type NPN Epitaxial Silicon Transistor KSC2881 Features Collector-Emitter Voltage : VCEO=120V Current Gain Bandwidth Productor : fT=120MHz Collector Dissipation : PC=1 to 2W in Mounted on Ceramic Board Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 5 V IC 800 mA Collector Current Base Current Collector Power Dissipation IB 160 mA PC 500 mW PC* 1,000 mW Junction Temperature TJ 150 Storage Temperature TSTG -55 to +150 * Mounted on Ceramic Board (250mm2X0.8mm) Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-Emitter Breakdown Voltage BVCEO IC=10ìA, IB=0 120 V Emitter-Base Breakdown Voltage BVEBO IE=1mA, IC=0 5 V Collector Cut-off Current ICBO VCB=120V, IE=0 100 nA Emitter Cut-off Current IEBO VBE=5V, IC=0 100 nA DC Current Gain hFE VCE=5V, IC=100mA Collector-Emitter Saturation Voltage VCE (sat) IC=500mA, IB=50mA 1.0 V Base-Emitter On Voltage VBE (on) VCE=5V, IC=500mA 1.0 V fT VCE=5V, IC=100mA Current Gain Bandwidth Product Output Capacitance Cob VCB=10V, IE=0, f=1MHz 80 240 120 MHz 30 pF hFE Classification Marking SCO SCY Rank O Y Type 80 160 120 240 www.kexin.com.cn 1