ROHM 1SR154

Data Sheet
Rectifier diode
1SR154-600
Applications
General purpose rectification
Dimensions (Unit : mm)
Land size figure (Unit : mm)
2.0
①
②
4.2
0.1±0.02
0.1
5.0±0.3
5
1.2±0.3
1
4.5±0.2
Features
1)Small power mold type. (PMDS)
2)High Reliability
2.0
2.6±0.2
PMDS
2.0±0.2
1.5±0.2
Construction
Silicon diffused junction
Structure
ROHM : PMDS
JEDEC : SOD-106
①
②
Manufacture Date
Taping dimensions (Unit : mm)
2.0±0.05
0.3
φ1.55±0.05
12±0.2
5.5±0.05
5.3±0.1
0.05
9.5±0.1
1.75±0.1
4.0±0.1
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
VRMS
Absolute peak reverse voltage
VR
Reverse voltage (repetitive peak)
Average rectified forward current
Io
Forward current surge peak (60Hz/1cyc)
IFSM
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Ta=25C)
Parameter
Symbol
VF
Forward voltage
Reverse current
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© 2011 ROHM Co., Ltd. All rights reserved.
IR
Limits
Unit
V
V
A
A
C
C
750
600
1
30
150
55 to 150
Min.
Typ.
Max.
-
-
1.1
V
-
-
10
uA
1/3
Unit
Conditions
IF=1A
VR=600V
2011.06 - Rev.A
100
100000
1
Ta=150℃
Ta=75℃
f=1MHz
Ta=25℃
Ta=150℃
Ta=25℃
0.01
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
0.1
Ta=125℃
10000
Ta=125℃
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:I F (A)
Data Sheet
1SR154-600
Ta=75℃
1000
100
Ta=25℃
10
10
Ta=25℃
0.001
1
1
0
200
400
600
800
1000
1200
0
100
FORWARD VOLTAGE : VF (mV)
VF-IF CHARACTERISTICS
200
300
400
500
0
600
15
20
25
30
50
300
940
930
920
AVE:926.8mV
910
Ta=25℃
VR=600V
n=30pcs
250
200
150
100
35
30
25
20
15
AVE:18.1pF
10
5
0
0
VF DISPERSION MAP
IR DISPERSION MAP
150
Ct DISPERSION MAP
1cyc
8.3ms
50
AVE:64.0A
100
2.4
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
2.3
2.2
2.1
PEAK SURGE
FORWARD CURRENT:I FSM(A)
Ifsm
REVERSE RECOVERY TIME:trr(us)
2.5
100
40
AVE:30.86nA
50
900
Ta=25℃
f=1MHz
VR=0V
n=10pcs
45
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=25℃
IF=1A
n=30pcs
REVERSE CURRENT:IR(nA)
FORWARD VOLTAGE : V F(mV)
10
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
950
PEAK SURGE
FORWARD CURRENT:I FSM(A)
5
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
2
1.9
1.8
AVE:1.869us
1.7
Ifsm
8.3ms
8.3ms
1cyc
50
1.6
0
0
1.5
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
IFSM DISRESION MAP
Mounted on epoxy board
Ifsm
t
50
0
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
100
IM=10mA
100
1ms
2
IF=0.5A
DC
Rth(j-a)
time
D=1/2
300us
Rth(j-c)
10
FORWARD POWER
DISSIPATION:Pf(W)
1000
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE
FORWARD CURRENT:I FSM(A)
100
Sin(θ＝180)
1
1
0.1
0.001
0
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
100
1000
0
1
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
2
2011.06 - Rev.A
Data Sheet
0.01
3
REVERSE POWER
DISSIPATION:PR (W)
DC
0.006
D=1/2
0.004
Sin(θ＝180)
0.002
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0V
0.008
2.5
T
D=t/T
VR=300V
Tj=150℃
DC
D=1/2
1.5
1
Sin(θ＝180)
0.5
0
VR
t
2
3
Io
0A
100
200
300
400
500
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
600
2.5
0A
Io
0V
VR
t
2
DC
T
D=t/T
VR=300V
Tj=150℃
1.5
D=1/2
1
Sin(θ＝180)
0.5
0
0
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
1SR154-600
0
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
150
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
30
25
20
15
10
AVE:10.6kV
AVE:3.70kV
5
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.06 - Rev.A
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Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A