Data Sheet Schottky barrier diode RB160M-30 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3) High reliability 3.5±0.2 3.05 Features 1) Small power mold type. (PMDU) 2) Low IR. Construction Silicon epitaxial planer PMDU Structure 0.9±0.1 0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date Taping specifications (Unit : mm) 1.81±0.1 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz / 1cyc) Junction temperature Storage temperature φ1.0±0.1 Limits Symbol VRM VR Io IFSM Tj Tstg 3.71±0.1 8.0±0.2 φ1.55±0.05 4.0±0.1 0.25±0.05 1.75±0.1 2.0±0.05 3.5±0.05 4.0±0.1 1.5MAX Unit V V A A 30 30 1 30 125 40 to 125 C C (*1)Mounted on epoxy board. 180° Half sine wave Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Symbol VF1 VF2 IR1 Min. - Typ. 0.39 0.43 Max. 0.46 0.48 - 3.0 20 A IR2 - 9.0 50 A 1/3 Unit V V Conditions IF=0.5A IF=1.0A VR=15V VR=30V 2011.04 - Rev.C Data Sheet RB160M-30 Electrical characteristic curves 1 10000 Ta=75℃ 1000 Ta=125℃ Ta=25℃ 0.1 Ta=-25℃ 0.01 Ta=75℃ 100 1 Ta=-25℃ 0.1 100 10 0.01 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 600 5 10 15 20 25 1 30 0 AVE:424.2mV 410 80 70 60 50 40 30 AVE:8.172uA 20 400 370 360 350 AVE:324.4pF 340 330 320 10 310 0 300 VF DISPERSION MAP Ta=25℃ f=1MHz VR=0V n=10pcs 380 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 420 390 Ta=25℃ VR=30V n=30pcs 90 REVERSE CURRENT:IR(uA) 430 Ct DISPERSION MAP IR DISPERSION MAP 8.3ms 100 AVE:98.0A 50 100 20 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 15 10 AVE:11.7ns 5 PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc Ifsm REVERSE RECOVERY TIME:trr(ns) 150 0 0 50 Ifsm 8.3ms 8.3ms 1cyc 0 1 Ifsm t 100 50 0 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 IM=10mA Rth(j-a) 100 1ms time 300us 10 Rth(j-c) 1 D=1/2 0.8 DC 0.6 Sin(θ＝180) 0.4 0.2 0 0.1 0.001 100 1 IF=0.5A FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Mounted on epoxy board 1000 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP IFSM DISRESION MAP 150 30 400 100 Ta=25℃ IF=1A n=30pcs 440 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 450 FORWARD VOLTAGE:VF(mV) Ta=25℃ 10 0.001 PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) f=1MHz 1000 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 2/3 100 1000 0 0.5 1 1.5 2 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2011.04 - Rev.C 0.1 3 0.06 Sin(θ＝180) 0.04 D=1/2 DC 0.02 0 0A 0V 2.5 2 DC Io t T VR D=t/T VR=15V Tj=125℃ 1.5 D=1/2 1 0.5 Sin(θ＝180) 0 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 20 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 3 0.08 REVERSE POWER DISSIPATION:PR (W) Data Sheet RB160M-30 0A 0V 2.5 2 DC 1.5 Io t T VR D=t/T VR=15V Tj=125℃ D=1/2 1 Sin(θ＝180) 0.5 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 No break at 30kV 25 20 15 10 5 AVE:6.90kV 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A