NSR0240HT1G Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0240H in a SOD−323 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. http://onsemi.com Features • • • • • • • 40 VOLT SCHOTTKY BARRIER DIODE Very Low Forward Voltage Drop −480 mV @ 100 mA Low Reverse Current − 0.2 mA @ 25 V VR 250 mA of Continuous Forward Current Power Dissipation of 160 mW with Minimum Trace Very High Switching Speed Low Capacitance − CT = 4 pF This is a Pb−Free Device 1 CATHODE 2 ANODE Typical Applications • • • • • LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping & Protection 1 Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs and PDAs GPS AC = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 40 Vdc Forward Continuous Current (DC) IF 250 mA IFSM 1.0 A Non−Repetitive Peak Forward Surge Current ESD Rating: Human Body Model Machine Model AC MG G SOD−323 CASE 477 STYLE 1 Markets • • • • • MARKING DIAGRAM 2 ESD Class 1B Class A Device Package Shipping† NSR0240HT1G SOD−323* (Pb−Free) 3000/Tape & Reel *This package is inherently Pb−Free. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2008 September, 2008 − Rev. 0 1 Publication Order Number: NSR0240H/D NSR0240HT1G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C RqJA PD 740 160 °C/W mW Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C RqJA PD 460 270 °C/W mW TJ, Tstg −55 to +150 °C Junction and Storage Temperature Range 1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Reverse Leakage (VR = 10 V) (VR = 25 V) (VR = 40 V) IR Forward Voltage (IF = 10 mA) (IF = 100 mA) (IF = 200 mA) VF Total Capacitance (VR = 5.0 V, f = 1 MHz) CT Reverse Recovery Time (IF = IR = 10 mA, IR = 1.0 mA) trr Min Typ Max 0.2 0.6 0.55 2.0 10 345 480 585 450 550 710 4.0 3.0 DC Current − Source + 750 mH 50 W Output Pulse Generator 0.1 mF 0V IF tr tp 10% 90% VR Pulse Generator Output 0.1 mF IF DUT Adjust for IRM trr RL = 50 W IRM Current Transformer 50 W Input Oscilloscope 1. 2. 3. 4. 5. iR(REC) = 1 mA Output Pulse (IF = IRM = 10 mA; measured at iR(REC) = 1 mA) DC Current Source is adjusted for a Forward Current (IF) of 10 mA. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA. Pulse Generator transition time << trr. IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 Unit mA mV pF ns NSR0240HT1G 1000 Ir, REVERSE CURRENT (mA) 100 125°C 10 150°C 1 0.1 0.01 0.001 85°C 0 25°C 0.1 −40°C 0.3 0.2 0.4 0.5 150°C 100 125°C 1 25°C 0.1 0.01 0.001 0.0001 −40°C 0.00001 0.6 85°C 10 0 5 10 15 20 25 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Leakage Current 14 CT, TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 1000 12 TA = 25°C 10 8 6 4 2 0 0 5 10 15 20 25 30 35 VR, REVERSE VOLTAGE (V) Figure 4. Total Capacitance http://onsemi.com 3 40 45 30 35 NSR0240HT1G PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L NOTE 5 A1 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 STYLE 1: PIN 1. CATHODE 2. ANODE SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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