Data Sheet Shottky barrier diode RB050L-40 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 5 ① ② 0.1±0.02 0.1 4.2 PMDS 2.0±0.2 1.5±0.2 Construction Silicon epitaxial planar 5.0±0.3 3 4.5±0.2 Features 1) Small power mold type. (PMDS) 2) Low IR 3) High reliability. 1.2±0.3 2.0 2.6±0.2 Structure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date Taping specifications(Unit : mm) 2.0±0.05 4.0±0.1 0.3 12±0.2 5.5±0.05 5.3±0.1 0.05 9.5±0.1 1.75±0.1 φ1.55±0.05 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings(Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward voltage Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature Limits Symbol VRM VR Io IFSM Tj Tstg Unit V V A A °C °C 40 40 3 70 125 40 to 125 (*1)Mounted on epoxy board. 180°Half sine wave Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Symbol VF1 Min. Typ. Max. Unit - - 0.55 V IF=3.0A VF2 - - 0.50 V IF=1.5A IR - - 1 mA VR=40V 1/3 Conditions 2011.04 - Rev.D Data Sheet RB050L-40 Electrical characteristic curves (Ta=25°C) Ta=25℃ Ta=-25℃ 0.1 Ta=125℃ 10000 1000 Ta=75℃ 100 Ta=25℃ 10 1 Ta=-25℃ 0.1 100 10 0.01 0.01 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 600 5 10 15 20 25 30 35 1 40 0 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 510 500 AVE:503.8mV 490 480 80 70 60 50 40 30 20 AVE:9.069uA 580 570 560 AVE:579.1pF 550 540 530 520 10 510 0 500 VF DISPERSION MAP IR DISPERSION MAP 200 Ct DISPERSION MAP 20 150 100 1cyc Ifsm 50 8.3ms 0 200 Ifsm Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 15 PEAK SURGE FORWARD CURRENT:IFSM(A) REVERSE RECOVERY TIME:trr(ns) AVE:157.0A 10 5 AVE:9.3ns 8.3ms 8.3ms 1cyc 150 100 50 0 0 1 trr DISPERSION MAP IFSM DISRESION MAP Ifsm t 200 150 100 50 0 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 5 1000 Mounted on epoxy board Rth(j-a) 100 Rth(j-c) 10 IM=100mA IF=1A 1 1ms 4 FORWARD POWER DISSIPATION:Pf(W) 250 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 300 30 Ta=25℃ f=1MHz VR=0V n=10pcs 590 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(uA) 520 Ta=25℃ VR=40V n=30pcs 90 Ta=25℃ IF=3A n=30pcs 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 600 100 530 PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 1 f=1MHz 100000 Ta=75℃ FORWARD VOLTAGE:VF(mV) 1000 1000000 10 D=1/2 DC 3 Sin(θ＝180) 2 1 time 300us 0.1 0.001 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 2/3 1000 0 1 2 3 4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 5 2011.04 - Rev.D Data Sheet RB050L-40 7 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 6 REVERSE POWER DISSIPATION:PR (W) 8 6 D=1/2 4 DC 2 t 5 T 4 DC VR D=t/T VR=20V Tj=125℃ D=1/2 3 2 1 Sin(θ＝180) Sin(θ＝180) 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 40 7 Io 0 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 10 6 0A 0V DC 5 t T D=1/2 4 Io VR D=t/T VR=20V Tj=125℃ 3 2 Sin(θ＝180) 1 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) No break at 30kV 25 20 15 AVE:17.6kV 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A