SMD Type Product specification ZVN3310F Product Summary Features and Benefits • • • • 100 10 VDS (V) RDS(ON) (Ω) Description and Applications This MOSFET utilises a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically higher pulse current handling capability in linear mode than a comparable trench technology structure. This MOSFET is suitable for general purpose applications. • • • • • High pulse current handling in linear mode Low input capacitance Fast switching speed Lead Free By Design/RoHS Compliant (Note 1) Mechanical Data • • • • General purpose 100V FET Power management Disconnect switches Telecoms Complementary Type – ZVP3310F Case: SOT-23 Case Material: UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) • • SOT-23 Drain D Gate G S Source TOP VIEW TOP VIEW Pin Out Configuration Equivalent Circuit Marking MF Reel size (inches) 7 Tape width (mm) 8 Ordering Information Product ZVN3310FTA Notes: Quantity per reel 3000 1. No purposefully added lead. Marking Information MF http://www.twtysemi.com [email protected] MF = Product Type Marking Code 4008-318-123 1 of 2 SMD Type Product specification ZVN3310F Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Symbol VDSS VGSS ID IDM Value 100 ±20 100 2 Units V V mA A Symbol PD TJ, TSTG Value 330 -55 to +150 Unit mW °C Thermal Characteristics Characteristic Power Dissipation @TA = 25°C Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Gate Threshold Voltage ON CHARACTERISTICS On-State Drain Current Static Drain-Source On-Resistance DYNAMIC CHARACTERISTICS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time http://www.twtysemi.com @TA = 25°C unless otherwise specified TJ = 25°C TJ = 125°C Symbol Min Typ Max Unit BVDSS 100 ⎯ V IDSS ⎯ ⎯ ⎯ 1 IGSS VGS(th) ⎯ 0.8 ID (ON) RDS (ON) gfs Ciss Coss Crss tD(on) tr tD(off) tf Test Condition ⎯ ⎯ 20 2.4 nA V ID = 1mA, VGS = 0V VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V VGS = ±20V, VDS = 0V VDS = VGS, ID = 1mA 500 ⎯ ⎯ ⎯ ⎯ 10 mA Ω VDS = 25V, VGS = 10V VGS = 10V, ID = 500mA 100 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 3 5 4 5 ⎯ 40 15 5 5 7 6 7 mS VDS = 25V, ID = 500mA pF VDS = 25V, VGS = 0V f = 1.0MHz ns VDD ≈ 25V, ID = 500mA [email protected] μA 50 4008-318-123 2 of 2