SMD Type Product specification FDV302P Digital FET, P-Channel General Description Features This P-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one P-channel FET can replace several digital transistors with different bias resistors such as the DTCx and DCDx series. -25 V, -0.12 A continuous, -0.5 A Peak. RDS(ON) = 13 Ω @ VGS= -2.7 V RDS(ON) = 10 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. Replace many PNP digital transistors (DTCx and DCDx) with one DMOS FET. SOT-23 SuperSOTTM-8 SuperSOTTM-6 SO-8 SOIC-16 SOT-223 Mark:302 D S G Absolute Maximum Ratings TA = 25oC unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current PD Maximum Power Dissipation TJ,TSTG Operating and Storage Temperature Range ESD Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) - Continuous - Pulsed FDV302P Units -25 V -8 V -0.12 A -0.5 0.35 W -55 to 150 °C 6.0 kV 357 °C/W THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient http://www.twtysemi.com [email protected] 4008-318-123 1of 2 SMD Type Product specification FDV302P Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min -25 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 o C IDSS Zero Gate Voltage Drain Current VDS = -20 V, VGS = 0 V IGSS Gate - Body Leakage Current VGS = -8 V, VDS= 0 V V TJ = 55°C ON CHARACTERISTICS mV / oC -20 -1 µA -10 µA -100 nA (Note) ∆VGS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 oC VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA RDS(ON) Static Drain-Source On-Resistance mV / oC 1.9 -0.65 -1 -1.5 V Ω VGS = -2.7 V, ID = -0.05 A 10.6 13 VGS = -4.5 V, ID = -0.2 A 7.9 10 12 18 TJ =125°C ID(ON) On-State Drain Current VGS = -2.7 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID= -0.2 A -0.05 A 0.135 S 11 pF 7 pF 1.4 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = -10 V, VGS = 0 V, f = 1.0 MHz (Note) VDD = -6 V, ID = -0.2 A, VGS = -4.5 V, RGEN = 50 Ω VDS = -5 V, ID = -0.2 A, VGS = -4.5 V 5 12 ns 8 16 ns 9 18 ns 5 10 ns 0.22 0.31 nC 0.11 nC 0.04 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.2 A (Note) -1 -0.2 A -1.5 V Note: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2