SMD Type Product specification FDN336P General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion. Low gate charge (3.6 nC typical). High performance trench technology for extremely low RDS(ON). High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. SuperSOTTM-8 SuperSOTTM-6 SOT-23 -1.3 A, -20 V. RDS(ON) = 0.20 Ω @ VGS = -4.5 V RDS(ON) = 0.27 Ω @ VGS= -2.5 V. SO-8 SOIC-16 SOT-223 D D 6 33 S TM SuperSOT -3 G S G Absolute Maximum Ratings TA = 25oC unless other wise noted Symbol Parameter FDN336P Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±8 V ID Drain Current - Continuous -1.3 A - Pulsed -10 PD TJ,TSTG Maximum Power Dissipation (Note 1a) 0.5 (Note 1b) 0.46 Operating and Storage Temperature Range W -55 to +150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 SMD Type Product specification FDN336P Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min -20 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 oC IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V V TJ = 55°C IGSSF Gate - Body Leakage, Forward IGSSR Gate - Body Leakage, Reverse ON CHARACTERISTICS mV /o C -16 -1 µA -10 µA VGS = 8 V, VDS = 0 V 100 nA VGS = -8 V, VDS = 0 V -100 nA (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA ∆VGS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 oC -0.4 RDS(ON) Static Drain-Source On-Resistance VGS = -4.5 V, ID = -1.3 A VGS = -2.5 V, I D = -1.1 A On-State Drain Current VGS = -4.5 V, VDS = -5 V gFS Forward Transconductance VDS = -4.5 V, ID = -2 A -1.5 V mV /oC 3 TJ =125°C ID(ON) -0.9 0.122 0.2 0.18 0.32 0.19 0.27 -5 Ω A 4 S 330 pF 80 pF 35 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = -10 V, VGS = 0 V, f = 1.0 MHz (Note 2) VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 6 Ω VDS = -10 V, ID = - 2 A, VGS = -4.5 V 7 15 ns 12 22 ns 16 26 ns 5 12 ns 3.6 5 nC 0.8 nC 0.7 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.42 A (Note) -0.7 -0.42 A -1.2 V Note: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 250oC/W when mounted on a 0.02 in2 pad of 2oz Cu. b. 270oC/W when mounted on a 0.001 in2 pad of 2oz Cu. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. http://www.twtysemi.com [email protected] 4008-318-123 2of 2