ON Semiconductort MPSW51 MPSW51A* One Watt High Current Transistors PNP Silicon w *ON Semiconductor Preferred Device These devices are available in Pb−free package(s). Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or contact your local ON Semiconductor sales office or representative. MAXIMUM RATINGS Rating Symbol Value Unit MPSW51 MPSW51A VCEO −30 −40 Vdc MPSW51 MPSW51A VCBO −40 −50 Vdc VEBO −5.0 Vdc Collector Current — Continuous IC −1000 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 Watts mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 Watts mW/°C TJ, Tstg −55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 125 °C/W Thermal Resistance, Junction to Case RqJC 50 °C/W Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Operating and Storage Junction Temperature Range 1 3 CASE 29−10, STYLE 1 TO−92 (TO−226AE) COLLECTOR 3 2 BASE THERMAL CHARACTERISTICS Characteristic 2 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max −30 −40 — — −40 −50 — — −5.0 — — — −0.1 −0.1 — −0.1 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage(1) (IC = −1.0 mAdc, IB = 0) MPSW51 MPSW51A Collector −Base Breakdown Voltage (IC = −100 mAdc, IE = 0) MPSW51 MPSW51A Emitter −Base Breakdown Voltage (IE = −100 mAdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO Collector Cutoff Current (VCB = −30 Vdc, IE = 0) (VCB = −40 Vdc, IE = 0) MPSW51 MPSW51A Emitter Cutoff Current (VEB = −3.0 Vdc, IC = 0) ICBO IEBO Vdc Vdc Vdc μAdc μAdc 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 3 1 Publication Order Number: MPSW51/D MPSW51 MPSW51A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 55 60 50 — — — Unit ON CHARACTERISTICS DC Current Gain (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) (IC = −1000 mAdc, VCE = −1.0 Vdc) hFE — Collector −Emitter Saturation Voltage (IC = −1000 mAdc, IB = −100 mAdc) VCE(sat) — −0.7 Vdc Base −Emitter On Voltage (IC = −1000 mAdc, VCE = −1.0 Vdc) VBE(on) — −1.2 Vdc fT 50 — MHz Cobo — 30 pF SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = −50 mAdc, VCE = −10 Vdc, f = 20 MHz) Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) −1.0 VCE , COLLECTOR VOLTAGE (VOLTS) 100 70 VCE = −1.0 V TJ = 25°C 50 20 −10 −20 −50 −100 −200 V, VOLTAGE (VOLTS) IC = IC = IC = IC = −100 −250 −500 mA −1000 mA mA mA −0.6 −0.4 −0.2 TJ = 25°C 0 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 Figure 2. Collector Saturation Region VBE(SAT) @ IC/IB = 10 VBE(ON) @ VCE = −1.0 V VCE(SAT) @ IC/IB = 10 0 −1.0 −2.0 IC = −50 mA Figure 1. DC Current Gain −0.4 −0.2 IC = −10 mA IB, BASE CURRENT (mA) TJ = 25°C −0.6 −1000 −0.8 IC, COLLECTOR CURRENT (mA) −1.0 −0.8 −500 −5.0 −10 −20 −50 −100 −200 qV B, TEMPERATURE COEFFICIENT (mV/ °C) h FE , CURRENT GAIN 200 −500 −1000 −0.8 −1.2 −1.6 qVB for VBE −2.0 −2.4 −2.8 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. “ON” Voltages Figure 4. Temperature Coefficient http://onsemi.com 2 −500 −1000 300 160 TJ = 25°C C, CAPACITANCE (pF) 200 VCE = −10 V TJ = 25°C f = 20 MHz 100 70 50 120 80 Cibo 40 Cobo 30 −10 −20 −50 −100 −200 −500 0 −1000 IC, COLLECTOR CURRENT (mA) Cobo Cibo −5.0 −1.0 Figure 5. Current Gain — Bandwidth Product −1.0 k I C , COLLECTOR CURRENT (mA) f T , CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) MPSW51 MPSW51A −500 Figure 6. Capacitance 1.0 ms 1.0 ms 100 ms TA = 25°C TC = 25°C −200 −100 −20 −10 −15 −2.0 −3.0 −4.0 VR, REVERSE VOLTAGE (VOLTS) DUTY CYCLE ≤ 10% MPSW51 MPSW51A −50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT −20 −10 −1.0 −2.0 −5.0 −10 −20 −30 −40 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. Active Region — Safe Operating Area http://onsemi.com 3 −25 −5.0 MPSW51 MPSW51A PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−10 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P F SEATING PLANE L K X X DIM A B C D F G H J K L N P R D G H J R 1 2 3 N C SECTION X−X N INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.135 −−− MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 3.43 −−− STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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