Data Sheet Schottky Barrier Diode RB055L-40 Dimensions (Unit : mm) Applications General rectification Land size figure (Unit : mm) 2.0 3)High reliability ① ② 0.1±0.02 0.1 2.0±0.2 1.5±0.2 4.2 2 5.0±0.3 5 4.5±0.2 Features 1)Small power mold type.（PMDS） 2)Low IR 1.2±0.3 2.0 2.6±0.2 PMDS Construction Silicon epitaxial planar Structure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date Taping specifications (Unit : mm) 2.0±0.05 4.0±0.1 0.3 12±0.2 5.5±0.05 5.3±0.1 0.05 9.5±0.1 1.75±0.1 φ1.55±0.05 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forwarfd current Io IFSM Forward current surge peak （60Hz・1cyc） Junction temperature Tj Storage temperature Tstg Limits 40 40 3 40 150 40 to 150 Unit V V A A °C °C (*1) Mounted on epoxyboard. 180°Half sine wave Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Symbol VF Min. Typ. Max. Unit - - 0.65 V IF=3.0A IR - - 0.5 mA VR=40V 1/3 Conditions 2011.04 - Rev.A Data Sheet RB055L-40 Ta=150℃ Ta=125℃ 10000 1000 Ta=125℃ Ta=75℃ 100 Ta=-25℃ Ta=25℃ 10 1 0.1 1000 f=1MHz 1000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=150℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 10000 Ta=75℃ 100 Ta=25℃ 10 1 Ta=-25℃ 0.1 0.01 100 10 1 0.001 0 100 200 300 400 500 600 700 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 580 10 20 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 40 AVE:559.6mV 540 70 60 50 40 30 AVE:8.172uA AVE:6.62uA σ:1.9469uA 20 330 320 0 300 AVE:329.5pF Ct DISPERSION MAP 30 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 340 IR DISPERSION MAP 300 1cyc Ifsm 8.3ms 150 100 50 350 310 VF DISPERSION MAP 200 360 10 530 250 370 AVE:117.2A 1000 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 PEAK SURGE FORWARD CURRENT:IFSM(A) 550 380 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 560 80 Ta=25℃ f=1MHz VR=0V n=10pcs 390 Ta=25℃ VR=30V n=30pcs VR=40V n=30pcs 90 REVERSE CURRENT:IR(uA) FORWARD VOLTAGE:VF(mV) Ta=25℃ 570 15 AVE:8.20ns 10 5 0 0 30 400 100 Ta=25℃ IF=3A n=30pcs 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ifsm 8.3ms 8.3ms 1cyc 100 10 1 trr DISPERSION MAP IFSM DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 Io-Pf CHARACTERISTICS 5 1000 t 100 50 0 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Rth(j-a) 4 100 150 1 4.5 Mounted on epoxy board 100 Rth(j-c) 10 IM=100mA IF=1A 1 1ms FORWARD POWER DISSIPATION:Pf(W) Ifsm 200 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 250 time 3 D=1/2 DC 2.5 Sin(θ＝180) 2 1.5 1 0.5 300us 0.1 0.001 3.5 0 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 2/3 1000 0 0.5 1 1.5 2 2.5 3 3.5 4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 4.5 5 2011.04 - Rev.A Data Sheet RB055L-40 5 5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 4.5 REVERSE POWER DISSIPATION:PR (W) 0.4 0.3 DC 0.2 D=1/2 Sin(θ＝180) 0.1 4 t 3.5 DC 3 T 2.5 VR D=t/T VR=20V Tj=150℃ D=1/2 2 1.5 Sin(θ＝180) 1 0.5 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 40 4 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 DC D=1/2 3.5 Sin(θ＝180) 3 2.5 2 0A 0V 1.5 1 0.5 0 0 4.5 Io 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.5 Io t T VR D=t/T VR=20V Tj=150℃ 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 150 ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 No break at 30kV 25 20 AVE:12.8kV 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A