Inchange Semiconductor Product Specification 2SC3092 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·500V/7A switching regulator applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 7 V 7 A 14 A 3 A 90 W IC Collector current ICP Collector current-peak IB Base current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ PW≤300μs, Duty Cycle≤10% TC=25℃ Inchange Semiconductor Product Specification 2SC3092 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞ 500 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V VBE(sat) Base-emitter saturation voltage IC=3A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.6A ; VCE=5V 15 hFE-2 DC current gain IC=3A ; VCE=5V 8 COB Output capacitance IE=0 ; VCB=10V, f=1MHz 80 pF fT Transition frequency IC=0.6 A ; VCE=10V 18 MHz 50 Switching times ton Turn-on time ts Storage time tf Fall time IC=4A; IB1=0.8A;IB2=-1.6A VCC=200V ,RL=50Ω hFE-1 classifications L M N 15-30 20-40 30-50 2 0.5 μs 3.0 μs 0.3 μs Inchange Semiconductor Product Specification 2SC3092 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3