SMD Type Product specification FDN335N General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • Applications 1.7 A, 20 V. RDS(ON) = 0.07 Ω @ VGS = 4.5 V RDS(ON) = 0.100 Ω @ VGS = 2.5 V. • Low gate charge (3.5nC typical). • High performance trench technology for extremely low RDS(ON). • High power and current handling capability. • DC/DC converter • Load switch D D S G G TM SuperSOT -3 Absolute Maximum Ratings Symbol S TA = 25°C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage V ID Drain Current ±8 1.7 - Continuous (Note 1a) - Pulsed PD Power Dissipation for Single Operation TJ, Tstg A 8 (Note 1a) 0.5 (Note 1b) 0.46 Operating and Storage Junction Temperature Range W -55 to +150 °C °C/W °C/W Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient (Note 1a) 250 Thermal Resistance, Junction-to-Case (Note 1) 75 Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity 335 FDN335N 7’’ 8mm 3000 units http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 SMD Type Product specification FDN335N Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA,Referenced to 25°C IGSSF Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse IGSSR On Characteristics 20 VDS = 16 V, VGS = 0 V 1 VGS = 8 V, VDS = 0 V 100 µA nA VGS = -8 V, VDS = 0 V -100 nA 1.5 V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = 250 µA,Referenced to 25°C ∆TJ RDS(ON) V mV/°C 14 0.4 ID(on) On-State Drain Current VGS = 4.5 V, ID = 1.7 A VGS = 4.5 V, ID = 1.7 A,TJ = 125°C VGS = 2.5 V, ID = 1.5 A VGS = 4.5 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 1.5 A 0.9 mV/°C -3 0.055 0.079 0.078 0.070 0.120 0.100 8 Ω A 7 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) VDS = 10 V, VGS = 0 V, f = 1.0 MHz 310 pF 80 pF 40 pF (Note 2) VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 5 15 8.5 17 ns Turn-Off Delay Time 11 20 ns tf Turn-Off Fall Time 3 10 ns Qg Total Gate Charge 3.5 5 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 10 V, ID = 1.7 A, VGS = 4.5 V, ns 0.55 nC 0.95 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A (Note 2) 0.7 0.42 A 1.2 V Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. b) 270°C/W when mounted on a minimum pad. a) 250°C/W when mounted on a 0.02 in2 Pad of 2 oz. Cu. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% http://www.twtysemi.com [email protected] 4008-318-123 2 of 2